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YBCO HEB THz mixers

Arvid Hammar, Serguei Cherednichenko, Stella Bevilacqua

Published Jan 1, 2011• 0 citations
OpenAlex

Abstract

We report on an experimental investigation of high-Tc superconducting hot electron bolometer (HEB) mixers of YBCO. These mixers were tested at 100 and 530 GHz LO for a range of temperatures around 77 K. The conversion gain of -32 dB was measured at an LO power of about 1 mW (530 GHz) and 0.3 GHz IF. The mixers were integrated with a logarithmic spiral antenna on a silicon lens, providing a broad frequency coverage (well above 1 THz). To measure the incident RF signal power we used the homodyne responsivity (see abstract "Terahertz response of YBCO HEB homodyne detectors") which is referenced to the input of the silicon lens where the bolometers were glued. Corrections were made for losses in the cryostat window and polarization losses between the signal and antenna. We made the measurements at different temperatures and different LO power levels which were measured using a quasi optical detector at room temperature. The 3 dB gain bandwidth was measured to be about 0.2 GHz. The bolometer bridges have nominal dimensions 1 μm x 2 μm x 50 nm and are fabricated on sapphire substrates using UV photolithography. Backward wave oscillators sources were used at 530 GHz and Gunn diodes at 100 GHz.

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•May 1, 2000•1 citation
We report on an experimental investigation of high-Tc superconducting hot electron bolometer (HEB) mixers of YBCO. These mixers were tested at 100 and 530 GHz LO for a range of temperatures around 77 K. The conversion gain of -32 dB was measured at an LO power of about 1 mW (530 GHz) and 0.3 GHz IF. The mixers were integrated with a logarithmic spiral antenna on a silicon lens, providing a broad frequency coverage (well above 1 THz). To measure the incident RF signal power we used the homodyne responsivity (see abstract "Terahertz response of YBCO HEB homodyne detectors") which is referenced to the input of the silicon lens where the bolometers were glued. Corrections were made for losses in the cryostat window and polarization losses between the signal and antenna. We made the measurements at different temperatures and different LO power levels which were measured using a quasi optical detector at room temperature. The 3 dB gain bandwidth was measured to be about 0.2 GHz. The bolometer bridges have nominal dimensions 1 μm x 2 μm x 50 nm and are fabricated on sapphire substrates using UV photolithography. Backward wave oscillators sources were used at 530 GHz and Gunn diodes at 100 GHz.
Small volume high-Tc super-conducting YBa2Cu3O7 (YBCO) thin films are used as low power, very wide bandwidth mixers in the frequency range of 75 GHz to 2.5 THz. The YBCO films are patterned into lattice-cooled hot-electron bolometers (HEB) coupled to an integrated Au thin-film antenna and transmission line. Near 77 K, these mixers have responsivity as high as 780 V/W using only 8 nW of local oscillator (LO) power at 585 GHz. The responsivity can be shown to be truly bolometric. Direct heterodyne and homodyne down-conversion mixing using local-oscillator frequencies of 75 GHz and 585 GHz show overall conversion gains of -35 dB, which includes a -18 dB coupling loss, using only approximately 1 (mu) W of LO power. The gain bandwidth shows a simple Lorentzian roll-off with -3 dB point of 5 to 8 GHz. The large gain bandwidth and small power requirements make these high-Tc superconducting mixers an attractive alternative to existing Schottky diode and conventional superconducting receiver technologies.
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
The conversion gain bandwidth characteristics of millimeter-wave mixers using high-Tc superconducting YBa2Cu307 (YBCO) thin films are presented. The YBCO films are patterned into latticecooled hot-electron bolometers (HEB) coupled to an integrated antenna and transmission line. Direct heterodyne and homodyne down-conversion measurements using local-oscillator frequencies of 75 GHz and 585 GHz show overall conversion gains of -35 dB, which includes a -18 dB coupling loss. The gain bandwidth shows a simple Lorentzian roll-off with -3 dB point of 5 to 8 GHz. No second plateau in the gain spectrum has been observed, in contrast to other reports. The effective volume of the HEB is believed to be significantly smaller than the physical dimensions of the device. Gershenzon, et al. 1 first proposed the design of a lattice-cooled superconducting hot-electron bolometer (HEB) for use as a low-power, wide-band-width heterodyne mixer at millimeter and submillimeter-wave frequencies. This idea has been successfully implemented using NbN , which shows a conversion gain as high as -15 dB using 1 1.tW of pump power at a temperature of 4.2 K. The ultimate speed and bandwidth of the lattice-cooled HEB is determined by the electron-phonon scattering rate. For this reason, Gershenzon 3 suggested that the high normal-state resistivity of the high-Tc superconductor YBa2Cu307 (YBCO) could indicate a very fast electron inelastic scattering, rate and so make this material an ideal candidate to produce a very wide instantaneous bandwidth lattice-cooled HEB operating at 77 K. The first reports of such mixers at 1.5 gm (Ref. 4) and 9.6 gm (Ref. 5) wavelengths showed a very low intrinsic conversion gain of -77 dB (excluding coupling losses) using a relatively large 0.3 mW of absorbed LO power. However, the gain bandwidth showed a twoplateau structure. A low frequency plateau near -77 dB rolled off near 1 GHz intermediate frequency (IF) but gave way to a second plateau near -90 dB that extended to at least 18 GHz, the upper limit of the measurement. Karasik, et al., have done extensive calculations on the conversion gain properties of lattice-cooled HEB mixers for different mixer dimensions, using a two-temperature model. They found that the conversion gain increases
We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.