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arXiv:0708.4086 · Physical Review B

Non-Markovian hole spin kinetics in p -type GaAs quantum wells

Pei Zhang, M. W. Wu

Published Nov 27, 2007• 10 citations
arXivHTMLPDF

Abstract

Based on fully microscopic kinetic spin Bloch equation approach, we show the non-Markovian effect in spin dephasing of heavy holes in $p$-type GaAs quantum wells. The non-Markovian effect manifests itself in spin dephasing when the mean spin precession time is shorter than the momentum relaxation time. The spin dephasing becomes slower when the non-Markovian effect is important. Moreover, quantum spin beats due to the memory effect of the non-Markovian hole--longitudinal-optical phonon scattering are predicted.

DOI
10.1103/physrevb.76.193312

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Based on fully microscopic kinetic spin Bloch equation approach, we show the non-Markovian effect in spin dephasing of heavy holes in ppp-type GaAs quantum wells. The non-Markovian effect manifests itself in spin dephasing when the mean spin precession time is shorter than the momentum relaxation time. The spin dephasing becomes slower when the non-Markovian effect is important. Moreover, quantum spin beats due to the memory effect of the non-Markovian hole--longitudinal-optical phonon scattering are predicted.
We report the non-Markovian nature of heavy hole-heavy hole and heavy hole-light hole exciton scattering in a GaAs single quantum well. The homogeneous width depends on the exciton population, which is controlled by the delay time of phase-locked pulses. This effect is explained on the basis of excitation-induced dephasing in Markovian approximation. For short times, the homogeneous width decreases and deviates from the Markovian behavior, due to the non-Markovian behavior of the exciton-exciton scattering. We analyze the homogeneous width by using a weakly interacting boson model including the non-Markovian effect. The correlation time of the exciton-exciton scattering is estimated as 0.43 ps.
Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas is studied by picosecond pump-probe Kerr rotation. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, which decrease with increasing temperature, underlining the importance of hole localization. The mechanism of hole spin coherence generation is discussed.
We investigate the electron spin dephasing in the presence of spin phase recovering by a serried πππ-pulse sequence in nnn-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is based on the kinetic spin Bloch equation approach with all the relevant scatterings explicitly included. We find that the rephasing pulse sequence with a long inter-pulse spacing only has a marginal influence on the spin lifetime in both the strong and weak scattering limits. We show that the spin lifetime can be significantly increased by reducing the inter-pulse spacing. More interestingly, we show that the temperature and density dependences of the spin lifetime in the case of short inter-pulse spacing coincide with those of the momentum scattering time in the low temperature regime, where nonmonotonic behaviors can appear. The origin of this feature is that the scattering under the quick rephasing manipulation mainly performs as the source of the dephasing channel instead of the key to suppress the inhomogeneous broadening. The contributions of the relevant scattering mechanisms are also discussed.
We investigate resonant time-resolved four-wave mixing on GaAs quantum wells at T=300KT=300\mathrm{K}T=300K and at elevated carrier densities using excitation with 11 fs optical pulses. The experiments are compared with non-Markovian quantum-kinetic calculations including carrier-carrier and carrier-LO-phonon scattering. A self-consistently determined two-time-dependent screened random-phase approximation Coulomb potential is used for the carrier-carrier scattering. In experiment and theory we find an unusual real-time response, which is far from an ideal photon echo. Surprisingly, we also find that the dependence of the decay time \ensuremath{\tau} of the four-wave-mixing signal versus the optically excited nonequilibrium electron-hole pair density neh{n}_{\mathrm{eh}}neh​ is quantitatively similar to the corresponding behavior of bulk GaAs. Thus both data sets can be fitted by the same form ${\ensuremath{\tau}}^{\ensuremath{-}1}={\ensuremath{\tau}}_{0}^{\ensuremath{-}1}{+cn}_{\mathrm{eh}}^{1/3}.$ This is not consistent with previous experimental work in a more limited range of carrier densities, which determined different behavior for quasi-two-dimensional (2D) and 3D, i.e., exponents of 0.3 and $0.55\ifmmode\pm\else\textpm\fi{}0.04,$ respectively.
Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.