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arXiv:0812.1897 · Journal of Physics Condensed Matter

Tuning the exchange interaction by an electric field in laterally coupled quantum dots

A Kwaśniowski, Janusz Adamowski

Published May 7, 2009• 9 citations
arXivHTMLPDF

Abstract

The effect of an external electric field on the exchange interaction has been studied by an exact diagonalization method for two electrons in laterally coupled quantum dots (QDs). We have performed a systematic study of several nanodevices that contain two gate-defined QDs with different shapes and sizes located between source and drain contacts. The confinement potential is modeled by two potential wells with a variable range and softness. In all the considered nanodevices, the overall dependence of exchange energy J on electric field F is similar, i.e. for low fields J increases with increasing F, while for intermediate fields J reaches a maximum and then abruptly falls to zero if F exceeds a certain critical value. However, the J(F) dependence also shows certain characteristic properties that depend on the nanodevice geometry. We have found that the low- and intermediate-field behavior can be accurately parameterized by a linear function J(F) = αF+β, where α is independent of the nanodevice geometry and softness of the confinement potential. We have shown that the linear J(F) relation appears only if the tunnel coupling between the QDs is weak, i.e. the interdot separation is sufficiently large. This relation becomes nonlinear for the strong interdot coupling. For specific nanodevices we have found that the J(F) dependence exhibits a plateau in a broad electric-field regime. The properties of the exchange energy found in the present paper can be applied to all electrical manipulation of electron spin qubits.

