A solid-state quantum computer with dipolar coupling between qubits is proposed. The qubits are formed by the low-lying states of an isolated acceptor in silicon. The system has the scalability inherent to spin-based solid state systems, but the spatial separation between the qubits is an order of magnitude larger. Despite strong dipolar inter-qubit coupling, the decoherence rate, as measured by electric dipolar echoes at an energy splitting of 1.5 GHz, is less than 1 kHz at low temperatures. For inter-acceptor distances of 100 nm and for modest microwave field amplitudes (50 V/cm) the clock frequency of the quantum computer is 0.1 GHz, which yields a quality factor of 105. This paper describes ideas for detection and operation of the quantum computer, and examines limitations imposed by noise sources.
A solid-state quantum computer with dipolar coupling between qubits is proposed. The qubits are formed by the low-lying states of an isolated acceptor in silicon. The system has the scalability inherent to spin-based solid state systems, but the spatial separation between the qubits is an order of magnitude larger. Despite strong dipolar inter-qubit coupling, the decoherence rate, as measured by electric dipolar echoes at an energy splitting of 1.5 GHz, is less than 1 kHz at low temperatures. For inter-acceptor distances of 100 nm and for modest microwave field amplitudes (50 V/cm) the clock frequency of the quantum computer is 0.1 GHz, which yields a quality factor of 105. This paper describes ideas for detection and operation of the quantum computer, and examines limitations imposed by noise sources.
Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.Quantum computers will require a large network of coherent qubits, connected in a noise-resilient way. Tosi et al. present a design for a quantum processor based on electron-nuclear spins in silicon, with electrical control and coupling schemes that simplify qubit fabrication and operation.
Dielectric constant and absorption measurements on boron-doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant AC electric field and the Stark tuning of level spacing with an external DC electric field. The relatively longer decoherence times, T 2 =2.6 μs and T 1 =7.4 μs, were observed by the electric echo measurement in a low boron dopant concentration Si sample (8×10 −12 cm −3 ). The scalable acceptor-based system is a promising candidate of the charge qubit for quantum computing.
The qubit-qubit dipolar interaction arises with the very presence of the nuclear qubits in an all-silicon quantum computer (ASQC). Since such interaction depends on the qubit spatial separation noise is induced on entanglement through a damping contribution to the density matrix. A closed condition of "robustness" against decoherence is found. The term "robustness" is define unambiguosly. The existence of at least two exceptional coherent states is infered. The preparation of such states is within the range of present technological capabilities. Thus, the harmful effects of decoherence coming from the dipolar interaction can be diminished considerably. An approximate condition against decoherence, to leading order in 1/(qubit separation)[3], is derived. By expanding the time evolution operator in a series of Chebyshev polynomials an approximated expression for the density matrix, whose precision is of order 10-4, is also found. From this expression, a next-to-leading order approximation for the condition of robustness against decoherence is derived.
Quantum computing holds the promise to solve many of today's intractable problems. A solid-state quantum computer (QC) is generally made of an array of qubits implemented in one of many solid-state technologies and operating at deep-cryogenic temperatures (10-to-20mK). Silicon spin qubits are a promising candidate for scalable QCs, due to their size, long coherence times and potential for co-integration with the required classical control and readout electronics. Recently, semiconductor spin qubits have been demonstrated to operate at ~1K, thus accelerating the achievement of a compact QC [1]. Classical qubit control electronics has also progressed, with the demonstration of fully-integrated control of spin qubits [2] and transmons [3] implemented in a cryo-CMOS technology. While a cryo-CMOS integrated circuit has been co-integrated with quantum dots [4], fully-integrated readout electronics has not yet been addressed in the literature.
Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important solid-state quantum computer designs operating at low temperatures. We calculate the relaxation rate 1/T1 as a function of [100] uniaxial strain, temperature, magnetic field, and silicon/germanium content for Si:P bound electrons and quantum dots. The quantum dot potential is much smoother, leading to smaller splittings of the valley degeneracies. We have estimated these splittings in order to obtain upper bounds for the relaxation rate. In general, we find that the relaxation rate is strongly decreased by uniaxial compressive strain in a SiGe-Si-SiGe quantum well, making this strain an important positive design feature. Ge in high concentrations (particularly over 85%) increases the rate, making Si-rich materials preferable. We conclude that SiGe bound electron qubits must meet certain conditions to minimize decoherence but that spin-phonon relaxation does not rule out the solid-state implementation of error-tolerant quantum computing.
Quantum computing promises to revolutionize our lives, achieving unprecedented computational powers and unlocking new possibilities in drug discovery, chemical simulations and cryptography. The fundamental unit of computation of a quantum computer is the quantum bit (qubit). It can be implemented in a number of technologies, such as superconducting qubits, spin qubits, photonic systems, trapped ions and NV-centers. Solid-state superconducting qubits and spin qubits seem to be the most promising ones, as shown by the recent demonstration of quantum supremacy with a superconducting qubit processor. Such quantum processors, to operate in the quantum regime, require very low temperatures around 10 mK, and they are hence kept inside dilution fridges. The electronics required to read out and control such processors is typically realized by discrete components or bulky scientific instruments at room temperature wired into the dilution fridge. Such approach is only feasible until few (< 100) qubits are handled, but it is not scalable for million-qubit processors required for fault-tolerant operation. In this thesis, readout and control electronics is proposed to be integrated and operated directly at cryogenic temperatures, in close proximity with the qubits and potentially even co-integrated. CMOS technology is advocated for its scalability, compactness and low prototyping cost, to create a comprehensive cryo-CMOS class of fully-integrated transceivers to read out and control solid-state qubits. In particular, the thesis focuses on cryo-CMOS radio-frequency integrated circuits for the readout of silicon quantum computers, looking to integrate the whole readout system, from the quantum layer to the room temperature user interface. Cryogenic CMOS devices are explored first, to lay the foundations of integrated circuit design. The realization of quantum dots in standard CMOS technology is explored as a platform to realize solid-state qubit arrays, demonstrating functionality at 50 mK and good reproducibility. Moreover, the operation of integrated transistors at 50 mK and 4.2 K is explored to understand their basic cryogenic functionality, through characterization and modeling. Then also integrated passives, such as capacitors, inductors and transformers, are studied and modeled at cryogenic temperatures. Then, a fully-integrated readout platform spanning across all the blocks needed for dispersive readout is proposed. A fully-integrated matrix of quantum dots with radio-frequency gate-based readout capabilities is demonstrated along with time- and frequency-multiplexing. This quantum-classical circuit shows all the features for a scalable approach and is the core of the platform following it. A cryogenic CMOS circulator based on a new all-pass filter architecture is demonstrated, to be used as integrated replacement for current bulky counterparts; it allows power reduction, insertion loss and bandwidth enhancement with respect to state-of-the-art integrated circulators. The rest of the front-end is also explored with dedicated test multiplexers, a low noise-amplifier and an oscillator, that are finally merged in a single fully-integrated low-noise receiver with frequency synthesizer operating at 3.5 K for scalable multiplexed readout of silicon qubits. The platform presented in this thesis, across temperature boundaries, carries all the features required for future scalable silicon quantum computing platforms and could therefore form their core.