The Cooper-pair size (i.e., the BCS coherence length) in low-dimensional superconductors is dramatically modified by quantum-size effects. In particular, for nanowires made of conventional superconducting materials, we show that the coherence length exhibits size-dependent drops by two-three orders of magnitude and reaches values found in high-
Tc superconductors. This phenomenon is surprisingly similar to the well-known BCS-BEC crossover but with one important exception: it is driven by the transverse quantization of the electron spectrum rather than by the strength of the fermion-fermion interaction. Similar results can be expected for other systems with the same structure of the single-particle spectrum, e.g, for superfluid Fermi gases confined in a quantum-wire or quantum-well geometry.
We analyze electric transport and noise properties at 4.2 K of self-shunted superconductor-normal metal-superconductor (SNS) sandwich-type Josephson junctions, comprising
Nb as the superconductor and
Hf-
Ti as the normal conducting material, with lateral dimensions down to approximately
80 nm. The junctions are fabricated with an optimized multilayer
Nb technology based on nanopatterning by electron-beam lithography and chemical-mechanical polishing. The dependence of transport properties on the junction geometry (lateral size and barrier thickness ${d}_{\mathrm{Hf}\mathrm{\ensuremath{-}}\mathrm{Ti}}$) is studied, yielding a characteristic voltage
Vc up to approximately $100\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{V}$ for the smallest ${d}_{\mathrm{Hf}\mathrm{\ensuremath{-}}\mathrm{Ti}}=17$ nm. The observed small hysteresis in the current-voltage curves of devices with high
Vc and large size can be attributed to self-heating of the junctions and fitted with an extended version of the resistively shunted junction model. Measurements of voltage noise of single junctions are consistent with the model including self-heating effects. The potential of our technology for further miniaturization of nanoscale superconducting quantum interference devices and for the improvement of their performance is discussed.