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arXiv:cond-mat/0504012 · Physical Review Letters

Coherent Population Trapping of Electron Spins in a High-Purity n -Type GaAs Semiconductor

Kai‐Mei C. Fu, Charles Santori, Colin R Stanley, Martin C. Holland, Y. Yamamoto

Published Oct 27, 2005• 87 citations
arXivHTMLPDF

Abstract

In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.

DOI
10.1103/physrevlett.95.187405

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