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Deterministic 0,1 Optical Memory via Near-Zero Absolute Point Synchronization in Tri-Doped Silicon

Michael Allan Bahtaji

Published Sep 5, 2026• 0 citations
Publisher

Abstract

The propose an application-oriented method to realize deterministic binary optical memory by collapsing quantum optical states to a Near-Zero Absolute Point NZAP using cascaded Fourier, Non-Euclidean Euler, and Euclidean transforms. Implemented in tri-doped silicon, the system encodes 0 as electron radial expansion and 1 as compression, with fixed spin, achieving S≈0 and zero decoherence without cryogenics. The present accepted photonic evidence, mathematical procedures, and lab protocols for sub-20nm device fabrication and testing. Keywords: entropy reduction, destructive interference, silicon photonics, quantum memory, Fourier optics

DOI
10.5281/zenodo.22312770

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The propose an application-oriented method to realize deterministic binary optical memory by collapsing quantum optical states to a Near-Zero Absolute Point NZAP using cascaded Fourier, Non-Euclidean Euler, and Euclidean transforms. Implemented in tri-doped silicon, the system encodes 0 as electron radial expansion and 1 as compression, with fixed spin, achieving S≈0 and zero decoherence without cryogenics. The present accepted photonic evidence, mathematical procedures, and lab protocols for sub-20nm device fabrication and testing. Keywords: entropy reduction, destructive interference, silicon photonics, quantum memory, Fourier optics
Deterministic 0,1 Optical Memory via Near-Zero Absolute Point Synchronization in Tri-Doped Silicon michael allan a. bahtaji, ph.d. 1Department of Physics, Technological University of the Philippines Ayala bopulevard Ermita Maila Philippines 1000 *michaelallanbahtaji336@gmail.com Received XX Month XXXX; revised XX Month, XXXX; accepted XX Month XXXX; posted XX Month XXXX (Doc. ID XXXXX); published XX Month XXXX The propose an application-oriented method to realize deterministic binary optical memory by collapsing quantum optical states to a Near-Zero Absolute Point NZAP using cascaded Fourier, Non-Euclidean Euler, and Euclidean transforms. Implemented in tri-doped silicon, the system encodes 0 as electron radial expansion and 1 as compression, with fixed spin, achieving S≈0 and zero decoherence without cryogenics. The present accepted photonic evidence, mathematical procedures, and lab protocols for sub-20nm device fabrication and testing. Keywords: entropy reduction, destructive interference, silicon photonics, quantum memory, Fourier optics
Geometric Zero-Sum Trapping: From Euclidean Curvature to Electron-Spin Qubits for Room-Temperature Photonic Memory Abstract We introduce Geometric Zero-Sum Trapping, where input intensity tunes the effective optical curvature of a dielectric sphere and nanofiber via an optical analog of Euler’s relation. High intensity drives self-retracing path density, pushing geometry from non-Euclidean to near-Euclidean with trapping coefficient B ≈ 1. Low intensity yields B ≪ 1, enabling ns release. We link this geometric transition to collective electron spin deflection in reflection, refraction, and diffraction. The mechanism scales to the atomic limit, enabling light storage in a single electron spin without a physical cavity, providing a path to room-temperature photonic bits.
Integrated photonic circuits offer great promise for quantum technologies. However, due to the rapid propagation of light, many envisioned applications require efficient on-chip quantum memories with a programmable delay, compact footprint, and high fidelity. Implementing this based on standard semiconductor processing technology is an outstanding challenge. Here, we realize such memories using erbium-doped silicon waveguides, fabricated as part of a multi-wafer project by a nanophotonic foundry. We demonstrate light storage with a 44.2(9) MHz44.2(9)\ \text{MHz}44.2(9) MHz bandwidth and a programmable delay exceeding 1 μs1\ μ\text{s}1 μs in a device with a footprint of only 1.5×10−2 mm21.5\times 10^{-2}\ \text{mm}^21.5×10−2 mm2, outperforming on-chip delay lines by many orders of magnitude. The phase of the read-out light field is preserved with a visibility of 91.3(30) %91.3(30)\ \%91.3(30) %. The efficiency of 1.89(28)×10−81.89(28)\times 10^{-8}1.89(28)×10−8 can be improved in future devices through resonator enhancement and higher dopant concentrations. With this, the demonstrated approach will pave the way towards applications in photonic quantum computing based on scalable silicon processing technology.
Geometric Zero-Sum Trapping: From Euclidean Curvature to Electron-Spin Qubits for Room-Temperature Photonic Memory Abstract We introduce Geometric Zero-Sum Trapping, where input intensity tunes the effective optical curvature of a dielectric sphere and nanofiber via an optical analog of Euler’s relation. High intensity drives self-retracing path density, pushing geometry from non-Euclidean to near-Euclidean with trapping coefficient B ≈ 1. Low intensity yields B ≪ 1, enabling ns release. We link this geometric transition to collective electron spin deflection in reflection, refraction, and diffraction. The mechanism scales to the atomic limit, enabling light storage in a single electron spin without a physical cavity, providing a path to room-temperature photonic bits.
Chapter 1 reviews recent advances towards the realization of quantum networks based on atom-like solid-state quantum emitters coupled to nanophotonic devices. Specifically, focus is on experiments involving the negatively charged silicon-vacancy color center in diamond. These emitters combine homogeneous, coherent optical transitions and a long-lived electronic spin quantum memory. Optical and spin properties of this system at cryogenic temperatures and experiments where silicon-vacancy centers are coupled to nanophotonic cavities are discussed. Finally, the chapter discusses experiments demonstrating quantum nonlinearities at the single-photon level and two-emitter entanglement in a single nanophotonic device.
Over the past decade, quantum computers have emerged as a promising technology to enable transformational advances in information processing and communication and solve problems that are intractable to classical computers. While there is great promise in linking quantum computers together over long distances via quantum channels, these technologies are still under development. Solid-state emitters with coherent spin-photon interfaces, long spin lifetimes, and narrow optical transitions are a leading platform for use as quantum memories in networked quantum repeaters. However, while such emitters have already enabled advanced quantum networking demonstrations in laboratory settings, applying these devices as useful memory devices at scale is a key outstanding challenge. In this thesis, we experimentally investigate solid-state quantum memories for quantum information applications. First, we develop experimental techniques to characterize solid-state emitters with high throughput, enabling both better understanding of the distribution of emitter properties and improved feedback on material preparation and device fabrication. Next, we implement quantum frequency conversion to create a coherent spin-photon interface between silicon-vacancy centers in diamond and optical photons in the low-loss telecom band. Finally, we investigate color centers in other engineering materials, including silicon and silicon carbide, to better understand the fundamental trade space of requirements for solid-state hosts. Together, these efforts represent a significant advance in creating, controlling, and deploying telecom-compatible spin interfaces, paving the way for memory-enabled quantum repeaters.