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arXiv:0811.3261 · Physical Review B

Bunching visibility for correlated photons from single GaAs quantum dots

Takashi Kuroda, Thomas Belhadj, Marco Abbarchi, C. Mastrandrea, Massimo Gurioli, Takaaki Mano, Naoki Ikeda, Yoshimasa Sugimoto, K. Asakawa, Nobuyuki Koguchi, Kazuaki Sakoda, Bernhard Urbaszek, Th. Amand, X. Marie

Published Jan 30, 2009• 32 citations
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Abstract

We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton.

DOI
10.1103/physrevb.79.035330

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We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton.
We report photon correlation measurements that reveal unique signatures of biexciton and charged exciton emissions in a single self-assembled InAs quantum dot. Biexciton emission exhibits both bunching and antibunching under continuous-wave excitation and only antibunching under pulsed excitation. Cross correlation between biexciton and single-exciton emissions reveals highly asymmetric features due to cascaded emission. Under our excitation conditions, no polarization correlations between the exciton and biexciton emissions were observed.
We analyse the population dynamics and the photon emission statistics of a single semiconductor quantum dot with an exciton–biexciton–triexciton multilevel driven by a pulse field, in which the quantum regression theorem and optical Bloch equations are employed. The populations of the three states are comparable under resonant excitation with the input pulse area around 1.5π. Three second-order cross-correlation functions demonstrate the correlated three-photon emissions at a given order from triexciton, biexciton and exciton states driven by single pulses, while the probability of the bunched three-photon cascaded emissions decreases to the minimum as the input pulse area increases to 2π in every period.
We have studied photon correlation measurements on the photoluminescence (PL) of a self‐assembled single GaAs quantum dots (QD) under 8 K. The QD exhibited several peaks on the PL spectra arising from the recombination of multi‐excitonic complexes. Photon correlation measurements show several photon pairs emitted from the cascade of neutral and charged biexcitons. The photon pairs of the neutral biexcitons did not exhibit entanglement due to anisotropy of the QD, while we succeeded in observing the entanglement from the photon pairs from the charged biexcitons. This result can be understood by considering the energy structure of the charged states having Kramers doublets in the anisotropic QD.
We observe single-photon interferograms for emission of a single self-assembled GaAs quantum dot. A phase stabilizer is applied to the interferometer, enabling us to trace autocorrelations of weak emissions with a photon-counting level. At low excitation, where the average number of excitons in a dot is less than one, interferography reveals a single exponential decay, reflecting excitonic decoherence. At moderately high excitation, polarization interference between the exciton-biexciton transitions is found to appear on the interferogram. The decoherence time and the binding energy of biexcitons are determined simultaneously.
We have studied the photoluminescence correlation from a single InAs/GaAs self-assembled Stranski–Krastanow quantum dot under continuous, as well as under pulsed excitation. Under weak continuous excitation, where the single dot luminescence is due primarily to single exciton recombinations, antibunching is observed in the single dot emission correlation. Under weak pulsed excitation, the number of photons emitted by the quantum dot per pulse is close to one. We present data obtained under both conditions and are able to show that devices based on single quantum dots can be used to generate single photons.