We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect and a simple model which quantitatively explains the results.
We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect and a simple model which quantitatively explains the results.
We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model.
Superconducting nanowire single-photon detectors (SNSPDs) exhibit complex switching behaviors due to electro thermal feedback during the detection process. Modeling and understanding these behaviors is integral for designing superconducting devices; however, many models often prioritize accuracy over computational speed and intuitive integration for circuit designers. Here, we build upon a growing architecture of SPICE tools for superconducting nanowire devices by capturing complex residual heating effects in a compact thermal model of an SNSPD. We demonstrate that our model is comparable to more complicated thermal models of superconducting nanowire devices, including finite-element simulations, and is applicable for the fast development of SNSPD circuits.
Superconducting nanowire single photon detectors (SNSPDs) have been realized using an innovative parallel wire configuration. This configuration allows, at the same time, a large detection area and a fast response, with the additional advantage of large signal amplitudes. The detectors have been thoroughly characterized in terms of signal properties (amplitude, risetime and falltime), detector operation (latching and not latching) and quantum efficiency (at 850 nm). It has been shown that the parallel SNSPD is able to provide significantly higher maximum count rates for large area SNSPDs than meandered SNSPDs. Through a proper parallel wire configuration the increase in maximum count rate can be obtained without latching problems.
We study the reset dynamics of niobium (Nb) superconducting nanowire single-photon detectors (SNSPDs) using experimental measurements and numerical simulations. The numerical simulations of the detection dynamics agree well with experimental measurements, using independently determined parameters in the simulations. We find that if the photon-induced hotspot cools too slowly, the device will latch into a dc resistive state. To avoid latching, the time for the hotspot to cool must be short compared to the inductive time constant that governs the resetting of the current in the device after hotspot formation. From simulations of the energy relaxation process, we find that the hotspot cooling time is determined primarily by the temperature-dependent electron-phonon inelastic time. Latching prevents reset and precludes subsequent photon detection. Fast resetting to the superconducting state is, therefore, essential, and we demonstrate experimentally how this is achieved. We compare our results to studies of reset and latching in niobium nitride SNSPDs.
Superconducting nanowire single-photon detectors are set apart from other photon counting technologies above all else by their extremely high speed, with few-ten-ps timing resolution, and recovery times τR ≲ 10 ns after a detection event. In this work, however, we identify in the conventional electrical readout scheme a nonlinear interaction between the detector and its readout which can make stable, high-efficiency operation impossible at count rates even an order-of-magnitude less than τR−1. We present detailed experimental confirmation of this, and a theoretical model which quantitatively explains our observations. Finally, we describe an improved readout which circumvents this problem, allowing these detectors to be operated stably at high count rates, with a detection efficiency penalty determined purely by their inductive reset time.
Superconducting nanowire single-photon detectors (SNSPDs), owing to their unique performance, are currently the standard detector in most demanding single-photon experiments. One important metric for any single-photon detector is the recovery time, which defines the minimum temporal separation between consecutive detection events. In SNSPDs, the recovery time is more subtle, as the detection efficiency does not abruptly drop to zero when the temporal separation between detection events gets smaller, instead, it increases gradually as the SNSPD current recovers. SNSPD's recovery time is dominated by its kinetic inductance, the readout impedance, and the degree of saturation of internal efficiency. Decreasing the kinetic inductance or increasing the readout impedance can accelerate the recovery process. Significant reduction of the SNSPD recovery time, by, for example, adding a series resistor in the readout circuitry, is possible but can lead to detector latching, which hinders further detector operation or enforces underbiasing and hence a reduction in detection efficiency. Previous research has demonstrated passive resistive networks for the reduction of recovery time that rely on trial and error to find the appropriate resistance values. Here, we show that, using a cryogenically compatible and tunable resistor technology, one can find the optimized impedance values, delivering fast SNSPD recovery time while maintaining maximum internal detection efficiency. Here, we show an increase of around twofold in both maximum achievable detection rates and the achievable detection efficiency at high photon fluxes, demonstrating detection rates close to 114 Mcps with no loss of internal detection efficiency.