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arXiv:0811.1230 · Physical Review Letters

Nonequilibrium Transport at a Dissipative Quantum Phase Transition

Chung‐Hou Chung, Karyn Le Hur, Matthias Vojta C, P. Wölfle

Published May 28, 2009• 36 citations
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Abstract

We investigate the nonequilibrium transport near a quantum phase transition in a generic and relatively simple model, the dissipative resonant level model, that has many applications for nanosystems. We formulate a rigorous mapping and apply a controlled frequency-dependent renormalization group approach to compute the nonequilibrium current in the presence of a finite bias voltage V and a finite temperature T. For V-->0, we find that the conductance has its well-known equilibrium form, while it displays a distinct nonequilibrium profile at finite voltage.

DOI
10.1103/physrevlett.102.216803

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We investigate the nonequilibrium transport near a quantum phase transition in a generic and relatively simple model, the dissipative resonant level model, that has many applications for nanosystems. We formulate a rigorous mapping and apply a controlled frequency-dependent renormalization group approach to compute the nonequilibrium current in the presence of a finite bias voltage V and a finite temperature T. For V-->0, we find that the conductance has its well-known equilibrium form, while it displays a distinct nonequilibrium profile at finite voltage.
The resonant-level model represents a paradigmatic quantum system which serves as a basis for many other quantum impurity models. We provide a comprehensive analysis of the nonequilibrium transport near a quantum phase transition in a spinless dissipative resonant-level model, extending earlier work [Phys. Rev. Lett 102, 216803 (2009)]. A detailed derivation of a rigorous mapping of our system onto an effective Kondo model is presented. A controlled energy-dependent renormalization-group approach is applied to compute the nonequilibrium current in the presence of a finite bias voltage VVV. In the linear-response regime $V\ensuremath{\rightarrow}0$, the system exhibits as a function of the dissipative strength a localized-delocalized quantum transition of the Kosterlitz-Thouless (KT) type. We address fundamental issues of the nonequilibrium transport near the quantum phase transition: Does the bias voltage play the same role as temperature to smear out the transition? What is the scaling of the nonequilibrium conductance near the transition? At finite temperatures, we show that the conductance follows the equilibrium scaling for V<TV<TV<T, while it obeys a distinct nonequilibrium profile for V>TV>TV>T. We furthermore provide different signatures of the transition in the finite-frequency current noise and ac conductance via a recently developed functional renormalization group (FRG) approach. The generalization of our analysis to nonequilibrium transport through a resonant level coupled to two chiral Luttinger liquid leads, generated by fractional quantum Hall edge states, is discussed. Our work on the dissipative resonant level has direct relevance to experiments on a quantum dot coupled to a resistive environment, such as H. Mebrahtu et al., [Nature (London) 488, 61 (2012)].
We calculate the finite-frequency current noise of a nonequilibrium resonance-level quantum dot close to a dissipative quantum phase transition of the Kosterlitz-Thouless (KT) type between a de-localized phase for weak dissipation and a localized phase for strong dissipation. The resonance-level is coupled to two spinless fermionic baths with a finite bias voltage and an Ohmic boson bath representing the dissipative environment. The system is equivalent to an effective anisotropic Kondo model out of equilibrium. To compute the finite-frequency noise, we combine two recently developed Functional Renormalization Group (FRG) approaches in Refs.[17,22] and in Ref.[23]. The nonequilibrium current noise at zero-temperature and finite frequencies shows a singular dip in the de-localized phase for the magnitude of frequencies equal to the bias voltage; while the dip is smeared out as the system moves to the localized phase. The corresponding peak-to-dip crossover is found in the AC conductance for the magnitude of frequencies equal to the bias voltage. The relevance and applications of our results for the experiments and for tunnelings between Fractional Quantum Hall Edge (FQHE) states and chiral Luttinger liquids are discussed.
