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First principles investigation of solid state defects acting as quantum bits

Meysam Mohseni

Published May 4, 2026• 0 citations
Publisher
DOI
10.15476/elte.2025.424

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Point defects in diamond may act as quantum bits. Recently, oxygen-vacancy related defects have been proposed to the origin of the so-called ST1 color center in diamond that can realize a long-living solid-state quantum memory. Motivated by this proposal we systematically investigate oxygen-vacancy complexes in diamond by means of first principles density functional theory calculations. We find that all the considered oxygen-vacancy defects have a high-spin ground state in their neutral charge state, which disregards them as an origin for the ST1 color center. We identify a high-spin metastable oxygen-vacancy complex and characterize their magneto-optical properties for identification in future experiments.
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Abstract Understanding defect-phonon interactions in solid-state devices is crucial for improving our current knowledge of quantum platforms. In this work, we develop first-principles calculations for a defect composed of two spin- 1 / 2 particles that interact with phonon modes in a one-dimensional lattice. We follow a bottom-up approach that begins with a dipolar magnetic interaction to ultimately derive the spectral density function and time-local master equation that describes the open dynamics of the defect. We provide theoretical and numerical analysis for the non-Markovian (NM) features of the defect-phonon dynamics induced by a pure dephasing channel acting on the Bell basis. Finally, we analyze two measures of NM based on the canonical rates and Coherence, shedding more light on the role of the spectral density function and temperature; and envisioning experimental realizations.