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arXiv:cond-mat/9708163

Comment on ``Exact non-equilibrium transport through point contacts in quantum wires and fractional quantum Hall devices''

Sergei Skorik

Published Aug 21, 1997• 0 citations
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Abstract

Fendley, Ludwig and Saleur [Phys. Rev. B52 (1995) 8934] have obtained an expression for the non-equilibrium current through a constriction in the quantum Hall bar based on the Bethe ansatz technique and the Bolzmann equation. In this Comment we draw attention to a serious flaw in their derivation. We argue that their result is correct in the linear response limit but should be taken with a care out of equilibrium for finite bias. The reason is in the use of the equilibrium scattering matrix in the place of the transition probability amplitude out of equilibrium, the substitution which was not shown to be legimate.

DOI
10.48550/arxiv.cond-mat/9708163

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Reply to Skorik's Comment

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In a series of papers we combined the Bethe ansatz with a kinetic (Boltzmann) equation in order to compute exactly transport properties in a Luttinger liquid with an impurity. In a recent comment [cond-mat/9708163], Skorik claimed that while our results were correct in linear response, there was a ``serious flaw'' in our calculation at finite voltage. We explain here why Skorik's arguments are inappropriate, and that there is no flaw in our work [cond-mat/9408068; cond-mat/9505031; cond-mat/9503172].

arXiv:cond-mat/9710205•Oct 20, 1997•0 citations

Exact Conductance through Point Contacts in the ν=1/3 Fractional Quantum Hall Effect

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The conductance for tunneling through an impurity in a Luttinger liquid is described by a universal scaling function. We compute this scaling function exactly, by using the thermodynamic Bethe ansatz and a kinetic (Boltzmann) equation. This model has been proposed to describe resonant tunneling through a point contact between two $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1/3$ quantum Hall edges. Recent experiments on quantum Hall devices agree well with our exact results. We also derive the exact conductance and $I\left(V\right)$ curve, out of equilibrium, in this fully interacting system.

arXiv:cond-mat/9408068•Physical Review Letters•Apr 10, 1995•330 citations

Exact nonequilibrium transport through point contacts in quantum wires and fractional quantum Hall devices

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We have recently calculated exact nonequilibrium quantum transport properties through a point contact in a Luttinger liquid. Using a particular quasiparticle basis of the Hilbert space dictated by integrability, we here compute explicitly the exact I(V) characteristic and conductance out of equilibrium as a function of driving voltage V and temperature T. These are described by universal scaling functions of two variables, the scaled point-contact interaction strength, and V/T. The differential-conductance curve as a function of the interaction strength broadens significantly as V/T is increased, and develops a pronounced maximum at a (universal) critical value (eV/${\mathit{k}}_{\mathit{B}}$T)=7.188 68. . .. In addition, we derive an exact duality between strong and weak backscattering. The theory presented here has recently been realized experimentally in resonant tunneling-transport experiments between edge states in fractional quantum Hall effect devices. In this context the exact duality is between electron tunneling and Laughlin-quasiparticle tunneling.

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Scattering Bethe Ansatz approach

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We derive the transport properties of a quantum impurity system, often realized as a quantum dot, subject to a source-drain bias voltage at zero temperature and magnetic field. Using the Scattering Bethe Anstaz(SBA), a generalization of the traditional Thermodynamic Bethe Ansatz(TBA) to open systems out of equilibrium, we derive some transport results for the small quantum dot, described by Anderson impurity Hamiltonian. Exact dot occupation out of equilibrium and the nonlinear conductance are obtained by introducing phenomenological spin- and charge-fluctuation distribution functions in the computation of the current. The current and dot occupation as a function of voltage are evaluated numerically. We also vary the gate voltage and study the transition from the mixed valence to the Kondo regime in the presence of a non-equilibrium current. For the larger quantum dot the Interacting Resonance Level Model is used to describe the strog correlation problem in this system. We show some current vs voltage results and compare with other theoretical results. We conclude with the difficulties we encountered by using this method and suggest some future extensions related to this SBA approach.

