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arXiv:quant-ph/0503181 · Physical Review A

Atom nanolithography with multilayer light masks: Particle optics analysis

R. Arun, Ilya Sh. Averbukh, Tilman Pfau

Published Aug 25, 2005• 8 citations
arXivHTMLPDF

Abstract

We studied the focusing of atoms by multiple layers of standing light waves in the context of atom lithography. In particular, atomic localization by a double-layer light mask is examined using the optimal squeezing approach. Operation of the focusing setup is analyzed both in the paraxial approximation and in the regime of nonlinear spatial squeezing for the thin-thin, as well as thin-thick, atom lens combinations. It is shown that the optimized double light mask may considerably reduce the imaging problems, improve the quality of focusing, and enhance the contrast ratio of the deposited structures.

DOI
10.1103/physreva.72.023417

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Atom lithography with near-resonant standing waves

R. Arun, Offir Cohen, Ilya Sh. Averbukh

We study the optimal focusing of two-level atoms with a near-resonant standing wave light, using both classical and quantum treatments of the problem in the thin- and thick-lens regimes. It is found that the near-resonant standing wave focuses the atoms with a reduced background in comparison with far-detuned light fields. For some parameters, the quantum atomic distribution shows even better localization than the classical one. Spontaneous emission effects are included via the technique of quantum Monte Carlo wave function simulations. We investigate the extent to which nonadiabatic and spontaneous emission effects limit the achievable minimal size of the deposited structures.

arXiv:quant-ph/0606145•Physical Review A•Jun 9, 2010•4 citations

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The most efficient method for controlling the motion of material particles in experimental physics is the use of interaction potentials with electromagnetic fields. The static magnetic and electric interaction potentials are used in the optics of charged particles. In the optics of neutral atoms, the various interaction potentials of atoms with laser and electromagnetic fields are used in addition to the static fields. The effective methods of diffraction, interference, mirror reflection of atoms are implemented in atom optics. The most difficult problem in atom optics is the problem of high-resolution focusing of neutral atoms, which is promising for the nondestructive method for probing the surface at the atomic level, as well as for the creation of nanostructures on the surface. Although there are many proposals for focusing of atomic beams, this problem is experimentally unsolved. The main difficulty is the creation of the interaction potential of the atom with the electromagnetic field that is close to an ideal lens for atoms.In this paper, we experimentally implement another approach to the problem of focusing and construction of an image in atom optics, which is based on a well known idea of optical pinhole camera. The pinhole camera in optics is a camera without lens. Light forming an image passes through a small hole. In our experiment with the atom pinhole camera the Cr atomic beam passes through a set of holes in a metal mask and thereby forms, by analogy with optics, a glowing object of a given geometry. The atoms pass through the holes in the mask, propagate in vacuum along rectilinear trajectories, similar to light rays, and are incident on a thin film (thickness 5 mum) placed at a distance of 90 mm from the mask with a large number (n =107-108/cm2) of nanoholes (50 nm diameter). Each hole of the film is a pinhole camera for atoms, which forms its individual image of the object on the substrate surface placed at a distance of l = 5mum behind the film.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 1, 2007•0 citations

