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Erbium Ions Integrated with Silicon Nanophotonic Structures: A Versatile Hybrid Quantum System

Gaia Da Prato

Published May 7, 2026• 0 citations
Publisher
DOI
10.4233/uuid:76b24181-8085-44e1-af85-694a3efaba00

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Abstract We report the design, fabrication and optical characterization of silicon nanophotonic waveguides on an erbium doped crystal. The silicon waveguide allows for efficient optical addressing of erbium ions embedded near the crystal surface. We employed the transfer printing method to assemble the heterogeneous photonic structure in a simple pick-and-place manner. We observed coupling of the emission from erbium ions into the waveguide in the telecommunication wavelength band. The developed methodology opens the way to functional hybrid quantum devices mediating between photons, electrons and phonons.
The hybrid of silicon and erbium-doped crystals provides a promising photonic platform for the advancement of quantum technologies, combining scalability, telecom compatibility, and complex quantum functionalities. However, the inherent high refractive index of silicon leads to optical field confinement within the silicon, limiting the number of optically active erbium ions and the achievable light absorption, which are essential for various quantum applications. To fully utilize the potential of erbium-doped crystals, we implemented bound states in the continuum within the hybrid silicon structures, which achieve substantial optical energy confinement within the lower-index crystal. Our structure, which is applicable to both transverse magnetic and transverse electric polarization modes, effectively increases the number of optically active erbium ions and demonstrates simultaneous minimal radiative losses and enhanced erbium absorption. Moreover, the core design principle is extensible to other low-refractive-index materials.