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Journal of the Optical Society of America B

Optical transistor of the nonlinear resonant structure

김종배

Published Jun 3, 2026• 0 citations
Publisher

Abstract

An optical transistor capable of simultaneous amplification and switching is theoretically proposed via cascaded second-order nonlinear interactions in a resonant structure. Two distinct operational schemes are analyzed. A single-frequency scheme employs cascaded second harmonic generation and inverse second harmonic generation (SHG/iSHG) using two Type-I SHG interactions, whereas a dual-frequency scheme employs cascaded SHG and optical parametric amplification (SHG/OPA). Exact theoretical solutions and numerical calculations show cascadable amplification and digital on/off switching. A new, to our knowledge, optical phenomenon of nonlinear transparency is predicted by the theoretical solutions and confirmed by the numerical solutions in each scheme of the cascaded SHG/iSHG and SHG/OPA. The single- and dual-frequency configurations satisfy the cascadability and fan-out criteria with power transfer ratios of α TR =4.838 and 52.26 and power amplification factors of β AF =48.38 and 522.6, respectively. These results indicate transistor-like performance at input powers in the milliwatt range, which are readily supplied by laser diodes. The proposed structure provides a proof-of-principle theoretical route to optical transistors, which may serve as a basis for future all-optical communication and computing.

DOI
10.1364/josab.599156

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An optical transistor capable of simultaneous amplification and switching is theoretically proposed via cascaded second-order nonlinear interactions in a resonant structure. Two distinct operational schemes are analyzed. A single-frequency scheme employs cascaded second harmonic generation and inverse second harmonic generation (SHG/iSHG) using two Type-I SHG interactions, whereas a dual-frequency scheme employs cascaded SHG and optical parametric amplification (SHG/OPA). Exact theoretical solutions and numerical calculations show cascadable amplification and digital on/off switching. A new, to our knowledge, optical phenomenon of nonlinear transparency is predicted by the theoretical solutions and confirmed by the numerical solutions in each scheme of the cascaded SHG/iSHG and SHG/OPA. The single- and dual-frequency configurations satisfy the cascadability and fan-out criteria with power transfer ratios of α TR =4.838 and 52.26 and power amplification factors of β AF =48.38 and 522.6, respectively. These results indicate transistor-like performance at input powers in the milliwatt range, which are readily supplied by laser diodes. The proposed structure provides a proof-of-principle theoretical route to optical transistors, which may serve as a basis for future all-optical communication and computing.
An optical transistor capable of simultaneous amplification and switching is theoretically proposed via cascaded second-order nonlinear interactions in a resonant structure. Two distinct operational schemes are analyzed. A single frequency scheme employs cascaded second harmonic generation and inverse second harmonic generation (SHG/iSHG) using two Type-I SHG interactions, whereas a dual frequency scheme employs cascaded SHG and optical parametric amplification (SHG/OPA). Exact theoretical solutions and numerical calculations show cascadable amplification and digital on/off switching. A new optical phenomenon of nonlinear transparency is predicted by the theoretical solutions and confirmed by the numerical solutions in each scheme of the cascaded SHG/iSHG and SHG/OPA. The single and dual frequency configurations satisfy the cascadability and fan-out criteria with power transfer ratios of 4.838 and 52.26 and power amplification factors of 48.38 and 522.6, respectively. These results indicate transistor-like performance at input powers in the milliwatt range, readily supplied by laser diodes. The proposed structure establishes a physically feasible and practically scalable route to optical transistors operating at high speed and low power for integrated photonic circuits, with broad applications in all optical communication and computing.
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The resurgence of interest in cascaded second order nonlinearities[1,2] has resulted in several schemes for applying cascading in second-harmonic generating (SHG) crystals to optical transistor-like devices [3-7], Such devices allow a weak signal beam to impose a large amplitude modulation on a strong “pump” beam, through mixing in a χ(2) crystal. However, all of the devices reported to date require the pump and signal beams to be temporally coherent, as the process is strongly dependent on the phase between these two beams. There have been some suggestions[6,7] that type II phasematched SHG may remove phase sensitivity, but the devices proposed still require that the signal must be in phase with approximately half of the pump intensity. In this letter, we describe how one may properly exploit type II phase matching to produce a truly phase-insensitive all-optical transistor (AOT) based on second order nonlinearities.
We demonstrate and compare two phase-insensitive all-optical transistors (AOT's) based on frequency-degenerate quadratic three-wave interactions. In particular, we demonstrate gain using KTP in a type II geometry. Both AOT's exploit the phase insensitivity inherent to three-wave parametric processes when only two fields are input, providing amplification of a small signal at the operating frequency via the interaction with a second-harmonic wave. The first scheme is based on successive up- and down-conversion (i.e., cascading) while the second relies on parametric down-conversion. We obtain gains of 5 and 160 in the two configurations, respectively, with a significant background and output coherent to the pump in the first case, no background and coherence between output and signal in the second.