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arXiv:cond-mat/0205091 · The European Physical Journal B

Similarities between the t-J and Hubbard models in weakly correlated regimes

Marie-Bernadette Lepetit, Marie‐Liesse Doublet, Ph. Maurel

Published Jul 1, 2002• 2 citations
arXivHTMLPDF
DOI
10.1140/epjb/e2002-00198-5

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The hole-hole correlation function in the 2D Hubbard model is investigated in the low doping regime both via Monte Carlo simulations for U=4 and Lanczos diagonalization on a 16 site cluster for very large U. The results are compared with available theoretical predictions for the strong coupling limit. There is a clear short range repulsion, but no signature of hole-hole attraction is found in either case. At U=4 correlations are still remarkably weak-coupling-like. For large U, they become rather similar to those of hard core bosons.
We investigate the staggered correlation of the on-site pairs, the so-called $\ensuremath{\eta}$-pairing correlation, induced by pump electric fields in the Hubbard model on the ladder lattice. Employing the time-evolution method based on exact diagonalization, we compute the photoinduced $\ensuremath{\eta}$-pairing correlation with different strengths of the interchain hopping. When the pump field is polarized along the chain direction, the $\ensuremath{\eta}$-pairing correlation is noticeably induced in the weakly coupled double-chain region, where the pairing property is similar to the $\ensuremath{\eta}$ pairing in the single-chain Hubbard model. On the other hand, the pump field polarized along the rung direction prominently induces the $\ensuremath{\eta}$-pairing correlation in the strong interchain coupling regime, where the pair correlations developing across rungs strongly contribute to the $\ensuremath{\eta}$ pairing. Based on the local rung approximation, which is valid in the strong interchain coupling regime, we discuss the origin of the photoinduced pair.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.