Atom lithography:creating patterned magnetic layers

T. Meijer

Atom lithography is a technique to structure layers of atoms during deposition, using interactions of near-resonant light fields with neutral atoms. The basic scheme uses a standing wave light field, aligned just above a substrate, while a beam of atoms impinges perpendicularly on the standing wave light field. The interaction of the light field and the atoms focuses the atoms towards the crests or troughs of the standing wave intensity, dependent on the tuning of the light field. The focused atoms are subsequently deposited on the substrate, resulting in an array of lines, whose periodicity is determined by the wavelength of the light field. The standing wave light field can therefore be seen as an array of lenses, focusing the atom beam into an array of lines. The first experiments on atom lithography were performed in the 1990s with sodium and chromium. In this thesis experiments with iron are described, which is a magnetic element and thus allows for the creation of magnetic nanostructures. To focus atom beams into structures using atom lithography, well-colimated atom beams are required. The most common technique to create collimated atom beams is transverse laser cooling, but iron has no closed optical transition suitable for laser cooling. Fortunately Smeets and Te Sligte found that even then atom lithography of iron is possible. If the standing wave light field is considered to be an array of lenses, the focusing of the atom beam on a single lens is determined by the local collimation of the atom beam at that position. This local collimation is determined by the geometry of the beam source and the distance of the beam source to the standing wave lens. Using a small beam source (e.g. 1 mm diameter) positioned far from the standing wave (e.g. 1 m), the geometrically collimated atom beam is suitable for atom lithography. Chapter 3 shows what the implications of geometric collimation are on the structure formation in atom lithography. The geometric effects that locally collimate the atom beam on the sample also introduce local offset angles of the atom beam with respect to the focusing light field. Structure formation has been observed with lines of up to 7 nm high on a background layer of 15 nm average height, over areas of up to 400 µm × 6 mm. This indicates that the offset angles can vary over an 8 mrad range, which is more than an order of magnitude larger than the local angle of collimation. The offset angle influence the local geometry of the deposited structures: an increasing offset angle decreases the local line height, increases the width and creates a skewness in the local line shape. The local geometry of the lines has been modelled with a Monte Carlo particle tracking model and the results were compared to experiments. 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As a reference for periodic atom lithography structures, periodic line structures are created with interference lithography in a polymer layer and onto these structures thin layers of FexNi1-x are shadow deposited, thereby creating a layer periodically modulated in both height and elemental composition. This periodic modulation in composition has been observed with SEM-EDX on sub-micron scales. The structures showed a clear magnetic anisotropy with an easy axis along the direction of the lines, in accordance with expectations. In Chapter 5, the magnetic properties of atom lithographic iron line structures are presented. Using MOKE microscopy, direct comparison of structured and unstructured parts of a sample is possible, which allows for the observation of clear magnetic signatures due to the atom lithographic structuring. In layers of an average thickness of about 15 nm, no anisotropy is induced by the line structures, while a magnetic easy axis along the direction of the lines is expected. The line structures introduce an isotropic increase in the coercivity of the layers, indicating that the line structures can be considered as isotropic corrugations instead of directional line structures. For layers of 30 nm average thickness and thus higher line structures, a clear magnetic anisotropy is observed for the highest line structures. This anisotropy can be seen as a magnetic easy axis along the direction of the lines, as expected for line structures. However, we also observe a sharp increase in coercivity for applied fields perpendicular to the lines. This phenomenon is intriguing and may be explained by a pinning of head-to-head domain walls along the direction of the lines. In Chapter 5, we also report on the first results of co-deposition of FexNi1-x, where the Fe is structured into lines using atom lithography, while the Ni is deposited uniformly, thereby creating an alloy of modulating composition. Magnetic analysis of these structures indicates that these structures are anisotropic, both the coercivity and the shape of domain walls is dependent on the angle of the applied field relative to the line structures. Finally in Chapter 6, we investigate the possibilities to focus a thermal beam of atoms into a single 100 nm spot using light fields, thereby creating a nanopencil suitable for deposition of nanostructures. A Monte Carlo particle tracking program was developed to model the all optical focusing or funneling of 10 µm sized atom beams to a 100 nm spot. This model included effects of initial beam divergence, magnetic substructure, laser cooling, and spontaneous as well as stimulated diffusion and it was applied to a number of promising light field configurations. The best results obtained for experimentally realistic settings are a beam focused to a full width at half maximum of FWHM = 0.55 µm in a blue detuned hollow beam where atoms are focused towards the dark center, or a FWHM = 0.31 µm in a red detuned axicon light field, where atoms are focused towards the maximum intensity at the heart line. However, in the latter case the focused beam has a flux only 25 times larger than the background flux, which is unpractical for applications. The limiting factors of all schemes are heating due to stimulated diffusion and the limited interaction time available for a thermal beam of atoms. A nanopencil could be possible if it were based on the focussing of a slow and / or monochromatic atom beam, but this would seriously complicate the practical application of such a device.

