We report the first experimental study of the optical Stark effect in single semiconductor quantum dots (QD). For below band gap excitation, two-color pump-probe spectra show dispersive line shapes caused by a light-induced blueshift of the excitonic resonance. The line shape depends strongly on the excitation field strength and is determined by the pump-induced phase shift of the coherent QD polarization. Transient spectral oscillations can be understood as rotations of the QD polarization phase with negligible population change. Ultrafast control of the QD polarization is demonstrated.
Abstract Coherent control of optical effects are studied in a quantum dot molecule comprising triple quantum dots with the consideration of symmetric tunneling induced coupling. We have analyzed the origin of such coherence effects in terms of perturbative influence of the array of tunneling induced coherence terms associated with the semiclassical density matrix element relating to optically induced exciton generation. It has been shown that the coherence terms can significantly modify the absorptive and dispersive line shapes due to the change of condition of weak tunneling to moderate tunneling limited by the coherence dephasing effect. We have illustrated the evolution of Fano-like resonance controlling the absorptive line shapes under the conditions mentioned above. We have shown how, depending upon the variation of gate-biasing voltage, dispersion like features evolve in the absorptive case, while absorption-peak like features originate in case of dispersion. This is due to the appearance of non-linear Fano resonance inherent to this model. Our results highlight the appearance of a negative refractive index like pattern in the dispersive response of the line shape under such conditions.
We investigate the behavior of qubits consisting of three electron spins in double and triple quantum dots subject to external electric fields. Our model includes two independent bias parameters, $\ensuremath{\varepsilon}$ and ${\ensuremath{\varepsilon}}_{M}$, which both couple to external electromagnetic fields and can be controlled by gate voltages applied to the quantum dot structures. By varying these parameters, one can switch the qubit type by shifting the energies in the single quantum dots, thus changing the electron occupancy in each dot. Starting from the asymmetric resonant exchange qubit with a (2,0,1) and (1,0,2) charge admixture, one can smoothly cross over to the resonant exchange qubit with a detuned (1,1,1) charge configuration, and to the exchange-only qubit with the same charge configuration but equal energy levels down to the hybrid qubits with (1,2,0) and (0,2,1) charge configurations. Here,
(l,m,n) describes a configuration with
l electrons in the left dot,
m electrons in the center dot, and
n electrons in the right dot. We first focus on random electromagnetic field fluctuations, i.e., ``charge noise,'' at each quantum dot resulting in dephasing of the qubit, and we provide a complete map of the resulting dephasing time as a function of the bias parameters. We pay special attention to the so-called sweet spots and double sweet spots of the system, which are least susceptible to noise. In the second part, we investigate the coupling of the qubit system to the coherent quantized electromagnetic field in a superconducting strip-line cavity, and we also provide a complete map of the coupling strength as a function of the bias parameters. We analyze the asymmetric qubit-cavity coupling via $\ensuremath{\varepsilon}$ and the symmetric coupling via ${\ensuremath{\varepsilon}}_{M}$.