The dynamical decoherence rate and charge susceptibility of a nonequilibrium quantum dot close to a dissipative quantum phase transition are calculated. The setup concerns a resonance-level quantum dot coupled to two spinless fermionic baths with a finite bias voltage and an ohmic bosonic bath representing a dissipative environment. The system is equivalent to an anisotropic Kondo model. As dissipation strength increases, the system at zero temperature and zero bias exhibits a quantum phase transition of the Kosterlitz-Thouless (KT) type between a conducting delocalized phase and an insulating localized phase. Within the nonequilibrium frequency-dependent renormalization group (RG) approach, the finite bias crossover in dynamical decoherence rate and charge susceptibility close to the transition are addressed. The dynamical decoherence rate is found to increase with increasing frequency. In the delocalized phase, it shows a singularity at frequencies equal to positive or negative bias voltage. As the system cross overs to the localized phase, the decoherence rate at low frequencies gets progressively smaller and the singular feature is gradually smeared out, leading to a single linear frequency dependence. The dynamical charge susceptibility at low frequencies shows a dip-to-peak crossover across the transition. Relevance of these results to the experiments is discussed.
We investigate bias-driven non-equilibrium quantum phase transitions in a paradigmatic quantum-transport setup: an interacting quantum dot coupled to non-interacting metallic leads. Using the Random Phase Approximation, which is exact in the limit of a large number of dot levels, we map out the zero-temperature non-equilibrium phase diagram as a function of interaction strength and applied bias. We focus our analysis on the behavior of the charge susceptibility and the current noise in the vicinity of the transition. Remarkably, despite the intrinsically non-equilibrium nature of the steady state, critical charge fluctuations admit an effective-temperature description, Teff(T,V)T_{\text{eff}}(T,V)Teff​(T,V), that collapses the steady-state behavior onto its equilibrium form. In sharp contrast, current fluctuations exhibit genuinely non-equilibrium features: the fluctuation-dissipation ratio becomes negative in the ordered phase, corresponding to a negative effective temperature for the current degrees of freedom. These results establish current noise as a sensitive probe of critical fluctuations at non-equilibrium quantum phase transitions and open new directions for exploring voltage-driven critical phenomena in quantum transport systems.
Based on the recent paper [Phys. Rev. Lett. 102, 216803 (2009)], we study the nonequilibrium occupation number nd{n}_{d}nd​ and charge susceptibility $\ensuremath{\chi}$ of a resonance level close to dissipative quantum phase transition of the Kosterlitz-Thouless (KT) type between a delocalized phase for weak dissipation and a localized phase for strong dissipation. The resonance level is coupled to two spinless fermionic baths with a finite bias voltage and an Ohmic bosonic bath representing the dissipative environment. The system is equivalent to an effective anisotropic Kondo model out of equilibrium. Within the nonequilibrium renormalization-group approach, we calculate nonequilibrium magnetization MMM and spin susceptibility $\ensuremath{\chi}$ in the effective Kondo model, corresponding to $2{n}_{d}\ensuremath{-}1$ and $\ensuremath{\chi}$ of a resonance level, respectively. We demonstrate the smearing of the KT transition in the nonequilibrium magnetization MMM as a function of the effective anisotropic Kondo couplings, in contrast to a perfect jump in MMM at the transition in equilibrium. In the limit of large bias voltages, we find MMM and $\ensuremath{\chi}$ at the KT transition and in the localized phase show deviations from the equilibrium Curie-law behavior. As the system gets deeper in the localized phase, both ${n}_{d}\ensuremath{-}1/2$ and $\ensuremath{\chi}$ decrease more rapidly to zero with increasing bias voltages.
We introduce a real time version of the functional renormalization group, which allows us to study correlation effects on nonequilibrium transport through quantum dots. Our method is equally capable to address (i) the relaxation out of a nonequilibrium initial state into a (potentially) steady state driven by a bias voltage and (ii) the dynamics governed by an explicitly time-dependent Hamiltonian. All time regimes from transient to asymptotic can be tackled; the only approximation is the consistent truncation of the flow equations at a given order. As an application we investigate the relaxation dynamics of the interacting resonant level model, which describes a fermionic quantum dot dominated by charge fluctuations. Moreover, we study incoherence and relaxation phenomena within the ohmic spin-boson model by mapping the latter to the interacting resonant level model.