Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review Applied

Efficient growth of preferentially oriented N- V ensemble in diamond

Anonymous, Chaonan Lin, Xian-Qi Dong, Cheng-Liang Yue, Yuan Zhang, Yan Liu, Qing Lou, Chongxin Shan, Ren-fu Yang

Published Aug 3, 2026• 0 citations
Publisher
DOI
10.1103/j49w-98p8

Related papers

Growth Temperature Dependence of Nitrogen Doped Diamonds for Selectively Aligned NV ensemble

勇斗 小澤, Hayato Ozawa, 康佐 田原 +7 more

•Aug 1, 2016•0 citations

Selectively-aligned high density NV center ensemble in (111) diamond : from CVD-growth to sensing application

康佐 田原, Kosuke Tahara, 勇斗 小澤 +7 more

•Oct 3, 2016•0 citations

Collection Efficiency Improvement of NV center by Selective Growth of Diamond

Satoko Furuyama

The Japan Society of Applied Physics•Feb 6, 2015•0 citations

Laser Writing of Preferentially Orientated Nv Centers in Diamond

Kohei Kinouchi, Yasuhiko Shimotsuma, Mitsuharu Uemoto +4 more

•Jan 1, 2023•0 citations

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

Margarita Lesik, Jean‐Philippe Tetienne, Alexandre Tallaire +5 more

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

arXiv:1401.2795•Applied Physics Letters•Mar 17, 2014•134 citations

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

Margarita Lesik, Jean‐Philippe Tetienne, A Tallaire (20076945) +5 more

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications. © 2014 AIP Publishing LLC.

•Nov 2, 2024•78 citations
We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.
We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications. © 2014 AIP Publishing LLC.