Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:cond-mat/0106311 · Physical review. B, Condensed matter

Electronic states in the antiferromagnetic phase of electron-doped high- Tc cuprates

Takami Tohyama, Sadamichi Maekawa

Published Nov 12, 2001• 56 citations
arXivHTMLPDF

Abstract

We investigate the electronic states in the antiferromagnetic (AF) phase of electron-doped cuprates by using numerically exact diagonalization technique for a $t\ensuremath{-}{t}^{\ensuremath{'}}\ensuremath{-}{t}^{\ensuremath{''}}\ensuremath{-}J$ model. When AF correlation develops with decreasing temperature, a gaplike behavior emerges in the optical conductivity. Simultaneously, the coherent motion of carriers due to the same sublattice hoppings is enhanced. We propose that the phase is characterized as an AF state with small Fermi surface around the momentum $\mathbf{k}=(\ensuremath{\pi},0)$ and $(0,\ensuremath{\pi}).$ This is a remarkable contrast to the behavior of hole-doped cuprates.

DOI
10.1103/physrevb.64.212505

Related papers

Asymmetry of the electronic states in hole- and electron-doped cuprates: Exact diagonalization study of the t-t′-t″-J model

Takami Tohyama

We systematically examine the asymmetry of the electronic states in the hole- and electron-doped cuprates by using a $t\text{\ensuremath{-}}J$ model with the second-neighbor hopping ${t}^{\ensuremath{'}}$ and third one ${t}^{\ensuremath{''}}$ (the $t\text{\ensuremath{-}}{t}^{\ensuremath{'}}\text{\ensuremath{-}}{t}^{\ensuremath{''}}\text{\ensuremath{-}}J$ model). Numerically exact diagonalization method is employed for a 20-site square lattice. We impose twisted boundary conditions (BC) instead of standard periodic BC. For static and dynamical correlation functions, averaging procedure over the twisted BC is used to reduce the finite-size effect. We find that antiferromagnetic spin correlation remains strong in electron doping in contrast to the case of hole doping, being similar to the case of the periodic BC. This leads to a remarkable electron-hole asymmetry in the dynamical spin structure factor and two-magnon Raman scattering. By changing the twist, the single-particle spectral function is obtained for all momenta in the Brillouin zone. Examining the spectral function in detail, we find a gap opening at around the $\mathbf{k}=(\ensuremath{\pi},0)$ region for 10% doping of holes (the carrier concentration $x=0.1$), leading to a Fermi arc that is consistent with experiments. In electron doping, however, a gap opens at around $\mathbf{k}=(\ensuremath{\pi}∕2,\ensuremath{\pi}∕2)$ and persists up to $x=0.2$, being correlated with the strength of the antiferromagnetic correlation. We find that the magnitude of the gaps is sensitive to ${t}^{\ensuremath{'}}$ and ${t}^{\ensuremath{''}}$. A pseudogap is also seen in the optical conductivity for electron doping, and its magnitude is found to be the same as that in the spectral function. We compare calculated quantities with corresponding experimental data, and discuss similarities and differences between them as well as their implications.

arXiv:cond-mat/0406041•Physical Review B•Nov 1, 2004•114 citations

Role of next-nearest-neighbor hopping in thet-t’-Jmodel

Takami Tohyama, Sadamichi Maekawa

A next-nearest-neighbor hopping t' in the t-t'-J model has a different sign between the hole- and electron-doped systems of high-${\mathit{T}}_{\mathit{c}}$ cuprates: t'0 for the hole-doped system and t'>0 for the electron-doped system. We show that the sign is responsible for the remarkable difference of antiferromagnetic (AF) phases between the two systems. To reveal this and clarify the role of t', we examine magnetic excitations of the t-t'-J model by employing exact diagonalization techniques for 4\ifmmode\times\else\texttimes\fi{}4 and \ensuremath{\surd}18 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}18 lattices. In the low-doping region (two-hole case of the \ensuremath{\surd}18 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}18 lattice), AF spin correlations are stabilized for the case of t'>0, i.e., electron-doping case, but not for the case of t'0. In the high-doping region (four-hole case of the 4\ifmmode\times\else\texttimes\fi{}4 lattice and more) magnetic excitations are mainly controlled by the geometry of the Fermi surface of the noninteracting system.

