Spectroscopy and Application of Quantum Emitters for Quantum Technologies

Abstract

Sources of single photons are integral to a number of applications in the emerging field of quantum technologies. For any practical implementation of single-photon sources, a variety of different properties and an overall comprehensive characterization of the sources are required. Color centers in hBN and group IV color centers in diamond are promising candidate sources due to their favorable properties and rich internal level structure. Both of these candidates, however, also present some serious challenges. Although bright and spectrally narrow, defects in hBN suffer from emission instabilities. Furthermore, limited knowledge about their atomic composition leads to behaviour, which is often unpredictable. Meanwhile, Group IV centers generally exhibit low extraction efficiencies due to total internal reflection inside the high-index diamond host material. In this thesis, several large-scale series of experiments are conducted to investigate both types of emitters in a confocal fluorescence microscope at room temperature. The excitation characteristics of a large number of single-photon emitters in hBN from a narrow spectral window are investigated using a fully automated procedure. The results are compared to theoretical predictions for several carbon defects from the literature to gain further knowledge of the atomic nature of the underlying defects. Based on this approach, the CB, CN, CBVN, and CNVB centers are confidently ruled out as possible origins of the observed emission. Some uncertainty remains about the assignment of the carbon trimer C2CN as well as carbon-based donor-acceptor pairs. In a separate series of experiments, emission instabilities of hBN emitters from the same spectral region are studied. The detected fluctuations in brightness were conclusively attributed to spectral diffusion of the emission. Furthermore, optical stabilization of these effects via short-wavelength irradiation favors an explanation of the observed behavior via nearby charge carriers and the resulting Stark effect. Tin-vacancies, as representatives of group IV centers, are studied in a novel type of diamond waveguide structure for light collection enhancement. A center with sharp zero-phonon emission around 619 nm, a g(2)(0) value of 0.32, and simultaneous stable count rate of 3.4 Mcps was found. By restricting the collection to the zero-phonon line, g(2)(0) = 0.1 could be achieved. In a widespread characterization of the sample, it was found that most structures contain more than one negatively charged SnV center, which leaves an opportunity to improve the implantation parameters. In additional experiments on single tin-vacancy centers, a possible transition to a higher excited state as well as the charge-state transitions of the defects were probed. The results of these measurements contribute to the growing body of research on tin-vacancies and other group IV centers.