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arXiv:cond-mat/0607262

Extreme Nonlinear Phenomena in NbN Superconducting Stripline Resonators

Eran Segev, Baleegh Abdo, Oleg Shtempluck, Eyal Buks

Published Jul 11, 2006• 1 citation
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Abstract

We study a microwave superconducting stripline resonator made of NbN on a Sapphire wafer. Novel, self-sustained modulation of the reflected power off the resonator, at frequencies of up to 60MHz, has been recently reported. Here we show experimentally that near the self modulation threshold, the device exhibits a giant nonlinearity, which manifests itself in an extremely high intermodulation gain, accompanied by a very strong noise squeezing and period doubling of various orders. Such a device is highly suitable for serving as a readout device in quantum data processing systems.

DOI
10.48550/arxiv.cond-mat/0607262

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We study a microwave superconducting stripline resonator made of NbN on a Sapphire wafer. Novel, self-sustained modulation of the reflected power off the resonator, at frequencies of up to 60MHz, has been recently reported. Here we show experimentally that near the self modulation threshold, the device exhibits a giant nonlinearity, which manifests itself in an extremely high intermodulation gain, accompanied by a very strong noise squeezing and period doubling of various orders. Such a device is highly suitable for serving as a readout device in quantum data processing systems.
We study theoretically and experimentally the response of a microwave superconducting stripline resonator, integrated with a microbridge, to a monochromatic injected signal. We find that there is a certain range of driving parameters in which a novel nonlinear phenomenon emerges, and self-sustained modulation of the reflected power off the resonator is generated by the resonator. A theoretical model which attributes the self-modulation to a thermal instability yields a good agreement with the experimental results.
We study theoretically and experimentally the response of a microwave superconducting stripline resonator, integrated with a microbridge, to a monochromatic injected signal. We find that there is a certain range of driving parameters, in which a novel nonlinear phenomenon immerges, and self-sustained modulation of the reflected power off the resonator is generated by the resonator. A theoretical model which attributes the self modulation to a thermal instability yields a good agreement with the experimental results.
We study a microwave superconducting stripline resonator made of NbN on a sapphire substrate. A radiation detector (RD) having a thin meander shape is integrated into the resonator. We harness an extremely strong nonlinear instability occurring in the device in order to enhance its sensitivity to infrared radiation impinging on the RD. Characterization measurements yield a noise equivalent power of 34 fW/radicHz at a modulation frequency of 7.74 GHz. Such a device may be exploited for fast and sensitive radiation detection.
We study thermal instability in a driven superconducting NbN stripline resonator integrated with a microbridge. A monochromatic input drive is injected into the resonator and the response is measured as a function of the frequency and amplitude of the drive. Inside a certain zone of the frequency-amplitude plane the system has no steady state, and consequently self-sustained modulation of the reflected power off the resonator is generated. A theoretical model, according to which the instability originates by a hotspot forming in the microbridge, exhibits a good quantitative agreement with the experimental results.
The issue of intermodulation distortion in superconducting devices for rf and microwave applications is discussed. The classical frequency conversion theory for nonlinear two-port devices in the small signal limit is shown to apply to microstrip resonators regardless of their geometry and material. Two tone, third order intermodulation measurements allow more sensitive detection of nonlinearity compared to surface impedance measurements, provided a low noise, spurious free experimental setup is adopted. Measurements carried out on high quality Nb meanderline microstrip resonators show that at very low power level nonlinearity is dominated by intrinsic device properties. Film defects start to play a predominant role above a critical power level that strongly depends on the defect’s nature.