•Jan 1, 2012•0 citations

A Proposed Nanofabrication Technique Using Optical Masks for Metastable Atom Lithography

Mark A. Baker, A.J. Palmer, Robert T. Sang

We present an overview of our progress towards using optical fields as 'light masks' for metastable atomic beam lithography. Numerical simulations have been undertaken to model the interaction of a beam of metastable neon atoms with a standing wave of 640.2 nm laser light. The current experimental setup and the proposed scheme for focusing the atoms is detailed

Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)•Jan 25, 2006•0 citations

Steady-state light-induced forces in atomic nanolithography

A. V. Bezverbnyĭ, Прудников Олег Николаевич, A. V. Taǐchenachev +2 more

An analysis of general characteristics of light-induced forces is presented for arbitrary monochromatic masks in which optical pumping of atoms and spontaneous emission play an important role. Dependence of regions of localization on detuning and ellipticity is determined for cyclic transitions of two types: J å J with half-integer J and J å J + 1 with arbitrary J . Numerical simulations of atomic beam focusing with one-and two-dimensional light masks show that spatial atom distributions with narrow features and high contrast can be formed in dissipative masks. In particular, spherical aberration is substantially reduced when the pumping field is tuned to a J å J + 1 transition with large J in lin ∼ lin configuration as compared to nondissipative masks.

Journal of Experimental and Theoretical Physics•Oct 1, 2005•3 citations

Structure formation in atom lithography using geometric collimation

T. Meijer, Joshua P. Beardmore, C. G. C. H. M. Fabrie +5 more

Atom lithography uses standing wave light fields as arrays of lenses to focus neutral atom beams into line patterns on a substrate. Laser cooled atom beams are commonly used, but an atom beam source with a small opening placed at a large distance from a substrate creates atom beams which are locally geometrically collimated on the substrate. These beams have local offset angles with respect to the substrate. We show that this affects the height, width, shape, and position of the created structures. We find that simulated effects are partially obscured in experiments by substrate-dependent diffusion of atoms, while scattering and interference just above the substrate limit the quality of the standing wave lens. We find that in atom lithography without laser cooling the atom beam source geometry is imaged onto the substrate by the standing wave lens. We therefore propose using structured atom beam sources to image more complex patterns on subwavelength scales in a massively parallel way.

