We investigate the metal-insulator transition in the half-filled Hubbard model on the two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique and an exact numerical diagonalization of finite clusters. Contrary to the case of a square lattice, where a perfect nesting of the Fermi surface leads to a metal-insulator transition at arbitrarily small values of U, always accompanied by antiferromagnetic ordering, on a triangular lattice, due to the lack of perfect nesting, the transition takes place at a finite value of U, and frustration induces a nontrivial competition among different magnetic phases. Indeed, within the mean-field approximation in the slave-boson approach, as the interaction grows the paramagnetic metal turns into a metallic phase with incommensurate spiral ordering. Increasing the interaction further, a linear spin-density wave is stabilized, and finally for strong coupling the latter phase undergoes a first-order transition toward an antiferromagnetic insulator. No trace of the intermediate phases is seen in the exact diagonalization results, indicating a transition between a paramagnetic metal and an antiferromagnetic insulator.
The cluster slave-spin method is employed to investigate systematically the ground state properties of the Hubbard model on a square lattice with doping $\ensuremath{\delta}$ and coupling strength
U being its parameters. At half-filling, a relation between the staggered magnetization
M and the antiferromagnetic (AFM) gap ${\mathrm{\ensuremath{\Delta}}}_{\text{AFM}}$ is established in the small
U limit to compare with that from the Hartree-Fock theory, and a first-order metal-insulator Mott transition in the paramagnetic state is substantiated, which is characterized by discontinuities and hystereses at
UMott=10t. The interaction
Uc for the crossover in the AFM state, separating the weak- and strong-coupling regimes, is found to remain almost unchanged with large dopings, and smaller than
UMott at half-filling because of long range AFM correlations. Finally, an overall phase diagram in the $U\ensuremath{-}\ensuremath{\delta}$ plane is presented, which is composed of four regimes: the AFM insulator at half-filling, the AFM metal with the compressibility $\ensuremath{\kappa}>0$ or $\ensuremath{\kappa}<0$, and the paramagnetic metal, as well as three phase transitions: (i) From the AFM metal to the paramagnetic metal, (ii) between the AFM metal phases with positive and negative $\ensuremath{\kappa}$, and (iii) separating the AFM insulating phase at $\ensuremath{\delta}=0$ from the AFM metal phase for $\ensuremath{\delta}>0$.
The cluster slave-spin method is implemented to research the ground state properties of the honeycomb lattice Hubbard model with doping $\ensuremath{\delta}$ and coupling
U being its parameters. At half filling, a single direct and continuous phase transition between the semimetal and antiferromagnetic (AFM) insulator is found at
UAFM=2.43t that is in the Gross-Neveu-Yukawa universality class, where a relation between the staggered magnetization
M and the AFM energy gap ${\mathrm{\ensuremath{\Delta}}}_{\text{AFM}}$ is established as $M\ensuremath{\propto}{\mathrm{\ensuremath{\Delta}}}_{\text{AFM}}$, compared to $M\ensuremath{\propto}{\mathrm{\ensuremath{\Delta}}}_{\text{AFM}}{(ln{\mathrm{\ensuremath{\Delta}}}_{\text{AFM}})}^{2}$ in the square lattice case. A first-order semimetal to the underlying paramagnetic (PM) insulator Mott transition is corroborated at
UMott=8.36t, which is responsible for a broad crossover around
Uc=5.4t between the weak- and strong-coupling regimes in the AFM state that increases with $\ensuremath{\delta}$, in contrast to the square lattice case. In the doped system, the compressibility $\ensuremath{\kappa}$ near the van Hove singularity at $\ensuremath{\delta}=1/4$ is suppressed substantially by the interaction before the semimetal to AFM transition occurs, whereas $\ensuremath{\kappa}$ near the Dirac points is very close to the noninteracting one, indicating that the Dirac cone structure of the energy dispersion is rather robust. An overall phase diagram in the $U\text{\ensuremath{-}}\ensuremath{\delta}$ plane is presented, consisting of four regimes: the AFM insulator at $\ensuremath{\delta}=0$ for
U>UAFM, the AFM metal with compressibility $\ensuremath{\kappa}>0$ or $\ensuremath{\kappa}<0$, and the PM semimetal; the AFM metal with $\ensuremath{\kappa}<0$ only exists in an extremely small area near the phase boundary between the AFM and PM state.
We use the Kotliar-Ruckenstein slave boson formalism to study the phase diagram of the doped antiferromagnetic Mott insulator at zero and finite temperatures. We obtain the commensurate magnetic phase diagram as a function of doping and temperature. At higher doping and temperatures we find a paramagnetic metallic phase. Reducing doping and temperature, we find antiferromagnetic phases with both metallic and insulating solutions. We calculate the electronic density of states in various regions of the phase diagram. We use our results for the electronic compressibility and magnetic susceptibility to analyze the stability of the various phases obtained within this mean field formalism. We find various parameter regimes where the method fails to provide physical solutions. We argue that those regions correspond to more exotic phases that cannot be described within the current mean field theory.