Physical review. B, Condensed matter•Feb 1, 1994•167 citations

Electron-hole asymmetry in high-Tc cuprates from theoretical viewpoints

Takami Tohyama

Asymmetric features of various physical quantities in the normal and superconducting states between hole- and electron-doped cuprate high-temperature superconductors have been an issue of debate for a long time. Their exploration is very important for the understanding not only of the mechanism of high-Tc superconductivity but also of the nature of doped-Mott insulators. Presented in this review is the present status of theoretical understanding of the electronic states in hole- and electron-doped high- Tc cuprates as well as the origin of the electron-hole asymmetry of the electronic states. In particular, it is shown that numerically exact diagonalization calculations for small clusters in a t-J model with long-range hoppings, t and t nicely reproduce the electron-hole asymmetry observed experimentally in various quantities and thus make it possible to extract the physical origin of the asymmetry. These results give a deep insight on the asymmetric behaviors in hole- and electron-doped high-Tc cuprates and on the nature of doped Mott insulators.

•Sep 1, 2006•0 citations

NUMERICAL STUDY OF THE ELECTRONIC STATES IN HOLE- AND ELECTRON-DOPED HIGH-TC CUPRATES

Takami Tohyama

We examine the electronic states in the hole- and electron-doped cuprates by using the t-t′-t″-J model. Numerically exact diagonalization method is employed for a 20-site square lattice under twisted boundary conditions. The density of states in the underdoped region clearly shows a pseudogap behavior near the Fermi level in both hole and electron dopings. In hole doping, the edge of the pseudogap in the occupied side exhibits a large weight that comes from a flat band near k=(π,0). In contrast, the weight near the gap edge in electron doping is larger for the unoccupied side than for the occupied side.

International Journal of Modern Physics B•Jan 30, 2005•0 citations

Antiferromagnetic to superconducting phase transition in the hole- and electron-doped Hubbard model at zero temperature

Markus Aichhorn, Enrico Arrigoni, Michael Potthoff +1 more

The competition between $d$-wave superconductivity (SC) and antiferromagnetism (AF) in the high-${T}_{c}$ cuprates is investigated by studying the hole- and electron-doped two-dimensional Hubbard model with a recently proposed variational quantum-cluster theory. The approach is shown to provide a thermodynamically consistent determination of the particle number, provided that an overall shift of the on-site energies is treated as a variational parameter. The consequences for the single-particle excitation spectra and for the phase diagram are explored. By comparing the single-particle spectra with quantum Monte Carlo and experimental data, we verify that the low-energy excitations in a strongly correlated electronic system are described appropriately. The cluster calculations also reproduce the overall ground-state phase diagram of the high-temperature superconductors. In particular, they include salient features such as the enhanced robustness of the antiferromagnetic state as a function of electron doping and the tendency towards phase separation into a mixed antiferromagnetic-superconducting phase at low doping and a pure superconducting phase at high (both hole and electron) doping.

arXiv:cond-mat/0511460•Physical Review B•Jul 13, 2006•154 citations

Charge carrier correlation in the electron-doped t−J model

P. W. Leung

We study the $t\text{\ensuremath{-}}{t}^{\ensuremath{'}}\text{\ensuremath{-}}{t}^{\ensuremath{''}}\text{\ensuremath{-}}J$ model with parameters chosen to model an electron-doped high-temperature superconductor. The model with one, two, and four charge carriers is solved on a 32-site lattice using exact diagonalization. Our results demonstrate that at doping levels up to $x=0.125$ the model possesses robust antiferromagnetic correlation. When doped with one charge carrier, the ground state has momenta $(\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi},0)$ and $(0,\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi})$. On further doping, charge carriers are unbound and the momentum distribution function can be constructed from that of the single-carrier ground state. The Fermi surface resembles that of small pockets at single-charge-carrier ground-state momenta, which is the expected result in a lightly doped antiferromagnet. This feature persists upon doping up to the largest doping level we achieved. We therefore do not observe the Fermi surface changing shape at doping levels up to 0.125.

