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arXiv:1106.4794 · Physical Review B

Noise and microresonance of critical current in Josephson junction induced by Kondo trap states

Mohammad H. Ansari, Frank K. Wilhelm

Published Dec 1, 2011• 11 citations
arXivHTMLPDF

Abstract

We analyze the impact of trap states in the oxide layer of a superconducting tunnel junction on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have onsite electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of $1/f$ noise, but also the control of the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second-order perturbation theory, which allows to obtain analytical formulas for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the numerical renormalization group. We present analytical formulations for the subgap bound state energies, the singlet-doublet phase boundary, and the spectral weights. We show that interactions can reverse the supercurrent across the trap. We finally work out the spectrum of junction resonators for qubits in the presence of onsite repulsive electrons and analyze its dependence on microscopic parameters that may be controlled by fabrication.

DOI
10.1103/physrevb.84.235102

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We analyze the impact of trap states in the oxide layer of a superconducting tunnel junction on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have onsite electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f1/f1/f noise, but also the control of the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second-order perturbation theory, which allows to obtain analytical formulas for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the numerical renormalization group. We present analytical formulations for the subgap bound state energies, the singlet-doublet phase boundary, and the spectral weights. We show that interactions can reverse the supercurrent across the trap. We finally work out the spectrum of junction resonators for qubits in the presence of onsite repulsive electrons and analyze its dependence on microscopic parameters that may be controlled by fabrication.
We propose a microscopic model of critical current noise in Josephson junctions based on individual trapping centers in the tunnel-barrier hybridized with electrons in the superconducting leads. We calculate the noise exactly in the limit of no on-site Coulomb repulsion. Our result reveals a noise spectrum that is dramatically different from the usual Lorentzian assumed in simple models. We show that the noise is dominated by sharp subgap resonances associated to the formation of pairs of Andreev bound states, thus providing a possible explanation for the spurious two-level systems (microresonators) observed in Josephson-junction qubits [R. W. Simmonds et al., Phys. Rev. Lett. 93, 077003 (2004).]. Another implication of our model is that each trapping center will contribute a sharp dielectric resonance only in the superconducting phase, providing an effective way to validate our results experimentally. We derive an effective Hamiltonian for a qubit interacting with Andreev bound states, establishing a direct connection between phenomenological models and the microscopic parameters of a Fermionic bath.
Josephson junctions are dissipationless elements used notably in superconducting nanocircuits. While being indispensable for the making of superconducting quantum bits, they are plagued by intrinsic noise mechanisms that reduce the coherence time of the quantum devices. An important source of such fluctuations may come from the non-cristallinity and disorder of the oxide layer sandwiched between the two superconducting leads. \nIn this work, roughness in a Josephson junction is modeled as a set of pinholes with a universal bimodal distribution of transmission eigenvalues that sum incoherently in the noise power. Each of these channels is treated as a ballistic quantum point contact with a thin barrier that determines the transmission eigenvalue. The noise spectrum is calculated using the quasiclassical Green's function method to analyze high and low transmission limits at non-zero temperature for all interesting frequencies. As suggested by experiments, low transmission channels generate shot noise while fast switching between subgap states creates strong non-poissonian low-frequency noise. However, when analyzed for three different universal models of disorder, the principal contribution to noise is found to come from the partially opened channels. Finally, fluctuations of the noise from sample to sample is seen to be dominated by the contribution of opened channels which may reduce the reproducibility of results between different experiments.
Noise and decoherence are major obstacles to the implementation of Josephson junction qubits in quantum computing. Recent experiments suggest that two-level systems (TLS) in the oxide tunnel barrier are a source of decoherence. We explore two decoherence mechanisms in which these two-level systems lead to the decay of Rabi oscillations that result when Josephson junction qubits are subjected to strong microwave driving. (A) We consider a Josephson qubit coupled resonantly to a two-level system, i.e., the qubit and TLS have equal energy splittings. As a result of this resonant interaction, the occupation probability of the excited state of the qubit exhibits beating. Decoherence of the qubit results when the two-level system decays from its excited state by emitting a phonon. (B) Fluctuations of the two-level systems in the oxide barrier produce fluctuations and 1∕f1∕f1∕f noise in the Josephson junction critical current I0{I}_{0}I0​. This in turn leads to fluctuations in the qubit energy splitting that degrade the qubit coherence. We compare our results with experiments on Josephson junction phase qubits.
Abstract Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h -BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 / h -BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h -BN layer. We further characterized the superconducting current and voltage ( I – V ) relationships and Fraunhofer pattern of the NbSe 2 / h -BN/Nb junction. Notably, we demonstrated the critical current noise (1/ f noise power) in the h -BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h -BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.
We compute the decoherence caused by 1∕f1∕f1∕f fluctuations at low frequency fff in the critical current I0{I}_{0}I0​ of Josephson junctions incorporated into flux, phase, charge, and hybrid flux-charge superconducting quantum bits (qubits). The dephasing time ${\ensuremath{\tau}}_{\ensuremath{\phi}}$ scales as ${I}_{0}∕\ensuremath{\Omega}\ensuremath{\Lambda}{S}_{{I}_{0}}^{1∕2}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})$, where $\ensuremath{\Omega}∕2\ensuremath{\pi}$ is the energy-level splitting frequency, SI0(1Hz){S}_{{I}_{0}}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})SI0​​(1Hz) is the spectral density of the critical-current noise at 1Hz1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz}1Hz, and $\ensuremath{\Lambda}\ensuremath{\equiv}\ensuremath{\mid}{I}_{0}d\ensuremath{\Omega}∕\ensuremath{\Omega}d{I}_{0}\ensuremath{\mid}$ is a parameter computed for given parameters for each type of qubit that specifies the sensitivity of the level splitting to critical-current fluctuations. Computer simulations show that the envelope of the coherent oscillations of any qubit after time ttt scales as $\mathrm{exp}(\ensuremath{-}{t}^{2}∕2{\ensuremath{\tau}}_{\ensuremath{\phi}}^{2})$ when the dephasing due to critical-current noise dominates the dephasing from all sources of dissipation. We compile published results for fluctuations in the critical current of Josephson tunnel junctions fabricated with different technologies and a wide range in I0{I}_{0}I0​ and area A\mathcal{A}A, and show that their values of SI0(1Hz){S}_{{I}_{0}}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})SI0​​(1Hz) scale to within a factor of 3 of $[144{({I}_{0}∕\ensuremath{\mu}\mathrm{A})}^{2}∕(\mathcal{A}∕\ensuremath{\mu}{\mathrm{m}}^{2})]{(\mathrm{pA})}^{2}∕\mathrm{Hz}$ at 4.2K4.2\phantom{\rule{0.3em}{0ex}}\mathrm{K}4.2K. We empirically extrapolate SI01∕2(1Hz){S}_{{I}_{0}}^{1∕2}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})SI0​1∕2​(1Hz) to lower temperatures using a scaling T(K)∕4.2T(\mathrm{K})∕4.2T(K)∕4.2. Using this result, we find that the predicted values of ${\ensuremath{\tau}}_{\ensuremath{\phi}}$ at 100mK100\phantom{\rule{0.3em}{0ex}}\mathrm{mK}100mK range from $0.8\phantom{\rule{0.5em}{0ex}}\text{to}\phantom{\rule{0.5em}{0ex}}12\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{s}$, and are usually substantially longer than values measured experimentally at lower temperatures.