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arXiv:cond-mat/0411696 · Physical Review Letters

Dynamical Breakup of the Fermi Surface in a Doped Mott Insulator

Marcello Civelli, Massimo Capone, S. S. Kancharla, Olivier Parcollet, Gabriel Kotliar

Published Sep 2, 2005• 190 citations
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Abstract

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the cellular dynamical mean-field theory. We show that approaching the density-driven Mott metal-insulator transition the Fermi surface is strongly renormalized and the quasiparticle description breaks down in a very anisotropic fashion. Regions where the quasiparticles are strongly scattered (hot spots) and regions where the scattering rate is relatively weak (cold spot) form irrespective of whether the parent insulator has antiferromagnetic long-range order, while their location is not universal and is determined by the interplay of the renormalization of the scattering rate and the Fermi surface shape.

DOI
10.1103/physrevlett.95.106402

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The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the cellular dynamical mean-field theory. We show that approaching the density-driven Mott metal-insulator transition the Fermi surface is strongly renormalized and the quasiparticle description breaks down in a very anisotropic fashion. Regions where the quasiparticles are strongly scattered (hot spots) and regions where the scattering rate is relatively weak (cold spot) form irrespective of whether the parent insulator has antiferromagnetic long-range order, while their location is not universal and is determined by the interplay of the renormalization of the scattering rate and the Fermi surface shape.
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we solve the cellular dynamical mean-field equations for the two-dimensional Hubbard model using a plaquette as the reference quantum impurity model and continuous-time quantum Monte Carlo method as impurity solver. The normal-state phase diagram as a function of interaction strength UUU, temperature TTT, and filling nnn shows that, upon increasing nnn toward the Mott insulator, there is a surface of first-order transition between two metals at nonzero doping. That surface ends at a finite temperature critical line originating at the half-filled Mott critical point. Associated with this transition, there is a maximum in scattering rate as well as thermodynamic signatures. These findings suggest a new scenario for the normal-state phase diagram of the high temperature superconductors. The criticality surmised in these systems can originate not from a T === 0 quantum critical point, nor from the proximity of a long-range ordered phase, but from a low temperature transition between two types of metals at finite doping. The influence of Mott physics therefore extends well beyond half-filling.
We investigate the Mott transition in weakly coupled one-dimensional (1D) fermionic chains. Using a generalization of dynamical mean field theory, we show that the Mott gap is suppressed at some critical hopping t{ perpendicular}{c2}. The transition from the 1D insulator to a 2D metal proceeds through an intermediate phase where the Fermi surface is broken into electron and hole pockets. The quasiparticle spectral weight is strongly anisotropic along the Fermi surface, both in the intermediate and metallic phases. We argue that such pockets would look like "arcs" in photoemission experiments.
We study the relationship between the pseudogap and Fermi-surface topology in the two-dimensional Hubbard model by means of the cellular dynamical mean-field theory. We find two possible mean-field metallic solutions on a broad range of interactions, doping, and frustration: a conventional renormalized metal and an unconventional pseudogap metal. At half filling, the conventional metal is more stable and displays an interaction-driven Mott metal-insulator transition. However, for large interactions and small doping, a region that is relevant for cuprates, the pseudogap phase becomes the ground state. By increasing doping, we show that a first-order transition from the pseudogap to the conventional metal is tied to a change of the Fermi surface from hole- to electronlike, unveiling a correlation-driven mechanism for a Lifshitz transition. This explains the puzzling link between the pseudogap phase and Fermi surface topology that has been pointed out in recent experiments.
The charge ordering transition induced by the nearest-neighbor Coulomb repulsion V in the 1/4-filled extended Hubbard model is investigated using cellular dynamical mean-field theory. We find a transition to a strongly renormalized charge ordered Fermi liquid at V(CO) and a metal-to-insulator transition at V(MI)>V(CO). Short range antiferromagnetism occurs concomitantly with the CO transition. Approaching the charge ordered insulator, V approximately <V(MI), the Fermi surface deforms and the scattering rate of electrons develops momentum dependence on the Fermi surface.
We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a ``bad metal'' state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the charge compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order N\'eel line.
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cellular dynamical mean-field equations for the Hubbard model on a plaquette with continuous-time quantum Monte Carlo calculations. The normal-state phase diagram as a function of temperature T, interaction strength U, and filling n reveals that upon increasing n towards the insulator, there is a surface of first-order transition between two metals at nonzero doping. For T above the critical end line there is a maximum in scattering rate.