DOI
10.1088/0953-8984/21/23/235601

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The effect of an external electric field on the exchange interaction has been studied by an exact diagonalization method for two electrons in laterally coupled quantum dots (QDs). We have performed a systematic study of several nanodevices that contain two gate-defined QDs with different shapes and sizes located between source and drain contacts. The confinement potential is modeled by two potential wells with a variable range and softness. In all the considered nanodevices, the overall dependence of exchange energy J on electric field F is similar, i.e. for low fields J increases with increasing F, while for intermediate fields J reaches a maximum and then abruptly falls to zero if F exceeds a certain critical value. However, the J(F) dependence also shows certain characteristic properties that depend on the nanodevice geometry. We have found that the low- and intermediate-field behavior can be accurately parameterized by a linear function J(F) = αF+β, where α is independent of the nanodevice geometry and softness of the confinement potential. We have shown that the linear J(F) relation appears only if the tunnel coupling between the QDs is weak, i.e. the interdot separation is sufficiently large. This relation becomes nonlinear for the strong interdot coupling. For specific nanodevices we have found that the J(F) dependence exhibits a plateau in a broad electric-field regime. The properties of the exchange energy found in the present paper can be applied to all electrical manipulation of electron spin qubits.
Exchange interaction has been studied for electrons in coupled quantum dots (QDs) by a configuration interaction method using confinement potentials with different profiles. The confinement potential has been parametrized by a two-centre power-exponential function, which allows us to investigate various types of QDs described by either soft or hard potentials of different ranges. For the soft (Gaussian) confinement potential the exchange energy decreases with increasing interdot distance due to the decreasing interdot tunnelling. For the hard (rectangular-like) confinement potential we have found a non-monotonic behaviour of the exchange interaction as a function of distance between the confinement potential centres. In this case, the exchange interaction energy exhibits a pronounced maximum for the confinement potential profile which corresponds to the nanostructure composed of the small inner QD with a deep potential well embedded in the large outer QD with a shallow potential well. This effect results from the strong localization of electrons in the inner QD, which leads to the large singlet–triplet splitting. Implications of this finding for quantum logic operations have been discussed.
We determine the spin-exchange coupling J between two electrons located in two vertically tunnel-coupled quantum dots, and its variation when magnetic (B) and electric (E) fields (both in-plane and perpendicular) are applied. We predict a strong decrease of J as the in-plane B field is increased, mainly due to orbital compression. Combined with the Zeeman splitting, this leads to a singlet-triplet crossing, which can be observed as a pronounced jump in the magnetization at in-plane fields of a few T, and perpendicular fields of the order of 10 T for typical self-assembled dots. We use harmonic potentials to model the confining of electrons, and calculate the exchange J using the Heitler-London and Hund-Mulliken techniques, including the long-range Coulomb interaction. With our results we provide experimental criteria for the distinction of singlet and triplet states, and therefore for microscopic spin measurements. In the case where dots of different sizes are coupled, we present a simple method to switch the spin coupling on and off with exponential sensitivity using an in-plane electric field. Switching the spin coupling is essential for quantum computation using electronic spins as qubits.
An all electrical manipulation with singlet and triplet states of an electron pair in a quadruple quantum dot (QD) has been studied by a configuration interaction method. We have investigated two nanodevices that consist of four weakly coupled lateral QDs, in which the electron localization can be changed by tuning the external voltages: the gate voltage in the first nanodevice and the source-drain voltage in the second. The electrons that---in the initial state---singly occupy the two identical input QDs are transferred to the two asymmetric output QDs by the sufficiently high electric field. We have shown that---for the QDs with suitably chosen parameters---the localization of the electrons in the output QDs depends on the spin states of the electron pair and the final spin state can be uniquely determined by a single-shot measurement of the electric charge gathered in only one of the output QDs. This leads to a possibility of performing the controlled operations on the electron-spin qubits in the quadruple QDs. We have found that the classical exclusive OR (XOR) logic gate can be performed with the electric field-induced transitions and the output read out by the spin-to-charge conversion.
Exchange energies and charge densities for few electrons in electrically tunable quantum dot (QD) systems are investigated by using the variational Monte Carlo (VMC) method in the presence of magnetic fields. For N = 2 electrons in double QD, the singlet Coulomb energy decreases in magnetic fields as a consequence of magnetic localization in both strongly and weakly coupled QDs. However, the triplet Coulomb energy reaches a maximum value at intermediate magnetic fields before decreasing. We observe good agreement between the results for VMC with s-p orbital trial wavefunction and exact diagonalization (ED) method in the exchange energies. For N = 2 electrons in triple quantum dot (TQD), we observe a discontinuity in the J-derivative with detuning voltage ( dJdVT ) in triangular TQDs at B = 0 T as crossing of the eigenenergy levels leads to abrupt spatial symmetry change of the triplet densities (density rotation) and relocalization. For B ≠ 0 T, the angular momentum provided to the electrons quenches this effect. The density rotation is absent in collinear TQD for all magnetic fields as the lowest excited state remains the px state and as such, no change in symmetry is possible. By varying the triangular TQD configuration, we show the discontinuity in ( dJdVT ) persists for top angle between 20° and 70°. For N = 3 electrons in symmetric triangular TQD, the monotonicity of the exchange curve from B = 0 to 4 T remains intact for decoupled QDs but not for coupled QDs. Finally, additional energy for the triangular TQD system is computed for up to N = 3 electrons.
Abstract Electron spins confined in semiconductor quantum dots (QDs) are one of potential candidates for physical implementation of scalable quantum information processing technologies. Tunnel coupling based inter exchange interaction between QDs is crucial in achieving single-qubit manipulation, two-qubit gate, quantum communication and quantum simulation. This review first provides a theoretical perspective that surveys a general framework, including the Helter−London approach, the Hund−Mulliken approach, and the Hubbard model, to describe the inter exchange interactions between semiconductor quantum dots. An electrical method to control the inter exchange interaction in a realistic device is proposed as well. Then the significant achievements of inter exchange interaction in manipulating single qubits, achieving two-qubit gates, performing quantum communication and quantum simulation are reviewed. The last part is a summary of this review.
Finding efficient methods for controlling entanglement is an important issue in quantum information processing. Here, we inspect theoretically possible ways for tuning orbital and spin entanglement of two interacting particles confined to a double quantum dot with spin-orbit coupling (SOC) which renders possible the coupling of spin to an external electric field. The entanglement in the spin part is sensitive to a transverse electric field. We show that through the field-induced SOC the entanglement of the spin subsystem can be slightly increased; the effect of a longitudinal electric field is more subtle: For a small interdot distance, a longitudinal electric field enhances substantially the entanglement of spins, while for a large interdot distance it has no impact. An external longitudinal electric field has a minor effect on the entanglement in the orbital part irrespective of the interdot distance. We trace back this observed phenomenon to a combined effect of the applied external electric field and the overlap of wave functions which is enhanced for decreasing interdot distances. As a result, at large interdot separation, the concurrence of the two-electron states turns insensitive to the applied electric field.