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arXiv:0808.3705 · Physical Review B

Current fluctuations in rough superconducting tunnel junctions

Georg Heinrich, Frank K. Wilhelm

Published Dec 30, 2009• 0 citations
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Abstract

Intrinsic noise is known to be ubiquitous in Josephson junctions. We introduce a rough tunnel junction model characterized by a very small number of pinholes---transport channels possessing a transmission coefficient close to unity and analyze its transport properties. Although it may still have just a small total leakage current, it can lead to enormous current fluctuations in the low-voltage regime. We show that even fully transparent transport channels between superconductors contribute to shot noise due to the uncertainty in the number of Andreev cycles. We discuss shot-noise enhancement by multiple Andreev reflection in such a junction and investigate whether pinholes might contribute as a microscopic mechanism of two-level current fluctuators. We discuss the connection of these results to the junction resonators observed in Josephson phase qubits.

DOI
10.1103/physrevb.80.214536

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Intrinsic noise is known to be ubiquitous in Josephson junctions. We introduce a rough tunnel junction model characterized by a very small number of pinholes---transport channels possessing a transmission coefficient close to unity and analyze its transport properties. Although it may still have just a small total leakage current, it can lead to enormous current fluctuations in the low-voltage regime. We show that even fully transparent transport channels between superconductors contribute to shot noise due to the uncertainty in the number of Andreev cycles. We discuss shot-noise enhancement by multiple Andreev reflection in such a junction and investigate whether pinholes might contribute as a microscopic mechanism of two-level current fluctuators. We discuss the connection of these results to the junction resonators observed in Josephson phase qubits.
Josephson junctions are dissipationless elements used notably in superconducting nanocircuits. While being indispensable for the making of superconducting quantum bits, they are plagued by intrinsic noise mechanisms that reduce the coherence time of the quantum devices. An important source of such fluctuations may come from the non-cristallinity and disorder of the oxide layer sandwiched between the two superconducting leads. \nIn this work, roughness in a Josephson junction is modeled as a set of pinholes with a universal bimodal distribution of transmission eigenvalues that sum incoherently in the noise power. Each of these channels is treated as a ballistic quantum point contact with a thin barrier that determines the transmission eigenvalue. The noise spectrum is calculated using the quasiclassical Green's function method to analyze high and low transmission limits at non-zero temperature for all interesting frequencies. As suggested by experiments, low transmission channels generate shot noise while fast switching between subgap states creates strong non-poissonian low-frequency noise. However, when analyzed for three different universal models of disorder, the principal contribution to noise is found to come from the partially opened channels. Finally, fluctuations of the noise from sample to sample is seen to be dominated by the contribution of opened channels which may reduce the reproducibility of results between different experiments.
We propose a microscopic model of critical current noise in Josephson junctions based on individual trapping centers in the tunnel-barrier hybridized with electrons in the superconducting leads. We calculate the noise exactly in the limit of no on-site Coulomb repulsion. Our result reveals a noise spectrum that is dramatically different from the usual Lorentzian assumed in simple models. We show that the noise is dominated by sharp subgap resonances associated to the formation of pairs of Andreev bound states, thus providing a possible explanation for the spurious two-level systems (microresonators) observed in Josephson-junction qubits [R. W. Simmonds et al., Phys. Rev. Lett. 93, 077003 (2004).]. Another implication of our model is that each trapping center will contribute a sharp dielectric resonance only in the superconducting phase, providing an effective way to validate our results experimentally. We derive an effective Hamiltonian for a qubit interacting with Andreev bound states, establishing a direct connection between phenomenological models and the microscopic parameters of a Fermionic bath.
The current in a a Coulomb blockaded Josephson junction is sensitive to voltage or phase fluctuations in its electromagnetical environment. This property can be used to detect noise also from non‐Gaussian noise sources. We have experimentally studied IV‐curves of as a function of the shot noise current in a nearby tunnel junction. We observe a linear enhancement of zero‐bias conductance of the Josephson junction as a function of the shot noise power. Furthermore, with increasing shot noise power, the IV‐curves becomes asymmetric with a shift of minimum conductance and the appearance of a local conductance maximum. A quantitative explanation for the asymmetric features due to the non‐Gaussian noise sources is still an open question. There is also motivation to pursue modifications of the current scheme in order to detect individual statistical moments of noise and to connect different noise sources to the Josephson junction.
We analyze the impact of trap states in the oxide layer of a superconducting tunnel junction on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have onsite electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f1/f1/f noise, but also the control of the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second-order perturbation theory, which allows to obtain analytical formulas for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the numerical renormalization group. We present analytical formulations for the subgap bound state energies, the singlet-doublet phase boundary, and the spectral weights. We show that interactions can reverse the supercurrent across the trap. We finally work out the spectrum of junction resonators for qubits in the presence of onsite repulsive electrons and analyze its dependence on microscopic parameters that may be controlled by fabrication.
We analyze the shot noise in a voltage biased superconducting quantum point contact. Results are presented for the single channel case with arbitrary transmission. In the limit of very low transmission it is found that the effective charge, defined from the noise-current ratio, exhibits a steplike behavior as a function of voltage with well-defined plateaus at integer values of the electronic charge. This multiple charge corresponds to the transmitted charge in a multiple Andreev reflection (MAR) process. This effect gradually disappears for increasing transmission due to interference between different MAR processes.
We study the behavior of NbN SIS junctions as radiation detectors with emphasis on the shot noise generated at voltages below the gap voltage. The intrinsically large subgap current of NbN junctions is carried by pinholes with a conduction attributed to multiple Andreev reflection, leading to transported charges q much greater than e. Using this charge enhancement mechanism we explain the junction shot noise characteristics in the unpumped case as well as in the pumped case. The measured mixer noise temperature in the pumped case is more than twice that calculated with standard Tucker theory. The measured double side band noise temperatures are 1450 K at 600 GHz and 2800 K at 950 GHz.