Research and development of an ultrahigh-precision single-ion implanter
Yuri Yosuke, Hosaka Koichi, Miyawaki Nobumasa, Ishii Yasuyuki, Seiji Hosoya, Kashiwagi Hirotsugu, Yamagata Ryohei, Onoda Shinobu, Kento Muroo, 伊藤清一, 岡本宏己
Abstract
Ion implantation is an accelerator-based technology used to create defects and introducing impurities into solid materials. A research and development study is currently underway toward ultrahigh-precision single-ion implantation using laser-cooling techniques at Takasaki Institute, National Institutes for Quantum Science and Technology. To achieve this, we incorporate a linear Paul trap as an ultracold single-ion source, where trapped ions can be made “Coulomb-crystallized” through Doppler laser cooling. In our scheme, nitrogen or silicon ions, useful for ion implantation to create color centers in materials, are sympathetically cooled through Coulomb collisions by co-trapping them with laser-cooled calcium ions to form a two-component crystal. These cold ions are then selectively extracted from the trap to be accelerated and focused through a 50-kV electrostatic bipotential-lens system. Our goal is to achieve beam focusing for ultrahigh-precision implantation on the order of 10 nm. The implanter system has already been assembled, and the commissioning is currently ongoing to enable single-ion extraction using a Coulomb crystal. In these proceedings, we describe the scheme for selective ion extraction and nanobeam focusing based on multiparticle simulations and briefly report recent progress in system implementation.