Decay times of excitons in lattice-matched InGaAs/InP single quantum wells
Igal Brener, D. Gershoni, D. Ritter +2 more
A study of the photoluminescence decay times in lattice-matched InGaAs/InP single quantum wells grown by two different epitaxial techniques is presented. We show that these decay times can be measured directly using a nonlinear photoluminescence autocorrelation technique. A model based on the saturation of localized exciton states describes the temporal behavior and the optical nonlinearities observed very well.
Applied Physics Letters•Mar 4, 1991•10 citations