Applied Physics B•Oct 11, 2011•7 citations
We studied the focusing of atoms by multiple layers of standing light waves in the context of atom lithography. In particular, atomic localization by a double-layer light mask is examined using the optimal squeezing approach. Operation of the focusing setup is analyzed both in the paraxial approximation and in the regime of nonlinear spatial squeezing for the thin-thin, as well as thin-thick, atom lens combinations. It is shown that the optimized double light mask may considerably reduce the imaging problems, improve the quality of focusing, and enhance the contrast ratio of the deposited structures.
We study the optimal focusing of two-level atoms with a near-resonant standing wave light, using both classical and quantum treatments of the problem in the thin- and thick-lens regimes. It is found that the near-resonant standing wave focuses the atoms with a reduced background in comparison with far-detuned light fields. For some parameters, the quantum atomic distribution shows even better localization than the classical one. Spontaneous emission effects are included via the technique of quantum Monte Carlo wave function simulations. We investigate the extent to which nonadiabatic and spontaneous emission effects limit the achievable minimal size of the deposited structures.
The most efficient method for controlling the motion of material particles in experimental physics is the use of interaction potentials with electromagnetic fields. The static magnetic and electric interaction potentials are used in the optics of charged particles. In the optics of neutral atoms, the various interaction potentials of atoms with laser and electromagnetic fields are used in addition to the static fields. The effective methods of diffraction, interference, mirror reflection of atoms are implemented in atom optics. The most difficult problem in atom optics is the problem of high-resolution focusing of neutral atoms, which is promising for the nondestructive method for probing the surface at the atomic level, as well as for the creation of nanostructures on the surface. Although there are many proposals for focusing of atomic beams, this problem is experimentally unsolved. The main difficulty is the creation of the interaction potential of the atom with the electromagnetic field that is close to an ideal lens for atoms.In this paper, we experimentally implement another approach to the problem of focusing and construction of an image in atom optics, which is based on a well known idea of optical pinhole camera. The pinhole camera in optics is a camera without lens. Light forming an image passes through a small hole. In our experiment with the atom pinhole camera the Cr atomic beam passes through a set of holes in a metal mask and thereby forms, by analogy with optics, a glowing object of a given geometry. The atoms pass through the holes in the mask, propagate in vacuum along rectilinear trajectories, similar to light rays, and are incident on a thin film (thickness 5 mum) placed at a distance of 90 mm from the mask with a large number (n =107-108/cm2) of nanoholes (50 nm diameter). Each hole of the film is a pinhole camera for atoms, which forms its individual image of the object on the substrate surface placed at a distance of l = 5mum behind the film.
Atom lithography is a technique to structure layers of atoms during deposition, using interactions of near-resonant light fields with neutral atoms. The basic scheme uses a standing wave light field, aligned just above a substrate, while a beam of atoms impinges perpendicularly on the standing wave light field. The interaction of the light field and the atoms focuses the atoms towards the crests or troughs of the standing wave intensity, dependent on the tuning of the light field. The focused atoms are subsequently deposited on the substrate, resulting in an array of lines, whose periodicity is determined by the wavelength of the light field. The standing wave light field can therefore be seen as an array of lenses, focusing the atom beam into an array of lines. The first experiments on atom lithography were performed in the 1990s with sodium and chromium. In this thesis experiments with iron are described, which is a magnetic element and thus allows for the creation of magnetic nanostructures. To focus atom beams into structures using atom lithography, well-colimated atom beams are required. The most common technique to create collimated atom beams is transverse laser cooling, but iron has no closed optical transition suitable for laser cooling. Fortunately Smeets and Te Sligte found that even then atom lithography of iron is possible. If the standing wave light field is considered to be an array of lenses, the focusing of the atom beam on a single lens is determined by the local collimation of the atom beam at that position. This local collimation is determined by the geometry of the beam source and the distance of the beam source to the standing wave lens. Using a small beam source (e.g. 1 mm diameter) positioned far from the standing wave (e.g. 1 m), the geometrically collimated atom beam is suitable for atom lithography. Chapter 3 shows what the implications of geometric collimation are on the structure formation in atom lithography. The geometric effects that locally collimate the atom beam on the sample also introduce local offset angles of the atom beam with respect to the focusing light field. Structure formation has been observed with lines of up to 7 nm high on a background layer of 15 nm average height, over areas of up to 400 µm × 6 mm. This indicates that the offset angles can vary over an 8 mrad range, which is more than an order of magnitude larger than the local angle of collimation. The offset angle influence the local geometry of the deposited structures: an increasing offset angle decreases the local line height, increases the width and creates a skewness in the local line shape. The local geometry of the lines has been modelled with a Monte Carlo particle tracking model and the results were compared to experiments. It was found that the highest and narrowest lines suffer from significant broadening