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arXiv:cond-mat/0402332 · Solid State Communications

Resonant tunnelling in interacting 1D systems with an AC modulated gate

A. Komnik, Alexander O. Gogolin

Published Jun 11, 2004• 1 citation
arXivHTMLPDF
DOI
10.1016/j.ssc.2004.05.021

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We investigate the effects of a time-dependent gate voltage on a spin–orbit interaction (SOI) coupled interacting double quantum dot (DQD) system. For a tunnel coupled detuned DQD with two interacting electrons, SOI couples triplet T0 and hybridised singlet state (1,1)–(0,2) through spin nonconserving transition. In order to explore the effects of Ac gate voltage on charge localisation, we initiate the system in the vicinity of the singlet–triplet avoided crossing and investigate the interplay of the Ac gate voltage and SOI on the charge and spin dynamics of the system. We show that the triplet state (1,1) charge configuration can be frozen by tuning the Ac frequency leading to charge localisation and dynamical spin locking with a redefined spin–orbit field in terms of gate voltage.
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