Integrated nonlinear microring resonators are promising sources of bright twin-beams exhibiting intensity difference squeezing. To take advantage of the noise reduction of these quantum states, many applications require high squeezing levels. However, the attainable on-chip squeezing is constrained by the ratio of intrinsic to coupling loss, which is strongly related to design and fabrication limits. Here, we demonstrate a silicon nitride microring resonator engineered to enable a set of periodic strongly overcoupled resonances from which the estimated on-chip intensity difference squeezing is 11.8 dB, exceptionally high for an integrated device. Due to significant setup loss, we directly measure 1.4±0.2 dB of squeezing, corresponding to an on-chip level of 9.2±5.1 dB. In addition, the new, to the best of our knowledge, design inherently suppresses mode competition in the modes surrounding the twin-beams, enabling a constant high squeezing level up to moderate powers. These results represent a significant step toward the miniaturization of integrated devices whose performance benefits from surpassing the quantum noise limit using squeezed states, with particular relevance to sensing applications.
Squeezed light, with its quantum noise reduction capabilities, has emerged as a powerful resource in quantum information processing and precision metrology. To reach noise reduction levels such that a quantum advantage is achieved, off-chip squeezers are typically used. The development of on-chip squeezed light sources, particularly in nanophotonic platforms, has been challenging. We report 3.7±0.2dB of directly detected nanophotonic quantum squeezing using foundry-fabricated silicon nitride (Si 3 N 4 ) microrings with an inferred squeezing level of 10.2 dB on-chip. The squeezing level is robust across multiple devices and pump detunings, and is consistent with the overcoupling degree without noticeable degradation from excess classical noise. We also offer insights to mitigate thermally induced excess noise, which typically degrades squeezing, by using small-radius rings with a larger free spectral range (450 GHz) and consequently lower parametric oscillation thresholds. Our results demonstrate that Si 3 N 4 is a viable platform for strong quantum noise reduction in a CMOS-compatible, scalable architecture.
Photonic chips with silicon nitride (
Si3N4) microring resonators are well established as heralded single-photon sources, but their operation as frequency-degenerate twin-photon sources has not previously been demonstrated. Here, we realise a twin-photon source at telecommunication wavelengths in a
Si3N4 ring microresonator via an inverse four-wave mixing (FWM) process, in which two photons from spectrally distinct pumps are converted into a pair of identical twin photons. The measurements show a maximum coincidence-to-accidental ratio (CAR) of
5.4±0.6. In addition, the microresonator functions as a heralded single-photon source through pump-degenerate spontaneous four-wave mixing (SFWM), exhibiting a spectral purity of
P=0.67±0.05 and a heralded anti-bunching of
gh(2)(0)=0.0042±0.0015. Together, these results demonstrate both photon-generation schemes on a single integrated
Si3N4 platform, highlighting its potential for scalable, tailored quantum light generation.
Squeezed states, with their noise reduction below the standard quantum limit, are promising quantum states of light exploited for enhancing sensitivity in quantum sensing or as carriers of information in continuous variable quantum computing and communication. To make use of their quantum advantage, the main common challenge in generating these states is achieving high levels of squeezing in low loss setups.Over the years, several bulk optical nonlinear crystals and cavities have been employed for the generation of different types of high-quality squeezed states. However, recent progress in fabricating ultra-low loss integrated waveguides has shifted the interest of the community towards the integration of squeezing sources to gain advantages in terms of compactness, scalability, and reproducibility.The aim of this thesis is to investigate the main characteristics, limits, and requirements for the generation of vacuum and bright squeezed states by second- and third-order nonlinear devices, with more emphasis on integrated cavities. In particular, we demonstrate high on-chip intensity difference squeezing between bright mode pairs created in an engineered SiN microring resonator. In addition, we propose the use of the Ikeda map, a semi-classical simulation tool, for the investigation of two-mode quadrature squeezing generation in microresonators, discussing its competitiveness against standard quantum models. These results contribute to the optimization of engineered integrated devices with the aim of attaining high levels of squeezing sufficient to bring real advantages in classical and quantum applications.