due to surface diffusion in experiments, limiting the achievable structure width of iron on SiOx samples to about 80 nm. We have also found that in atom lithography without laser cooling, each standing wave lens is effectively imaging the source geometry onto the substrate. We therefore propose using structured atom beam sources to image more complex patterns on sub-wavelength scales in a parallel way. The reason to use iron in atom lithography, is the option to create magnetic nanostructures. However, in previous experiments no clear magnetic signature of the atom lithographic structuring of iron was found. Therefore in Chapter 4 firstly the magnetic properties of unstructured layers of iron (Fe), nickel (Ni) and FexNi1-x are investigated. These layers are all ferromagnetic, but with a reduced magnetic moment compared to bulk values due to contaminations and crystal growth effects. As a reference for periodic atom lithography structures, periodic line structures are created with interference lithography in a polymer layer and onto these structures thin layers of FexNi1-x are shadow deposited, thereby creating a layer periodically modulated in both height and elemental composition. This periodic modulation in composition has been observed with SEM-EDX on sub-micron scales. The structures showed a clear magnetic anisotropy with an easy axis along the direction of the lines, in accordance with expectations. In Chapter 5, the magnetic properties of atom lithographic iron line structures are presented. Using MOKE microscopy, direct comparison of structured and unstructured parts of a sample is possible, which allows for the observation of clear magnetic signatures due to the atom lithographic structuring. In layers of an average thickness of about 15 nm, no anisotropy is induced by the line structures, while a magnetic easy axis along the direction of the lines is expected. The line structures introduce an isotropic increase in the coercivity of the layers, indicating that the line structures can be considered as isotropic corrugations instead of directional line structures. For layers of 30 nm average thickness and thus higher line structures, a clear magnetic anisotropy is observed for the highest line structures. This anisotropy can be seen as a magnetic easy axis along the direction of the lines, as expected for line structures. However, we also observe a sharp increase in coercivity for applied fields perpendicular to the lines. This phenomenon is intriguing and may be explained by a pinning of head-to-head domain walls along the direction of the lines. In Chapter 5, we also report on the first results of co-deposition of FexNi1-x, where the Fe is structured into lines using atom lithography, while the Ni is deposited uniformly, thereby creating an alloy of modulating composition. Magnetic analysis of these structures indicates that these structures are anisotropic, both the coercivity and the shape of domain walls is dependent on the angle of the applied field relative to the line structures. Finally in Chapter 6, we investigate the possibilities to focus a thermal beam of atoms into a single 100 nm spot using light fields, thereby creating a nanopencil suitable for deposition of nanostructures. A Monte Carlo particle tracking program was developed to model the all optical focusing or funneling of 10 µm sized atom beams to a 100 nm spot. This model included effects of initial beam divergence, magnetic substructure, laser cooling, and spontaneous as well as stimulated diffusion and it was applied to a number of promising light field configurations. The best results obtained for experimentally realistic settings are a beam focused to a full width at half maximum of FWHM = 0.55 µm in a blue detuned hollow beam where atoms are focused towards the dark center, or a FWHM = 0.31 µm in a red detuned axicon light field, where atoms are focused towards the maximum intensity at the heart line. However, in the latter case the focused beam has a flux only 25 times larger than the background flux, which is unpractical for applications. The limiting factors of all schemes are heating due to stimulated diffusion and the limited interaction time available for a thermal beam of atoms. A nanopencil could be possible if it were based on the focussing of a slow and / or monochromatic atom beam, but this would seriously complicate the practical application of such a device.
An analysis of general characteristics of light-induced forces is presented for arbitrary monochromatic masks in which optical pumping of atoms and spontaneous emission play an important role. Dependence of regions of localization on detuning and ellipticity is determined for cyclic transitions of two types: J å J with half-integer J and J å J + 1 with arbitrary J . Numerical simulations of atomic beam focusing with one-and two-dimensional light masks show that spatial atom distributions with narrow features and high contrast can be formed in dissipative masks. In particular, spherical aberration is substantially reduced when the pumping field is tuned to a J å J + 1 transition with large J in lin ∼ lin configuration as compared to nondissipative masks.
Atom lithography uses standing wave light fields as arrays of lenses to focus neutral atom beams into line patterns on a substrate. Laser cooled atom beams are commonly used, but an atom beam source with a small opening placed at a large distance from a substrate creates atom beams which are locally geometrically collimated on the substrate. These beams have local offset angles with respect to the substrate. We show that this affects the height, width, shape, and position of the created structures. We find that simulated effects are partially obscured in experiments by substrate-dependent diffusion of atoms, while scattering and interference just above the substrate limit the quality of the standing wave lens. We find that in atom lithography without laser cooling the atom beam source geometry is imaged onto the substrate by the standing wave lens. We therefore propose using structured atom beam sources to image more complex patterns on subwavelength scales in a massively parallel way.