•Jan 1, 2010•0 citations
Fendley, Ludwig and Saleur [Phys. Rev. B52 (1995) 8934] have obtained an expression for the non-equilibrium current through a constriction in the quantum Hall bar based on the Bethe ansatz technique and the Bolzmann equation. In this Comment we draw attention to a serious flaw in their derivation. We argue that their result is correct in the linear response limit but should be taken with a care out of equilibrium for finite bias. The reason is in the use of the equilibrium scattering matrix in the place of the transition probability amplitude out of equilibrium, the substitution which was not shown to be legimate.
In a series of papers we combined the Bethe ansatz with a kinetic (Boltzmann) equation in order to compute exactly transport properties in a Luttinger liquid with an impurity. In a recent comment [cond-mat/9708163], Skorik claimed that while our results were correct in linear response, there was a ``serious flaw'' in our calculation at finite voltage. We explain here why Skorik's arguments are inappropriate, and that there is no flaw in our work [cond-mat/9408068; cond-mat/9505031; cond-mat/9503172].
The conductance for tunneling through an impurity in a Luttinger liquid is described by a universal scaling function. We compute this scaling function exactly, by using the thermodynamic Bethe ansatz and a kinetic (Boltzmann) equation. This model has been proposed to describe resonant tunneling through a point contact between two $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1/3$ quantum Hall edges. Recent experiments on quantum Hall devices agree well with our exact results. We also derive the exact conductance and I(V)I\left(V\right)I(V) curve, out of equilibrium, in this fully interacting system.
We have recently calculated exact nonequilibrium quantum transport properties through a point contact in a Luttinger liquid. Using a particular quasiparticle basis of the Hilbert space dictated by integrability, we here compute explicitly the exact I(V) characteristic and conductance out of equilibrium as a function of driving voltage V and temperature T. These are described by universal scaling functions of two variables, the scaled point-contact interaction strength, and V/T. The differential-conductance curve as a function of the interaction strength broadens significantly as V/T is increased, and develops a pronounced maximum at a (universal) critical value (eV/kB{\mathit{k}}_{\mathit{B}}kB​T)=7.188 68. . .. In addition, we derive an exact duality between strong and weak backscattering. The theory presented here has recently been realized experimentally in resonant tunneling-transport experiments between edge states in fractional quantum Hall effect devices. In this context the exact duality is between electron tunneling and Laughlin-quasiparticle tunneling.
One of the manifestations of the integrability of electron dynamics in one dimension is the existence of non-equilibrium stationary states. Such states emerge near a quantum point contact coupling two quantum Hall edges with different chemical potentials. We use a non-equilibrium bosonization technique to show that the effective temperature in such states at the fractional quantum Hall edge has a universal linear dependence on the current through the contact. In contrast, the temperature of one-dimensional equilibrium systems scales as the square root of the corresponding dissipating power. This striking difference from the equilibrium behavior can be used to experimentally detect these unique non-equilibrium states.
We (re)consider in this paper the problem of tunnelling through an impurity in a quantum wire with arbitrary Luttinger interaction parameter. By combining the integrable approach developed in the case of quantum Hall edge states with the introduction of radiative boundary conditions to describe the adiabatic coupling to the reservoirs, we are able to obtain the exact equilibrium and non-equilibrium current. One of the most striking features observed is the appearance of negative differential conductances out of equilibrium in the strongly interacting regime g ⩽0.2. In spite of the various charging effects, a remarkable form of duality is still observed. New results on the computation of transport properties in integrable impurity problems are gathered in the appendices. In particular, we prove that the TBA results satisfy a remarkable relation, originally derived using the Keldysh formalism, between the order T 2 correction to the current out of equilibrium and the second derivative of this current at T = 0 with respect to the voltage: this is the first direct link between the TBA approach out of equilibrium and the traditional Keldysh one
We derive the transport properties of a quantum impurity system, often realized as a quantum dot, subject to a source-drain bias voltage at zero temperature and magnetic field. Using the Scattering Bethe Anstaz(SBA), a generalization of the traditional Thermodynamic Bethe Ansatz(TBA) to open systems out of equilibrium, we derive some transport results for the small quantum dot, described by Anderson impurity Hamiltonian. Exact dot occupation out of equilibrium and the nonlinear conductance are obtained by introducing phenomenological spin- and charge-fluctuation distribution functions in the computation of the current. The current and dot occupation as a function of voltage are evaluated numerically. We also vary the gate voltage and study the transition from the mixed valence to the Kondo regime in the presence of a non-equilibrium current. For the larger quantum dot the Interacting Resonance Level Model is used to describe the strog correlation problem in this system. We show some current vs voltage results and compare with other theoretical results. We conclude with the difficulties we encountered by using this method and suggest some future extensions related to this SBA approach.