arXiv:cond-mat/0508035•Physical Review B•Feb 2, 2006•4 citations
We investigate the electronic states in the antiferromagnetic (AF) phase of electron-doped cuprates by using numerically exact diagonalization technique for a t\ensuremath−t\ensuremath′\ensuremath−t\ensuremath′′\ensuremath−Jt\ensuremath{-}{t}^{\ensuremath{'}}\ensuremath{-}{t}^{\ensuremath{''}}\ensuremath{-}Jt\ensuremath−t\ensuremath′\ensuremath−t\ensuremath′′\ensuremath−J model. When AF correlation develops with decreasing temperature, a gaplike behavior emerges in the optical conductivity. Simultaneously, the coherent motion of carriers due to the same sublattice hoppings is enhanced. We propose that the phase is characterized as an AF state with small Fermi surface around the momentum k=(\ensuremathπ,0)\mathbf{k}=(\ensuremath{\pi},0)k=(\ensuremathπ,0) and (0,\ensuremathπ).(0,\ensuremath{\pi}).(0,\ensuremathπ). This is a remarkable contrast to the behavior of hole-doped cuprates.
We systematically examine the asymmetry of the electronic states in the hole- and electron-doped cuprates by using a $t\text{\ensuremath{-}}J$ model with the second-neighbor hopping ${t}^{\ensuremath{'}}$ and third one ${t}^{\ensuremath{''}}$ (the $t\text{\ensuremath{-}}{t}^{\ensuremath{'}}\text{\ensuremath{-}}{t}^{\ensuremath{''}}\text{\ensuremath{-}}J$ model). Numerically exact diagonalization method is employed for a 20-site square lattice. We impose twisted boundary conditions (BC) instead of standard periodic BC. For static and dynamical correlation functions, averaging procedure over the twisted BC is used to reduce the finite-size effect. We find that antiferromagnetic spin correlation remains strong in electron doping in contrast to the case of hole doping, being similar to the case of the periodic BC. This leads to a remarkable electron-hole asymmetry in the dynamical spin structure factor and two-magnon Raman scattering. By changing the twist, the single-particle spectral function is obtained for all momenta in the Brillouin zone. Examining the spectral function in detail, we find a gap opening at around the $\mathbf{k}=(\ensuremath{\pi},0)$ region for 10% doping of holes (the carrier concentration x=0.1x=0.1x=0.1), leading to a Fermi arc that is consistent with experiments. In electron doping, however, a gap opens at around $\mathbf{k}=(\ensuremath{\pi}∕2,\ensuremath{\pi}∕2)$ and persists up to x=0.2x=0.2x=0.2, being correlated with the strength of the antiferromagnetic correlation. We find that the magnitude of the gaps is sensitive to ${t}^{\ensuremath{'}}$ and ${t}^{\ensuremath{''}}$. A pseudogap is also seen in the optical conductivity for electron doping, and its magnitude is found to be the same as that in the spectral function. We compare calculated quantities with corresponding experimental data, and discuss similarities and differences between them as well as their implications.
A next-nearest-neighbor hopping t' in the t-t'-J model has a different sign between the hole- and electron-doped systems of high-Tc{\mathit{T}}_{\mathit{c}}Tc​ cuprates: t'0 for the hole-doped system and t'>0 for the electron-doped system. We show that the sign is responsible for the remarkable difference of antiferromagnetic (AF) phases between the two systems. To reveal this and clarify the role of t', we examine magnetic excitations of the t-t'-J model by employing exact diagonalization techniques for 4\ifmmode\times\else\texttimes\fi{}4 and \ensuremath{\surd}18 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}18 lattices. In the low-doping region (two-hole case of the \ensuremath{\surd}18 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}18 lattice), AF spin correlations are stabilized for the case of t'>0, i.e., electron-doping case, but not for the case of t'0. In the high-doping region (four-hole case of the 4\ifmmode\times\else\texttimes\fi{}4 lattice and more) magnetic excitations are mainly controlled by the geometry of the Fermi surface of the noninteracting system.
