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arXiv:cond-mat/9609011 · Physical review. B, Condensed matter

Competition between the Mott transition and Anderson localization in one-dimensional disordered interacting electron systems

Satoshi Fujimoto, Norio Kawakami

Published Oct 15, 1996• 20 citations
arXivHTMLPDF

Abstract

The competition between the Mott transition and the Anderson localization in one-dimensional electron systems is studied with the bosonization and renormalization-group methods. The $\ensuremath{\beta}$ function is calculated up to second order in the strength of diagonal disorder by using a replica trick. It is found that sufficiently strong forward scattering by random impurities destroys the Mott-Hubbard gap, and backward scattering gives rise to Anderson localization for the resulting gapless state. On the other hand, if the umklapp interaction is strong enough, the Mott insulating state still overwhelms the Anderson localization.

DOI
10.1103/physrevb.54.r11018

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Physical review. B, Condensed matter•Oct 15, 1994•21 citations
The competition between the Mott transition and the Anderson localization in one-dimensional electron systems is studied with the bosonization and renormalization-group methods. The \ensuremathβ\ensuremath{\beta}\ensuremathβ function is calculated up to second order in the strength of diagonal disorder by using a replica trick. It is found that sufficiently strong forward scattering by random impurities destroys the Mott-Hubbard gap, and backward scattering gives rise to Anderson localization for the resulting gapless state. On the other hand, if the umklapp interaction is strong enough, the Mott insulating state still overwhelms the Anderson localization.
Competition between Mott and Anderson metal-insulator transitions is studied in a one dimensional spinless fermion system of 200 sites. Although the long range charge density wave (CDW) order and gap of the Mott phase are destroyed by weak randomness, the elementary excitations are still solitons based on the local CDW order. The solitons are easily localized in the random potential. Thus for weak randomness and large interaction, a disordered Mott phase exists in which the localization is determined by the local CDW order in contrast to the conventional Anderson localization picture in the weak interaction limit.
The interplay between Anderson localization and Mott localization is considered in the vicinity of one dimension for a collection of interacting spinless fermions or repulsive bosons. We demonstrate that in the absence of commensurability effects an Anderson localization transition does take place for d\ensuremath{\le}1. It is characterized by a critical dynamical exponent z having value z=2-d for d\ensuremath{\rightarrow}1-0, in disagreement with the previous claims that z always equals d. We find that there is only a localized phase for d>1 and expect that this similarity between free fermions and interacting quantum particles will be valid up to two dimensions. We also consider the competition between the effects of commensurability, disorder, and interaction in exactly one dimension. The outcome strongly depends on the order of umklapp scattering responsible for the formation of the Mott insulator in the pure case. If it is \ensuremath{\Delta}k=2kF{\mathit{k}}_{\mathit{F}}kF​ scattering and the disorder is sufficiently weak, the Mott phase survives and the Anderson phase intervenes almost everywhere between the Mott insulator and the conductor, except at one special symmetry-enhanced point corresponding to the fixed commensurate filling: here, as in the pure case, the Mott transition belongs to the Kosterlitz-Thouless universality class. For sufficiently strong disorder, or for any disorder and higher-order scattering, the path from the Mott insulator phase (if it survives) to the conductor always crosses the Anderson phase.
The one-dimensional Mott metal-insulator transition is a typical strong correlation effect triggered by the Umklapp scattering. However, in a physical system, the Umklapp scattering coexists with the normal scattering, including both forward and backward scattering, which conserves the total momentum of scattered electrons. Therefore, it is not easy to quantify the contribution of the Umklapp scattering in a Mott metal-insulator transition. To resolve this difficulty, we propose to explore these scattering processes separately. We study the contribution of each scattering process in the one-dimensional Hubbard model using the momentum-space density-matrix renormalization group (kDMRG) and bosonization methods. Our kDMRG calculation confirms that the Mott charge gap results from the Umklapp scattering, but the normal scattering processes strongly renormalize its value. Furthermore, we present a scaling analysis of the Mott charge gap in the bosonization theory and show that the interplay between the Umklapp and forward scattering dictates the charge dynamics in the half-filled Hubbard model.
In this thesis we consider a variational wave function approach as a possible route to describe the competition between disorder and strong electron-electron interaction in two dimensions. In particular we aim to obtain a transparent and physically intuitive understanding of the competition between these two localizing forces within the simplest model where they both are active, namely the disordered Hubbard model at half filling and in a square lattice. Our approach is based on an approximate form of the ground-state wave function, which we believe contains the physically relevant ingredients for a correct description of both the Mott and the Anderson insulators, where electrons are localized by the Coulomb repulsion and by disorder, respectively. For strongly interacting fermionic systems, a standard variational wave function is constructed by a correlation term acting on a Slater determinant, the latter being an uncorrelated metallic state. Previous variational calculations showed that a long-range density-density correlation factor, so called Jastrow factor, is needed to correctly describe the Mott insulator [9]. This term, which is collective by definition, correlates spatially charge uctuations, thus preventing their free motion that would otherwise imply metallic conductance. For this reason, our variational wave function does include such a term. Anderson localization is instead mostly a matter of single-particle wave functions, hence it pertains to the uncorrelated Slater determinant which the Jastrow factor acts onto. We consider both the case in which we enforce paramagnetism in the wave function and the case in which we allow for magnetic ordering. Summarizing briefly our results, we find that, when the variational wave function is forced to be paramagnetic, the Anderson insulator to Mott insulator transition is continuous. This transition can be captured by studying several quantities. In particular, a novel one that we have identified and that is easily accessible variationally is the disconnected density-density fluctuation at long wavelength, defined by lim where ^nq is the Fourier transform of the charge density at momentum q, (...) denotes quantum average at fixed disorder and the overbar represents the average over disorder configurations. We find that Ndisc q!0 is everywhere finite in the Anderson insulator and vanishes critically at the Mott transition, staying zero in the Mott insulator. When magnetism is allowed and the hopping only connects nearest neighbor sites, upon increasing interaction the paramagnetic Anderson insulator first turns antiferromagnetic and finally the magnetic and compressible Anderson insulator gives way to an incompressible antiferromagnetic Mott insulator. The optimized uncorrelated Slater determinant is always found to be the eigenstate of a disordered non-interacting effective Hamiltonian, which suggests that the model is never metallic. Finally, when magnetism is frustrated by a next to nearest neighbor hopping, the overall sequence of phases does not change. However, the paramagnetic to magnetic transition within the Anderson insulator basin of stability turns first order. Indeed, within the magnetically ordered phase, we find many almost degenerate paramagnetic states with well defined local moments. This is suggestive of an emerging glassy behavior when the competition between disorder and strong correlation is maximum.
We have studied the effects of random-hopping matrix elements and random potentials on the properties of the one-dimensional Hubbard model. Using a quantum Monte Carlo technique, disorder-averaged static spin- and charge-density susceptiblities have been evaluated for various strengths of the disorder. Results for the spin susceptibility at wave number q=2kF{\mathit{k}}_{\mathit{F}}kF​ indicate that this quantity, which is the fastest diverging susceptibility of the pure system, diverges as T\ensuremath{\rightarrow}0 also when there is randomness in the hopping matrix elements, but not in the presence of random potentials. Both types of disorder cause a divergence of the uniform magnetic susceptibility. However, for random potentials a finite critical strength of the disorder appears to be required. At half-filling the transition from Mott (gapped) to Anderson (gapless) insulating behavior has been studied. A critical disorder strength is needed to destroy the gap, in agreement with Ma's renormalization group calculations.