The effect of Cooperons on metal-insulator transitions (MIT) in disordered interacting electronic systems is studied. It is argued that previous results which concluded that Cooperons are qualitatively unimportant near the MIT might not be correct, and that the problem is much more complicated than had previously been realized. Although we do not completely solve the Cooperon problem, we propose a new approach that is at least internally consistent. Within this approach we find that in all universality classes where Cooperons are present, i.e. in the absence of magnetic impurities and magnetic fields, there are logarithmic corrections to scaling at the MIT. This result is used for a possible resolution of the so-called exponent puzzle for the conductivity near the MIT. A discussion of the relationship between theory and experiment is given. We also make a number of predictions concerning crossover effects which occur when a magnetic field is applied to a system with Cooperons.
The effect of Cooperons on metal-insulator transitions (MIT) in disordered interacting electronic systems is studied. It is argued that previous results which concluded that Cooperons are qualitatively unimportant near the MIT might not be correct, and that the problem is much more complicated than had previously been realized. Although we do not completely solve the Cooperon problem, we propose a new approach that is at least internally consistent. Within this approach we find that in all universality classes where Cooperons are present, i.e. in the absence of magnetic impurities and magnetic fields, there are logarithmic corrections to scaling at the MIT. This result is used for a possible resolution of the so-called exponent puzzle for the conductivity near the MIT. A discussion of the relationship between theory and experiment is given. We also make a number of predictions concerning crossover effects which occur when a magnetic field is applied to a system with Cooperons.
We study the effects of electron-electron interactions in disordered metals in and close to two dimensions (2D). We consider physical situations in which localization effects are suppressed. The field-theoretical renormalization-group (RG) calculation performed recently by Finkelstein is interpreted and rederived in terms of perturbative results. Surprisingly, except for the density of states, the scaling behavior is independent of the interaction range. We further extend the model to several new universality classes. In the presence of a strong magnetic field the metal is unstable in 2D and undergoes a metal-insulator transition in $d=2+\ensuremath{\epsilon}$. The conductivity exponent, defined by $\ensuremath{\sigma}\ensuremath{\sim}{(n\ensuremath{-}{n}_{c})}^{\ensuremath{\mu}}$, is universal with $\ensuremath{\mu}=1+O(\ensuremath{\epsilon})$ but N(EF) depends not only on the range of the interaction but also on its strength for short-ranged interactions. In 2D the conductivity has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}(2\ensuremath{-}2\mathrm{ln}2)\mathrm{ln}(T\ensuremath{\tau})$, ${\ensuremath{\sigma}}_{N}=\frac{{e}^{2}}{2{\ensuremath{\pi}}^{2}\ensuremath{\hbar}}$] if the interaction is Coulombic. If magnetic impurities (or strong spin-orbit scattering with a weak magnetic field) are present instead, the noninteracting fixed point is stable for short-ranged interactions ($\ensuremath{\mu}=\frac{1}{2}$). For the Coulomb interaction the interaction is relevant and drives a metal-insulator transition in $d=2+\ensuremath{\epsilon}$ with universal critical properties ($\ensuremath{\mu}=1$). In 2D the conductivity also has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}\mathrm{ln}(T\ensuremath{\tau})$]. We also discuss the behavior of the dielectric constant on the insulator side and the frequency (temperature) dependence of the conductivity at criticality. Remarks are made on the relationship of the above to experiments.
The interacting disordered electron problem is reviewed with emphasis on the quantum phase transitions that occur in a model system and on the field-theoretic methods used to describe them. An elementary discussion of conservation laws and diffusive dynamics is followed by a detailed derivation of the extended nonlinear sigma model, which serves as an effective field theory for the problem. A general scaling theory of metal-insulator and related transitions is developed, and explicit renormalization-group calculations for the various universality classes are reviewed and compared with experimental results. A discussion of pertinent physical ideas and phenomenological approaches to the metal-insulator transition not contained in the sigma-model approach is given, and phase-transition aspects of related problems, like disordered superconductors and the quantum Hall effect, are discussed. The review concludes with a list of open problems.
