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arXiv:0810.2642 · The European Physical Journal D

Quantum memory for photons in case of many close lying exciton resonances in solids

A. D. Gazazyan, E. A. Gazazyan, A. G. Margaryan

Published Apr 10, 2009• 6 citations
arXivHTMLPDF
DOI
10.1140/epjd/e2009-00118-5

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We study the possibility to store and retrieve quantum information with use of “dark” and ”bright” polaritons in solids with excitonic resonances. In a crystal with Λ-type impurity atoms the upper level lying in the excitonic band of the crystal forms a Fano-type resonant state via configuration interaction with the continuum of crystal’s excitonic band. Polariton states are introduced in case of transitions through excitonic resonance and the properties of these states are studied. We also investigate propagation of dark polariton and show that its shape and quantum state are preserved during propagation. Limiting cases of adiabatic and non-adiabatic turning-on the fields are analyzed in detail.
Abstract Epitaxial semiconductor quantum dots (QDs) have been demonstrated as on‐demand entangled photon sources through biexciton–exciton (XX‐X) cascaded radiative processes. However, perfect entangled photon emitters at the specific wavelengths of 880 nm or 980 nm, that are important for heralded entanglement distribution by absorptive quantum memories, remain a significant challenge. We successfully extend the QD emission wavelength to 880 nm via capping Stranski–Krastanow grown In(Ga)As/GaAs QDs with an ultra‐thin Al x Ga 1− x As layer. After carefully investigating the mechanisms governing the vanishing of wetting‐layer (WL) states and the anisotropy of QDs, we optimize the growth conditions and achieve a strong suppression of the WL emission as well as a measured minor fine structure splitting of only ∼(3.2 ± 0.25) μeV for the exciton line. We further extend this method to fabricate In(Ga)As QDs emitted at 980 nm via introducing InGaAs capping layer, and demonstrate a two‐photon resonant excitation of the biexciton without any additional optical or electrical stabilized source. These QDs with high symmetry and stability represent a highly promising platform for the generation of polarization entanglement and experiments on the interaction of photons from dissimilar sources, such as rare‐earth‐ion‐doped crystals for solid quantum memory.
We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency matched to the Rb D2D2D2 transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD linewidths (1.42 GHz) with both resonant and nonresonant excitation. The QD resonance fluorescence in the low power regime is dominated by Rayleigh scattering, a route to match quantum dot and Rb atom linewidths and to shape the temporal wave packet of the QD photons. Noise in the solid-state environment is relatively benign: there is a blinking of the resonance fluorescence at MHz rates but negligible dephasing of the QD excitonic transition. We therefore demonstrate significant progress towards the realization of an ideal solid-state source of single photons at a key wavelength for quantum technologies.