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Chinese Physics Letters

Exciton Excitations in a One－Dimensional Band Insulator with Hubbard Interactions

顾波, 娄继忠, 覃绍京, 向涛

Published Jan 1, 2004• 0 citations
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Abstract

We study the properties of exciton excitations in the Hubbard model with alternating potential and dimerized hopping terms at half filling. With increasing Coulomb repulsive, we find that a spin triplet exciton band develops below the band gap. At certain critical interaction, the excitation gap of this exciton band vanishes and a new phase with a dimerized ground state emerges. The value of this critical Coulomb interaction is determined perturbatively.

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We study the properties of exciton excitations in the Hubbard model with alternating potential and dimerized hopping terms at half filling. With increasing Coulomb repulsive, we find that a spin triplet exciton band develops below the band gap. At certain critical interaction, the excitation gap of this exciton band vanishes and a new phase with a dimerized ground state emerges. The value of this critical Coulomb interaction is determined perturbatively.
We report a systematic study of the transition from a band insulator (BI) to a Mott insulator (MI) in a one-dimensional Hubbard model at half-filling with an on-site Coulomb interaction U and an alternating periodic site potential V. We employ both the zero-temperature density matrix renormalization group (DMRG) method to determine the gap and critical behavior of the system and the finite-temperature transfer matrix renormalization group method to evaluate the thermodynamic properties. We find two critical points at U=Uc{U=U}_{c}U=Uc​ and U=Us{U=U}_{s}U=Us​ that separate the BI and MI phases for a given V. A charge-neutral spin-singlet exciton band develops in the BI phase (U<Uc)(U<{U}_{c})(U<Uc​) and drops below the band gap when U exceeds a special point Ue.{U}_{e}.Ue​. The exciton gap closes at the first critical point Uc{U}_{c}Uc​ while the charge and spin gaps persist and coincide between Uc<U<Us{U}_{c}<U<{U}_{s}Uc​<U<Us​ where the system is dimerized. Both the charge and spin gaps collapse at U=Us{U=U}_{s}U=Us​ when the transition to the MI phase occurs. In the MI phase (U>Us)(U>{U}_{s})(U>Us​) the charge gap increases almost linearly with U while the spin gap remains zero. These findings clarify earlier published results on the same model, and offer insights into several important issues regarding an appropriate scaling analysis of DMRG data and a full physical picture of the delicate nature of the phase transitions driven by electron correlation. The present work provides a comprehensive understanding for the critical behavior and phase diagram for the transition from BI to MI in one-dimensional correlated electron systems with a periodic alternating site potential.
The effect of an alternating potential on a one-dimensional half-filled Hubbard model with repulsive interaction has been examined by applying the renormalization group method to the bosonized Hamiltonian. The electronic state, which is determined by the competition between alternating potential and umklapp scattering, is calculated where the relevance and the irrelevance of the alternating potential leads to the band insulator and the Mott insulator respectively. The excitation gaps for charge and spin fluctuations are calculated for both states.
We employ dynamical density-matrix renormalization-group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard models. The field-theory approach is applicable to the regime of ``small'' Mott gaps which is the most difficult to access by DDMRG. For very large Mott gaps the DDMRG recovers analytical results obtained previously by means of strong-coupling techniques. We focus on exciton formation at energies below the onset of the absorption continuum. As a consequence of spin-charge separation, these Mott-Hubbard excitons are bound states of spinless, charged excitations (``holon-antiholon'' pairs). We also determine exciton binding energies and sizes. In contrast to simple band insulators, we observe that excitons exist in the Mott-insulating phase only for a sufficiently strong intersite Coulomb repulsion. Furthermore, our results show that the exciton binding energy and size are not related in a simple way to the strength of the Coulomb interaction.
We employ dynamical density-matrix renormalization-group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended. half-filled Hubbard models. The field-theory approach is applicable to the regime of "small" Mott gaps which is the most difficult to access by DDMRG. For very large Mott gaps the DDMRG recovers analytical results obtained previously by means of strong-coupling techniques. We focus on exciton formation at energies below the onset of the absorption continuum. As a consequence of spin-charge separation, these Mott-Hubbard excitons are bound states of spinless, charged excitations ("holon-antiholon" pairs). We also determine exciton binding energies and sizes. In contrast to simple band insulators, we observe that excitons exist in the Mott-insulating phase only for a sufficiently strong intersite Coulomb repulsion. Furthermore, our results show that the exciton binding energy and size are not related in a simple way to the strength of the Coulomb interaction.
We investigate the ground-state phase diagram of the one-dimensional 'ionic' Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix renormalization group methods. We identify an insulator–insulator phase transition from a band to a correlated insulator with simultaneous charge and bond-charge order. The transition point is characterized by the vanishing of the optical excitation gap while simultaneously the charge and spin gaps remain finite and equal. Indications for a possible second transition into a Mott-insulator phase are discussed.