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arXiv:0711.1945 · Applied Physics Letters

Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

Kenji Shibata, Christo Buizert, A. Oiwa, Kazuhiko Hirakawa, Seigo Tarucha

Published Sep 10, 2007• 23 citations
arXivHTMLPDF

Abstract

The authors have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage, ∣VSD∣<2Δ∕e, where Δ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.

DOI
10.1063/1.2779970

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The authors have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage, ∣VSD∣<2Δ∕e, where Δ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.
We report a first direct observation of proximity supercurrent in a single InAs self-assembled quantum dot coupled to superconducting electrodes. We utilize large SAQDs with strong dot-lead coupling allowing sufficient overlap of quantized state that charge fluctuation in the dot may exceed one electron. Although the charging energy is larger than the superconductivity gap, Δ, the voltage characteristic measured in the current-driven four-terminal geometry signifies a supercurrent flow though the dot. The observed critical current is of the order of 10 pA, and much smaller than expected from theory. This current also shows the parity effect with the number of electrons in the dot, suggesting that the singlet correlation impedes the Cooper pair tunneling.
We study supercurrent in a single InAs self-assembled quantum dot contacted with superconducting leads and demonstrate that for regions where energy level spacing and charging energy are smaller than tunnel coupling, the supercurrent may be controlled by the degree of overlaps between energy levels, which is tunable using a side-gate electrode. In such regions, we find strong correlation between the supercurrent and the normal state conductance when the device parameters are tuned. In a Kondo regime with low Kondo temperature, we find that the scaling of the supercurrent and normal state conductance varies when the side-gate voltage is changed.
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (SSET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the SSET are observed at a temperature of 0.3 K. Coupling of the SSET to the QD is confirmed by using the SSET to perform sensing of the QD charge state.
We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we directly observe a π phase shift in the current phase relation and the negative supercurrent indicating π junction behavior by not only tuning the energy level of SAQD by back-gate but also controlling the coupling between SAQD and electrodes by side-gate. Our results inspire the future quantum information devices which can link optical, spin, and superconducting state.
In view of future macroscopic quantum experiments, we have fabricated prototypes of charge qubits (with tunable Josephson coupling and capacitive gate) provided with capacitively coupled readout single-electron transistor electrometers. The devices are prepared by electron beam direct-writing in conjunction with material deposition by sputtering. All leads are made of Al, and the AlO/sub x/ tunnel barriers are generated by local thermal oxidizing of the surface of the base striplines. The island electrodes are made of Al or Nb in a subsequent deposition step. In the case of Nb it is suitable to protect the barriers by a thin sputtered Al film first. The small-area (100 nm/spl times/100 nm) tunnel junctions have capacitances in the order of a few 10/sup -16/ F; their resistances can be adjusted in a wide range from k/spl Omega/ to M/spl Omega/ with an on-chip spread of less than 10%. The (double) superconducting gap energy was determined to be about 0.4 meV for Al and 1.4 meV for Nb, respectively. Measuring the so-called Coulomb staircase, we have demonstrated the operation of both qubit boxes and sub-e electrometers.