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arXiv:cond-mat/0609491 · Physical Review Letters

Narrow-Band Microwave Radiation from a Biased Single-Cooper-Pair Transistor

Ofer Naaman, José Aumentado

Published May 29, 2007• 15 citations
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Abstract

We show that a single-Cooper-pair transistor (SCPT) electrometer emits narrow-band microwave radiation when biased in its subgap region. Photoexcitation of quasiparticle tunneling in a nearby SCPT is used to spectroscopically detect this radiation in a configuration that closely mimics a qubit-electrometer integrated circuit. We identify emission lines due to Josephson radiation and radiative transport processes in the electrometer and argue that a dissipative superconducting electrometer can severely disrupt the system it attempts to measure.

DOI
10.1103/physrevlett.98.227001

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We show that a single-Cooper-pair transistor (SCPT) electrometer emits narrow-band microwave radiation when biased in its subgap region. Photoexcitation of quasiparticle tunneling in a nearby SCPT is used to spectroscopically detect this radiation in a configuration that closely mimics a qubit-electrometer integrated circuit. We identify emission lines due to Josephson radiation and radiative transport processes in the electrometer and argue that a dissipative superconducting electrometer can severely disrupt the system it attempts to measure.
We measure the high-frequency emission of a single Cooper pair transistor (SCPT) in the regime where transport is only due to tunneling of Cooper pairs. This is achieved by coupling on chip the SCPT to a superconductor-insulator-superconductor junction and by measuring the photon assisted tunneling current of quasiparticles across the junction. This technique allows a direct detection of the ac Josephson effect of the SCPT and provides evidence of Landau-Zener transitions for proper gate voltage. The emission in the regime of resonant Cooper pair tunneling is also investigated. It is interpreted in terms of transitions between charge states coupled by the Josephson effect.
A single-Cooper-pair transistor (SCPT) is coupled capacitively to a voltage biased Josephson junction, used as a high-frequency generator. Thanks to the high energy of photons generated by the Josephson junction, transitions between energy levels, not limited to the first two levels, were induced and the effect of this irradiation on the dc Josephson current of the SCPT was measured. The phase and gate bias dependence of energy levels of the SCPT at high energy is probed. Because the energies of photons can be higher than the superconducting gap we can induce not only transfer of Cooper pairs but also transfer of quasiparticles through the island of the SCPT, thus controlling the poisoning of the SCPT. This can both decrease and increase the average Josephson energy of the SCPT: its supercurrent is then controlled by high-frequency irradiation.
We have calculated the I — V characteristics of voltage biased asymmetric single‐Cooper‐pair transistors (SCPT), resulting from coherent Cooper pair tunneling across both the Josephson junctions (JJ), weak dissipation due the electromagnetic environment (EE) satisfying Re[Z(ω)] ≪ RQ, and quasiparticles. Due to the asymmetry, the smaller JJ is effectively probing the macroscopic quantum states of the island. A resonance occurs whenever the energy released in a tunneling of a single, or several, Cooper pair(s) across the smaller JJ matches to the energy needed to excite the island.
We show how population inversion (PI) occurs in a two-level system (TLS) while measuring its charge using a capacitively coupled superconducting single-electron transistor (SSET), biased in the subgap regime, where the current through the SSET is carried by different cycles involving tunneling of both Cooper pairs and quasiparticles. The PI is directly associated with the resonant nature of the Cooper-pair tunneling. We also show how the SSET may strongly relax the TLS, although there is negligible current flowing through the SSET, i.e. it is turned off. The calculation of the quantum back-action noise is based on a real-time Keldysh approach. We specifically discuss the case of a Cooper Pair Box qubit with the SSET capacitively coupled as read-out device.
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In samples with relatively large charging energy Ec>EJ, where EJ is the Josephson coupling energy, two transport mechanisms were found to be dominant, both based on discrete tunneling of individual Cooper pairs: Depending on the gate voltage Vg, either sequential tunneling of pairs via the transistor island [in the conducting state of the transistor around the points Qg≡CgVg=e mod (2e), where Cg is the gate capacitance] or their cotunneling through the transistor (for Qg away of these points) was found to prevail in the net current. As the conducting state of our transistors had been found to be subject to quasiparticle poisoning, high-frequency gate cycling (at f∼1 MHz) was applied to study the sequential tunneling mechanism. A simple model based on the master equation was found to be in a good agreement with the experimental data.
The Cooper-pair tunneling in superconducting charge boxes in tunable electromagnetic environments is experimentally studied using a single-electron-transistor electrometer and via current-voltage characteristics measurement with small excitations. In the low-impedance regime, the environmental effect is quantified with an effective Josephson coupling energy, which is found to decrease as the environment impedance increases. In the high-impedance regime, the Cooper-pair tunneling is blockaded. For impedance above $250\phantom{\rule{0.3em}{0ex}}\mathrm{M}\ensuremath{\Omega}$, Coulomb oscillation of the zero-bias conductance suggests that Cooper-pair tunneling is completely suppressed and subgap quasiparticle tunneling becomes dominant.