Advanced Photon Counting Techniques
Simulating noise channels in anti-relaxation coated Cs vapor cells for polarization-qubit quantum memories
Jing Su, Changhoon Park, Olivia Cong, Y. Shi, Xiao Tang, Thomas Gerrits, Oliver Slattery, Lijun Ma
Abstract
We present a simulation-based quantum process tomography study of polarization-qubit storage in warm cesium vapor cells with different coatings. The model incorporates experimentally measured retrieval efficiency as a function of storage time and includes three noise mechanisms: signal-to-noise–induced depolarizing admixture, transverse coherence decay (T2) and longitudinal relaxation (T1). Simulated polarization-analyzer scans are used to reconstruct the affine Bloch map of the memory channel at each storage time. From the reconstructed process, we extract effective depolarization, dephasing, and amplitude-damping parameters and quantify their individual contributions to fidelity loss. The analysis reveals that dephasing dominates infidelity growth, while SNR-driven depolarization becomes increasingly relevant at low retrieval efficiency. Comparative results for uncoated, paraffin-coated, and alkene-coated cells demonstrate coatingdependent coherence preservation and provide a quantitative framework for separating incoherent noise mechanisms in warm-vapor quantum memories.