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arXiv:cond-mat/0301623 · Physical review. B, Condensed matter

Delocalizing effect of the Hubbard repulsion for electrons on a two-dimensional disordered lattice

Bhargavi Srinivasan, Giuliano Benenti, Dima L. Shepelyansky

Published May 30, 2003• 31 citations
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Abstract

We study numerically the ground-state properties of the repulsive Hubbard model for spin-1/2 electrons on two-dimensional lattices with disordered on-site energies. The projector quantum Monte Carlo method is used to obtain very accurate values of the ground-state charge density distributions with ${N}_{p}$ and ${N}_{p}+1$ particles. The difference in these charge densities allows us to study the localization properties of an added particle. The results obtained at quarter filling on finite clusters show that the Hubbard repulsion has a strong delocalizing effect on the electrons in disordered two-dimensional lattices. However, numerical restrictions do not allow us to reach a definite conclusion about the existence of a metal-insulator transition in the thermodynamic limit in two dimensions.

DOI
10.1103/physrevb.67.205112

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We study the ground state of the two-dimensional (2D) disordered Hubbard model by means of the projector quantum Monte Carlo (PQMC) method. This approach allows us to investigate the ground state properties of this model for lattice sizes up to 10×1010 \times 1010×10, at quarter filling, for a broad range of interaction and disorder strengths. Our results show that the ground state of this system of spin-1/2 fermions remains localised in the presence of the short-ranged Hubbard interaction.
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We study the effect of disorder and doping on the metal-insulator transition in a repulsive Hubbard model on a square lattice using the determinant quantum Monte Carlo method. First, with the aim of making our results reliable, we compute the sign problem with various parameters such as temperature, disorder, on-site interactions, and lattice size. We show that in the presence of randomness in the hopping elements, the metal-insulator transition occurs and the critical disorder strength differs at different fillings. We also demonstrate that doping is a driving force behind the metal-insulator transition.
Exact-diagonalization and quantum Monte Carlo methods are used to study the occurrence of a metal-insulator transition and the distribution of charges and magnetic moments in the ground state of a one- and two-dimensional half-filled system of correlated electrons, described by a one-band simplified Hubbard model extended with bond-charge--site-charge interactions. Numerical results for the electrical conductivity, the density of states, and the spin- and charge-density correlation functions strongly suggest that the bond-charge--site-charge interaction plays a fundamental role in the occurrence of a metal-insulator transition and of ferromagnetic order.