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arXiv:cond-mat/0604097 · Applied Physics Letters

High quality ferromagnetic 0 and π Josephson tunnel junctions

Martin P. Weides, M. Kemmler, E. Goldobin, D. Koelle, R. Kleiner, H. Kohlstedt, A. I. Buzdin

Published Sep 18, 2006• 135 citations
arXivHTMLPDF

Abstract

The authors fabricated high quality Nb∕Al2O3∕Ni0.6Cu0.4∕Nb superconductor-insulatorferromagnet-superconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic Ni0.6Cu0.4 layer and on the ambient temperature, the junctions were in the 0 or π ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The Al2O3 tunnel barrier allows one to achieve rather low damping, which is desired for many experiments especially in the quantum domain. The McCumber parameter βc increases exponentially with decreasing temperature and reaches βc≈700 at T=2.11K. The critical current density in the π state was up to 5A∕cm2 at T=2.11K, resulting in a Josephson penetration depth λJ as low as 160μm. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the Ni0.6Cu0.4 layer and different transparencies of the interfaces.

DOI
10.1063/1.2356104

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The authors fabricated high quality Nb∕Al2O3∕Ni0.6Cu0.4∕Nb superconductor-insulatorferromagnet-superconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic Ni0.6Cu0.4 layer and on the ambient temperature, the junctions were in the 0 or π ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The Al2O3 tunnel barrier allows one to achieve rather low damping, which is desired for many experiments especially in the quantum domain. The McCumber parameter βc increases exponentially with decreasing temperature and reaches βc≈700 at T=2.11K. The critical current density in the π state was up to 5A∕cm2 at T=2.11K, resulting in a Josephson penetration depth λJ as low as 160μm. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the Ni0.6Cu0.4 layer and different transparencies of the interfaces.
We present experimental studies of high quality underdamped 0, pi, and 0-pi ferromagnetic Josephson tunnel junctions of intermediate length L (lambda_J < L < 5 lambda_J, where lambda_J is the Josephson penetration depth). The junctions are fabricated as Nb/Al_2O_3/Cu_40Ni_60/Nb Superconductor-Insulator-Ferromagnet-Superconductor heterostructures. Using microwave spectroscopy, we have investigated the eigenfrequencies of 0, pi, and 0-pi Josephson junctions in the temperature range 1.9K...320mK. Harmonic, subharmonic and superharmonic pumping is observed in experiment, and the experimental data are compared with numerical simulations. Escape rate measurements without applied microwaves at temperatures T down to 20mK show that the width of the switching current histogram decreases with temperature and saturates below T=150mK. We analyze our data in the framework of the short junction model. The differences between experimental data and theoretical predictions are discussed.
We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlOx/PdNi/Nb) π-Josephson junctions. An analysis of Fiske modes up to about 400 GHz provides information on the junction quality factor and the relevant damping mechanisms. High quality factors of up to 30 around 200 GHz have been achieved. They allow for the study of the dynamic properties of the junctions, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. At mK temperature, the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with ferromagnetic interlayer.
Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of Pi between the electrodes, so they are also known as Pi-junctions. Both studies go well beyond existing experiments and in one system a Pi-junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of Pi-junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb | AlOx | Nb | Ni60Cu40 | Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of jc and IcRn by the s-layer thickness up to the value of nonmagnetic SIS junctions is notable. Additionally information on the emergence of superconductivity with the s-layer thickness was acquired.
A description of the fabrication technology of high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors Vg=3.2-3.4 mV, tunnel current density up to J 35 kA/cm2, quality factor Rj/Rn (ratio of subgap resistance to normal-state resistance) up to 30, junction area up to 1 μm2. The SIS junctions are integrated into the NbTiN|SiO2|Al microstrip line. Keywords: superconducting devices, superconductor--insulator--superconductor tunnel junction, plasma etching.
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor-ferromagnet-superconductor (SFS) heterostructures, as either spintronic devices or switchable elements in quantum and classical circuits. Recent experimental evidence of macroscopic quantum tunneling and of an incomplete 0-$\ensuremath{\pi}$ transition in tunnel-ferromagnetic spin-filter JJs could also enhance the capabilities of SFS JJs as active elements. Here, we provide a self-consistent electrodynamic characterization of NbN\mathrm{Nb}\mathrm{N}NbN/GdN\mathrm{Gd}\mathrm{N}GdN/NbN\mathrm{Nb}\mathrm{N}NbN spin-filter JJs as a function of the barrier thickness, disentangling the high-frequency dissipation effects due to the environment from the intrinsic low-frequency dissipation processes. The fitting of the III-VVV characteristics at 4.2 K and at 300 mK by using the tunnel-junction-microscopic model allows us to determine the subgap resistance Rsg{R}_{\mathrm{sg}}Rsg​, the quality factor QQQ, and the junction capacitance CCC. These results provide the scaling behavior of the electrodynamic parameters as a function of the barrier thickness, which represents a fundamental step for the feasibility of tunnel-ferromagnetic JJs as active elements in quantum and classical circuits, and are of general interest for tunnel junctions other than conventional SIS JJs.