This chapter focuses on studies of the critical behavior of conductivity in two-dimensional electron systems (2DES) with different amounts and types of disorder as well as different ranges of Coulomb interactions, in order to identify possible universality classes of the 2D metal-insulator transition (MIT). It discusses the manifestations of glassiness in both low- and high-disorder samples. The chapter examines the critical region near the 2D MIT in particular on describing conductivity measurements that have demonstrated dynamical scaling, the main signature of the MIT as a quantum phase transition. It also focuses on experiments that probe the nature of the insulating state, as well as charge dynamics across the MIT, in both high- and low-disorder 2DESs. There is substantial evidence that in many materials near the MIT both strong electronic correlations and disorder play an important role, and thus their competition is expected to lead to glassy behavior of electrons, in analogy with other frustrated systems.
The problem of disordered interacting electrons is considered. We study a model for a generic disordered Fermi liquid without cooper pairs and in the absence of any spin-flip mechanisms. We prove to within logarithmic accuracy that there is a stable renormalization-group fixed point to all orders in a loop expansion. We prove that the conductivity exponent at this fixed point is identically equal to zero, while the spin-diffusion constant scales to zero with an exponent \ensuremath{\gamma}=4+O(d-2). By an explicit two-loop calculation we then show that this fixed point is suppressed by logarithmic terms, but a sizeable scaling region persists. The main conclusion is that the metal-insulator transition is preceded on the metallic side by a near instability in the spin system. There is a scaling region leading from a spin-diffusion phase to a region of very slow spin transport. Throughout this scaling region the charge transport is unaffected. Experiments are discussed in the light of these results, and further experiments to test the theory are proposed.
The metal–insulator transition (MIT) observed in a two-dimensional dilute electron liquid raises the question about the applicability of the scaling theory of disordered electrons, the approach pioneered by Phil Anderson and his collaborators,8 for the description of this transition. In this context, we review here the scaling theory of disordered electrons with electron–electron interactions. We start with the disordered Fermi liquid, and show how to adjust the microscopic Fermi-liquid theory to the presence of disorder. Then we describe the non-linear sigma model (NLSM) with interactions. This model has a direct relation with the disordered Fermi liquid, but can be more generally applicable, since it is a minimal model for disordered interacting electrons. The discussion is mostly about the general structure of the theory emphasizing the connection of the scaling parameters entering the NLSM with conservation laws. Next, we show that the MIT, as described by the NLSM with interactions, is a quantum phase transition and identify the parameters needed for the description of the kinetics and thermodynamics of the interacting liquid in the critical region of the transition. Finally, we discuss the MIT observed in Si -MOSFETs. We consider it as an example of the Anderson transition in the presence of the electron interactions. We demonstrate that the two-parameter RG equations, which treat disorder in the one-loop approximation but incorporate the full dependence on the interaction amplitudes, describe accurately the experimental data in Si -MOSFETs including the observed non-monotonic behavior of the resistance and its strong drop at low temperatures. The fact that this drop can be reproduced theoretically, together with the argument that Anderson localization should occur at strong disorder, justified the existence of the MIT within the scaling theory.
A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the so-called Anderson MIT. Here we analyze interacting particles in disordered Hubbard chains---thus comprising the Mott-Anderson physics---by investigating the ground-state entanglement with density functional theory. The localization signature on entanglement is found to be a decreasing on the entanglement degree in comparison to the clean (without interaction and disorder) case, with local minima at certain critical densities. Individually, the Mott (Anderson) MIT has a single critical density whose minimum entanglement decreases as the interaction (disorder) enhances. While in the Mott MIT entanglement saturates at finite values, characterizing partial localization, in the Anderson MIT the system reaches full localization, with zero entanglement, for sufficiently strong disorder. In the combined Mott-Anderson MIT, we find three critical densities referring to local minima on entanglement. One of them is the same as for the Anderson MIT, but now the presence of interaction requires a stronger disorder potential to induce full localization. A second critical density is related to the Mott MIT, but due to disorder it is displaced by a factor proportional to the concentration of impurities. The third local minimum on entanglement is unique to the concomitant presence of disorder and interaction, found to be related to an effective density phenomenon, thus referred to as a Mott-like MIT. Since entanglement has been intrinsically connected to the magnetic susceptibility---a quantity promptly available in cold-atom experiments---our detailed numerical description might be useful for the experimental investigation of the Mott-Anderson MIT.