Photocreation of excitons
Monique Combescot, Shiue-Yuan Shiau
Abstract
Abstract The chapter « Photocreation of excitons » addresses the creation of excitons by photon absorption. It explains why, for photons to be absorbed in a semiconductor, it is necessary to prevent the formation of long-lived exciton-polaritons by changing the exciton center-of-mass wave vector through collisions with crystal defects or lattice thermal vibrations. The exciton lifetime associated with this broadening dresses the coupled photon with a finite lifetime that ends by producing a photon number decrease, which fundamentally corresponds to photon absorption. The exciton broadening is handled via an energy imaginary part, that is, a nonhermitian photon-exciton Hamiltonian with ket and bra eigenstates. The time evolution of the photon number leads to an optimum absorption that results from the competition between the photon coupling to exciton and the decrease of the coupled exciton number due to wave vector relaxation.