Asymmetric features of various physical quantities in the normal and superconducting states between hole- and electron-doped cuprate high-temperature superconductors have been an issue of debate for a long time. Their exploration is very important for the understanding not only of the mechanism of high-Tc superconductivity but also of the nature of doped-Mott insulators. Presented in this review is the present status of theoretical understanding of the electronic states in hole- and electron-doped high- Tc cuprates as well as the origin of the electron-hole asymmetry of the electronic states. In particular, it is shown that numerically exact diagonalization calculations for small clusters in a t-J model with long-range hoppings, t and t nicely reproduce the electron-hole asymmetry observed experimentally in various quantities and thus make it possible to extract the physical origin of the asymmetry. These results give a deep insight on the asymmetric behaviors in hole- and electron-doped high-Tc cuprates and on the nature of doped Mott insulators.
We examine the electronic states in the hole- and electron-doped cuprates by using the t-t′-t″-J model. Numerically exact diagonalization method is employed for a 20-site square lattice under twisted boundary conditions. The density of states in the underdoped region clearly shows a pseudogap behavior near the Fermi level in both hole and electron dopings. In hole doping, the edge of the pseudogap in the occupied side exhibits a large weight that comes from a flat band near k=(π,0). In contrast, the weight near the gap edge in electron doping is larger for the unoccupied side than for the occupied side.
The competition between ddd-wave superconductivity (SC) and antiferromagnetism (AF) in the high-Tc{T}_{c}Tc​ cuprates is investigated by studying the hole- and electron-doped two-dimensional Hubbard model with a recently proposed variational quantum-cluster theory. The approach is shown to provide a thermodynamically consistent determination of the particle number, provided that an overall shift of the on-site energies is treated as a variational parameter. The consequences for the single-particle excitation spectra and for the phase diagram are explored. By comparing the single-particle spectra with quantum Monte Carlo and experimental data, we verify that the low-energy excitations in a strongly correlated electronic system are described appropriately. The cluster calculations also reproduce the overall ground-state phase diagram of the high-temperature superconductors. In particular, they include salient features such as the enhanced robustness of the antiferromagnetic state as a function of electron doping and the tendency towards phase separation into a mixed antiferromagnetic-superconducting phase at low doping and a pure superconducting phase at high (both hole and electron) doping.
We study the $t\text{\ensuremath{-}}{t}^{\ensuremath{'}}\text{\ensuremath{-}}{t}^{\ensuremath{''}}\text{\ensuremath{-}}J$ model with parameters chosen to model an electron-doped high-temperature superconductor. The model with one, two, and four charge carriers is solved on a 32-site lattice using exact diagonalization. Our results demonstrate that at doping levels up to x=0.125x=0.125x=0.125 the model possesses robust antiferromagnetic correlation. When doped with one charge carrier, the ground state has momenta $(\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi},0)$ and $(0,\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi})$. On further doping, charge carriers are unbound and the momentum distribution function can be constructed from that of the single-carrier ground state. The Fermi surface resembles that of small pockets at single-charge-carrier ground-state momenta, which is the expected result in a lightly doped antiferromagnet. This feature persists upon doping up to the largest doping level we achieved. We therefore do not observe the Fermi surface changing shape at doping levels up to 0.125.