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Ultrafast quantum-path interferometry of photo-absorption involving excitons in a GaAs multiple-quantum-well structure

Yuya Furusho, Yuya Furusyo, 涼子 八木, Ryoko Yagi, 匡紀 須田, Masaki Suda, 司 丸橋, Tsukasa Maruhashi, 一旗 髙木, Itsuki Takagi, 洋輔 萱沼, Yōsuke Kayanuma, 南不二雄, F. Minami, 一隆 中村, Kazutaka G. Nakamura

Published Dec 1, 2022• 0 citations
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Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.