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Germanium-Vacancy Single Color Centers in Diamond

孝之 岩崎, Takayuki Iwasaki, 康佐 田原, Y. Miyamoto, 睦子 波多野, S. Kobayashi, T. Miyazaki, K. Tahara, K. Jahnke, Lachlan J. Rogers, Boris Naydenov, Fedor Jelezko, S. Yamasaki, S.Nagamachi, T. INUBUSHI, N. Mizuochi, Mutsuko Hatano, M. Hatano

Published Jan 1, 2015• 0 citations
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We report on the high-pressure synthesis of novel nano- and microcrystalline diamonds with germanium–vacancy (Ge–V) color centers emitting at 602 nm. The synthesis was carried out in non-metallic growth systems C–H–Ge and C–H–O–Ge enriched with germanium and carbon isotopes. We demonstrate germanium and carbon isotope shifts in the fine structure of the luminescence, which allows us to unambiguously associate the center with the germanium impurity entering into the diamond lattice. We show that there are two ground-state energy levels with the separation of 0.7 meV and two excited-state levels separated by 4.6 meV in the electronic structure of the center and suggest a split-vacancy structure of this center. High-intensity and narrow-line emission of high-pressure synthesized small diamonds with Ge–V centers makes them promising candidates for single-photon emitters.

Journal of Experimental and Theoretical Physics Letters•Dec 1, 2015•120 citations
Abstract Diamond resonators containing color‐centers are highly sought after for application in quantum technologies. Bottom‐up approaches are promising for the generation of single‐crystal diamond structures with purposely introduced color centers. Here the possibility of using a polycrystalline diamond to grow single‐crystal diamond structures by employing a pattern growth method is demonstrated. For, the possible mechanism of growing a single‐crystal structure with predefined shape and size from a polycrystalline substrate by controlling the growth condition is clarified. Then, by introducing germanium impurities during the growth, localized and enhanced emission from fabricated pyramid shaped single‐crystal diamonds containing germanium vacancy (GeV) color centers is demonstrated. Finally, linewidth of ∼500 MHz at 4 K from a single GeV center in the pyramid shaped diamonds is measured. The method is an important step toward fabrication of 3D structures for integrated diamond photonics.
We report on the high-pressure synthesis of novel nano- and microcrystalline diamonds with germanium–vacancy (Ge–V) color centers emitting at 602 nm. The synthesis was carried out in non-metallic growth systems C–H–Ge and C–H–O–Ge enriched with germanium and carbon isotopes. We demonstrate germanium and carbon isotope shifts in the fine structure of the luminescence, which allows us to unambiguously associate the center with the germanium impurity entering into the diamond lattice. We show that there are two ground-state energy levels with the separation of 0.7 meV and two excited-state levels separated by 4.6 meV in the electronic structure of the center and suggest a split-vacancy structure of this center. High-intensity and narrow-line emission of high-pressure synthesized small diamonds with Ge–V centers makes them promising candidates for single-photon emitters.