Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and $t--J$ -like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is, in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and $t--J$-like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is, in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.

arXiv:1801.03709Physical review. B./Physical review. BMar 12, 201813 citations

High harmonic generation in two-dimensional Mott insulators

Christopher Orthodoxou, A. Zaïr, George H. Booth

Abstract With a combination of numerical methods, including quantum Monte Carlo, exact diagonalization, and a simplified dynamical mean-field model, we consider the attosecond charge dynamics of electrons induced by strong-field laser pulses in two-dimensional Mott insulators. The necessity to go beyond single-particle approaches in these strongly correlated systems has made the simulation of two-dimensional extended materials challenging, and we contrast their resulting high-harmonic emission with more widely studied one-dimensional analogues. As well as considering the photo-induced breakdown of the Mott insulating state and magnetic order, we also resolve the time and ultra-high-frequency domains of emission, which are used to characterize both the photo-transition, and the sub-cycle structure of the electron dynamics. This extends simulation capabilities and understanding of the photo-melting of these Mott insulators in two dimensions, at the frontier of attosecond non-equilibrium science of correlated materials.Abstract With a combination of numerical methods, including quantum Monte Carlo, exact diagonalization, and a simplified dynamical mean-field model, we consider the attosecond charge dynamics of electrons induced by strong-field laser pulses in two-dimensional Mott insulators. The necessity to go beyond single-particle approaches in these strongly correlated systems has made the simulation of two-dimensional extended materials challenging, and we contrast their resulting high-harmonic emission with more widely studied one-dimensional analogues. As well as considering the photo-induced breakdown of the Mott insulating state and magnetic order, we also resolve the time and ultra-high-frequency domains of emission, which are used to characterize both the photo-transition, and the sub-cycle structure of the electron dynamics. This extends simulation capabilities and understanding of the photo-melting of these Mott insulators in two dimensions, at the frontier of attosecond non-equilibrium science of correlated materials.

arXiv:2103.13708npj Quantum MaterialsSep 9, 20211 citation

Theory of Mott Insulators

B. H. Brandow

NATO ASI series. Series B : PhysicsJan 1, 19882 citations

Effect of Electron-Phonon Interaction on Optical Properties in One-Dimensional Mott Insulators

Takami Tohyama, Hiroaki Matsueda

Interplay of strong electron correlation and electron-phonon interaction is one of important issues in the physics of low dimensional correlated electron systems. In order to understand the interplay, we examine the optical properties of the one-dimensional (1D) Hubbard-Holstein model at half-filling, by employing the dynamical density matrix renormalization group (DMRG) technique. We discuss the effect of the electron-phonon interaction on the single-particle spectral function and the optical absorption spectrum. The dynamical DMRG data are compared with experimental data of 1D copper oxide Mott insulators.Interplay of strong electron correlation and electron-phonon interaction is one of important issues in the physics of low dimensional correlated electron systems. In order to understand the interplay, we examine the optical properties of the one-dimensional (1D) Hubbard-Holstein model at half-filling, by employing the dynamical density matrix renormalization group (DMRG) technique. We discuss the effect of the electron-phonon interaction on the single-particle spectral function and the optical absorption spectrum. The dynamical DMRG data are compared with experimental data of 1D copper oxide Mott insulators.

Progress of Theoretical Physics SupplementJan 1, 20081 citation

t--J

-like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is, in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.