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npj Quantum Information

High-fidelity flopping-mode single-spin operation via triple-dot orbital-band engineering

Y. Matsumoto, X.-F. Liu, Arne Ludwig, Andreas Dirk Wieck, K. Koike, T. Miyoshi, T. Fujita, A. Oiwa

Published Oct 24, 2026• 0 citations
Publisher

Abstract

Abstract Fast electrical spin rotations in quantum dots require strong spin-charge hybridization, but the same hybridization can increase sensitivity to detuning noise. In a double-quantum-dot (DQD) flopping-mode qubit, the sweet-spot width and the Rabi enhancement are both tied to the same orbital splitting, limiting post-fabrication optimization of the speed-coherence trade-off. Here, we demonstrate a GaAs triple-quantum-dot (TQD) flopping-mode qubit in which the detuning of the third dot, ϵ 34 , provides an additional electrical tuning parameter for orbital-band flattening. Tuning ϵ 34 flattens the qubit-frequency dependence on the detuning of the target DQD while maintaining strong spin-charge hybridization, enabling electrically driven Rabi frequencies above 100 MHz. We then use feedforward-neural-network (FNN) feedback to track slow qubit-frequency drift and connect this engineered operating point to high-fidelity gates. This feedback suppresses slow qubit-frequency fluctuations, reducing their standard deviation to 388 kHz, and yields a π /2 gate fidelity of 99.56% with a 4.05 ns gate time. These results identify TQD orbital-band engineering as an electrical route for tuning the speed-coherence trade-off, complementary to material-intrinsic spin-orbit coupling and fixed micromagnet geometry.

DOI
10.1038/s41534-026-01400-1

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Abstract Fast electrical spin rotations in quantum dots require strong spin-charge hybridization, but the same hybridization can increase sensitivity to detuning noise. In a double-quantum-dot (DQD) flopping-mode qubit, the sweet-spot width and the Rabi enhancement are both tied to the same orbital splitting, limiting post-fabrication optimization of the speed-coherence trade-off. Here, we demonstrate a GaAs triple-quantum-dot (TQD) flopping-mode qubit in which the detuning of the third dot, ϵ 34 , provides an additional electrical tuning parameter for orbital-band flattening. Tuning ϵ 34 flattens the qubit-frequency dependence on the detuning of the target DQD while maintaining strong spin-charge hybridization, enabling electrically driven Rabi frequencies above 100 MHz. We then use feedforward-neural-network (FNN) feedback to track slow qubit-frequency drift and connect this engineered operating point to high-fidelity gates. This feedback suppresses slow qubit-frequency fluctuations, reducing their standard deviation to 388 kHz, and yields a π /2 gate fidelity of 99.56% with a 4.05 ns gate time. These results identify TQD orbital-band engineering as an electrical route for tuning the speed-coherence trade-off, complementary to material-intrinsic spin-orbit coupling and fixed micromagnet geometry.
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at gigahertz (GHz) gate speeds. We analyze the decoherence caused by 1/f1/f1/f charge noise in this qubit, find parameters that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.
Abstract We implement resonant single qubit operations on a semiconductor hybrid qubit hosted in a three-electron Si/SiGe double quantum dot structure. By resonantly modulating the double dot energy detuning and employing electron tunnelling-based readout, we achieve fast (>100 MHz) Rabi oscillations and purely electrical manipulations of the three-electron spin states. We demonstrate universal single qubit gates using a Ramsey pulse sequence as well as microwave phase control, the latter of which shows control of an arbitrary rotation axis on the X–Y plane of the Bloch sphere. Quantum process tomography yields π rotation gate fidelities higher than 93 (96)% around the X (Z) axis of the Bloch sphere. We further show that the implementation of dynamic decoupling sequences on the hybrid qubit enables coherence times longer than 150 ns.
A triple-quantum-dot system can be operated as either an exchange-only qubit or a resonant-exchange qubit. While it is generally believed that the decisive advantage of the resonant-exchange qubit is the suppression of charge noise because it is operated at a sweet spot, we show that the leakage is also an important factor. Through molecular-orbital-theoretic calculations, we show that when the system is operated in the exchange-only scheme, the leakage to states with double electron occupancy in quantum dots is severe when rotations around the axis ${120}^{\ensuremath{\circ}}$ from $\stackrel{\ifmmode \hat{}\else \^{}\fi{}}{z}$ is performed. While this leakage can be reduced by either shrinking the dots or separating them further, the exchange interactions are also suppressed at the same time, making the gate operations unfavorably slow. When the system is operated as a resonant-exchange qubit, the leakage is three to five orders of magnitude smaller. We have also calculated the optimal detuning point which minimizes the leakage for the resonant-exchange qubit, and have found that although it does not coincide with the double sweet spot for the charge noise, they are rather close. Our results suggest that the resonant-exchange qubit has another advantage, that leakage can be greatly suppressed compared to the exchange-only qubit, and operating at the double sweet spot point should be optimal both for reducing charge noise and suppressing leakage.
The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages.These so-called sweet spots are beneficial for charge coherence since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized.We propose a new operation point for a triple quantum dot charge qubit, a so-called CQ 3 -qubit, having a third-order sweet spot.We show strong coupling of the qubit to single photons in a frequency tunable high-impedance SQUID-array resonator.In the dispersive regime, we investigate the qubit linewidth in the vicinity of the proposed operating point.In contrast to the expectation for a higher-order sweet spot, we there find a local maximum of the linewidth.We find that this is due to a non-negligible contribution of noise on the quadrupolar detuning axis not being in a sweet spot at the proposed operating point.While the original motivation to realize a low-decoherence charge qubit was not fulfilled, our analysis provides insights into charge decoherence mechanisms relevant also for other qubits.
High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with 1/f1/f1/f Charge Noise
Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve XπX_{\pi}Xπ​ gates with fidelities higher than 99.9%99.9\%99.9%.
Semiconductor double quantum-dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve ${X}_{\ensuremath{\pi}}$ gates with fidelities higher than 99.999.9%99.9.