arXiv:quant-ph/0603152 · Physical Review A
Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process
Lan Zhou, F. M. Hu, Jing Lu, C. P. Sun
Abstract
We investigate the anti-Zeno phenomenon as well as the quantum Zeno effect for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno to the quantum anti-Zeno effect can happen by adjusting magnetic flux and gate voltage.