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SEMICONDUCTOR SYSTEM WITH TRANSITIONAL METAL IMPURITY FOR QUANTUM INFORMATION PROCESSING

William F. Koehl, David Daniel Awschalom

Published Mar 13, 2017• 0 citations
Publisher

Abstract

Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.

DOI
10.6082/9da67-5ha70

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Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
A method for preparing an entangled quantum state of an atomic ensemble is provided. The method includes loading each atom of the atomic ensemble into a respective optical trap; placing each atom of the atomic ensemble into a same first atomic quantum state by impingement of pump radiation; approaching the atoms of the atomic ensemble to within a dipole-dipole interaction length of each other; Rydberg-dressing the atomic ensemble; during the Rydberg-dressing operation, exciting the atomic ensemble with a Raman pulse tuned to stimulate a ground-state hyperfine transition from the first atomic quantum state to a second atomic quantum state; and separating the atoms of the atomic ensemble by more than a dipole-dipole interaction length.
Group IV color centers in diamond are among the most promising optically active electron-spin systems with strong optical transitions and long spin coherences. The orbital ground-state splitting of the center is particularly important to suppress the interaction with coherence-limiting phonons. A higher orbital ground-state splitting improves the spin-coherence properties and sets the upper limit for the operating temperature. Negatively charged silicon-vacancy centers have an ordinary ground-state splitting from spin-orbit coupling of only 48 G Hz , resulting in required temperatures below 1 K, which can only be achieved by dilution refrigerators. Here, we increase the orbital ground-state splitting by up to an order of magnitude by induced strain in a single-crystal diamond membrane. The characterized orbital ground-state splitting in highly strained regions could allow for electron-spin-coherence times of milliseconds at 1.5 K . We demonstrate cavity-assisted spectroscopy enabled by coupling the emitter ensemble with a selectable strain to the mode of a Fabry-Perot microcavity. Calculation of the absorption cross section yields σ abs ens ≈ 4.9 ⋅ 10 − 11 cm 2 . Furthermore, temperature-dependent lifetime measurements reveal a Purcell enhanced twofold reduction in emitter lifetime below 1 ns at 4 K .
Methods and apparatus of quantum information processing using quantum dots are provided. Electrons from a 2DEG are confined to the quantum dots and subjected to a magnetic field having a component directed parallel to the interface. Due to interfacial asymmetries, there is created an effective magnetic field that perturbs the energies of the spin states via an interfacial spin-orbit (SO) interaction. This SO interaction is utilized to controllably produce rotations of the electronic spin state, such as X-rotations of the electronic spin state in a double quantum dot (DQD) singlet-triplet (ST) qubit. The desired state rotations are controlled solely by the use of electrical pulses.