The influence of radio frequency microwaves on the Coulomb blockade characteristics in small Josephson junctions was studied using a one-dimensional array of ten small Al tunnel junctions in the frequency range from 1 MHz to 1000 MHz. Coulomb blockade voltage (
Vth) is diminished with increasing microwave power (
Vac), where the
Vth-
Vac plots for varied frequencies fall on a single curve. We observed and theoretically analyzed a magnetic field
dependent renormalization of the applied microwave power, in addition to a magnetic-field
independent renormalization effect explained using an effective circuit approach of the array. Due to its high sensitivity to microwave power, the array is well-suited for on-chip detection applications in low temperature environments.
The power spectral density of current noise in phase-coherent semiconductor tunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An enhancement of the power spectral density of the current fluctuations is predicted for very high frequencies. The experimental measurement of this high frequency effect is discussed as a possible test of Bohm trajectories.
We have developed a bolometer with a suspended normal-metal absorber connected to superconducting leads via tunneling barriers. Such an absorber has reduced heat losses to the substrate, which greatly increases the responsivity of the bolometer to over 109 V/W at 75 mK when measured by dc Joule heating of the absorber. For high-frequency experiments, the bolometers have been integrated in planar twin-slot and log-periodic antennas. At 300 GHz and 100 mK, the bolometer demonstrates the voltage and current response of 3 × 108 V/W and 1.1 × 104 A/W, respectively, corresponding to the quantum efficiency of ∼15 electrons per photon. An effective thermalization of electrons in the absorber favors the high quantum efficiency. We also report on how the in-plane- and transverse magnetic fields influence the device characteristics.