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arXiv:cond-mat/0009253

Electronic properties of the degenerate Hubbard Model : A dynamical mean field approach

P. Lombardo, G. Albinet

Published Sep 18, 2000• 0 citations
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Abstract

We have investigated electronic properties of the degenerate multi-orbital Hubbard model, in the limit of large spatial dimension. A new local model, including a doubly degenerate strongly correlated site has been introduced and solved in the framework of the non-crossing approximation (NCA). Mott-Hubbard transitions have been examined in details, including the calculation of Coulomb repulsion critical values and electronic densities of states for any regime of parameters.

DOI
10.48550/arxiv.cond-mat/0009253

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Abstract In this work for an interacting electrons system that obeys the Hubbard model, a new quantum Monte Carlo algorithm introduces for calculation of average Green function. This algorithm is applied to investigate the effects of electrons onsite Coulomb repulsion on the band structure of a square lattice in both single-site approximations such as dynamical mean field theory (DMFT) and multi-site approximations such as effective medium supercell approximation (EMSCA). The advantages of our algorithm in comparison to the Hirsch-Fye algorithm and also the Blankenbecler, Scalapino, and Sugar (BSS) algorithm are the elimination of instabilities resulting from the Metropolis algorithm in the accepting and rejecting configurations, stability at low temperatures, the elimination of systematic errors resulting from the update of the Green's function in the quantum Monte Carlo process, and considering different probabilities for each possible configuration. Finally, by using our algorithm, it is possible to calculate the interacting three-dimensional system's band structure and the density of states that obey the Hubbard model. We have applied our algorithm to an interactive two-dimensional square lattice. As a result, phase transition boundaries can be easily recognized through calculated bands for different repulsions. Our results show that critical Coulomb repulsion values for Mott transition are uc=9.05t and uc=2.4t for DMFT and BEMSCA respectively. This means that DMFT significantly overestimates band splitting due to electrons' Coulomb repulsion. We found by starting at low repulsions and then increasing electrons' Coulomb repulsion, a partially flatted valance band around the center of the first Brillouin zone appears, but disappears at high repulsions.
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A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott--Hubbard insulating phase is found at intermediate values of the one-body potential $\ensuremath{\Delta}$ with increasing the Coulomb interaction UUU. We obtain a critical region in which the metallic phase disappears and a coexistence phase between the band and the Mott insulating state sets in. Our results are consistent with those obtained at low dimensions, thus they provide a concrete description for the charge degrees of freedom of the ionic Hubbard model.