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Spectrally Reconfigurable Quantum Emitters Enabled by Optimized Fast Modulation

Daniil M. Lukin, Alexander D. White, Rahul Trivedi, Melissa A. Guidry, Naoya Morioka, Charles Babin, Öney O. Soykal, Ul-Hassan Jawad, Nguyên Tiên Són, Takeshi Ohshima, Praful Krishna Vasireddy, Mamdouh H. Nasr, Shuo Sun, W. MacLean Jean-Philippe, Constantin Dory, Emilio Alessandro Nanni, Jörg Wrachtrup, Florian Kaiser, Jelena Vuckovic A

Published Sep 1, 2020• 0 citations
OpenAlex

Abstract

The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scatteringmatrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

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Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

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Abstract The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

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Electronic and Photonic Integration of Single Quantum Emitters in 2D Materials

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Single-photon sources that are bright, pure, and interference-ready are essential for quantum communication and photonic quantum information processing, but many solid-state platforms still rely on bulky optical excitation, careful alignment, and post-selection to achieve useful linewidth, stability, and brightness. Scalable quantum photonics instead requires turnkey quantum-light engines that can be triggered on demand, stabilized against environmental noise, and efficiently interfaced with fibers or photonic circuits. This review surveys recent progress in electronic and photonic integration of single quantum emitters in two-dimensional materials, focusing on localized excitonic emitters in transition metal dichalcogenides and defect-based color centers in hexagonal boron nitride. On the electronic side, we discuss electrical injection, fast modulation, electrostatic stabilization, and Stark tunability as routes to suppress blinking, spectral wandering, and charge-noise-induced broadening. On the photonic side, we review waveguide and resonator platforms that funnel emission into well-defined optical modes and, in some cases, enhance radiative rates through the Purcell effect. We connect these integration strategies to key source metrics, including single-photon purity, brightness, spectral stability, and photon indistinguishability. We conclude that the next stage of progress will depend on co-designed electronic and photonic architectures that jointly optimize on-demand operation, stabilization, tunability, and packaging-compatible optical interfacing.

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Resonance fluorescence of two-level quantum systems has emerged as a powerful tool in quantum information processing. Extension of this approach to higher-level systems provides new opportunities for quantum optics applications. Here we introduce an all-optical tuning functionality into a well-established resonance fluorescence coherent driving scheme. We accomplish this by resonant excitation of a three-level ladder system with two laser fields utilizing Autler-Townes and ac Stark effects. We propose theoretically and demonstrate experimentally the feasibility of this approach toward all-optical spectral tuning of quantum-dot-based single-photon sources and investigate photon indistinguishability and purity levels. Our tuning technique allows for fast optical control of the quantum emitter spectrum which paves the way toward temporal and spectral shaping of the single photons, formation of topological Floquet states, or generation of high-dimensional frequency-encoded quantum states of light.

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Spectral stability of cavity-enhanced single-photon emitters in silicon

Johannes Früh, Fabian Salamon, Andreas Gritsch +2 more

The unrivaled maturity of its nanofabrication makes silicon a promising hardware platform for quantum information processing. To this end, efficient single-photon sources and spin-photon interfaces have been implemented by integrating color centers or erbium dopants into nanophotonic resonators. However, the optical emission frequencies in this approach are subject to temporal fluctuations on both long and short timescales, which hinders the development of quantum applications. Here, we investigate this limitation and demonstrate that it can be alleviated by integrating the emitters into Fabry-Perot instead of nanophotonic resonators. Their larger optical mode volume enables both increasing the distance to crystal surfaces and operating at a lower dopant concentration, which reduces implantation-induced crystal damage and interactions between emitters. As a result, we observe a fivefold reduction of the spectral diffusion linewidth down to 4.0(2) MHz. Calculations and experimental investigations of isotopically purified 28-Si crystals suggest that the remaining spectral instability is caused by laser-induced electric-field fluctuations. In direct comparison with a nanophotonic device, the instability is significantly reduced at the same intracavity power, enabling a tenfold increase of the optical coherence time up to 20(1) microseconds. These findings represent a key step towards spectrally stable spin-photon interfaces in silicon and their potential applications in quantum networking and distributed quantum information processing.

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Spectral Diffusion Mitigation with a Laser Pulse Sequence

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The optical spectrum of a quantum system is jointly determined by the properties of the emitter and the driving field. All-optical spectral control can hence be a promising method to engineer the properties of single photon emitters for quantum technological applications. It was proposed that driving a two-level system with a periodic sequence of optical pi-pulses during the excited state lifetime shifts the emission and absorption maximum to an arbitrarily detuned pulse carrier frequency, enabling the mitigation of spectral diffusion in noisy emitters. In this article, we report on the first experimental observation of this effect. We implement the protocol on a solid-state emitter and reduce its inhomogeneously broadened optical linewidth close to the lifetime limit. By detuning the excitation laser, we are able to concentrate approximately half of the absorption to a freely selectable target frequency. Our approach is solely based on properties of coherently evolving quantum systems, rendering it applicable to a wide range of individual and ensembles of quantum emitters.

quant-pharXiv:2604.21659•Apr 24, 2026•0 citations

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Ruffin E. Evans, Mihir K. Bhaskar, Денис Дмитриевич Сукачев +10 more

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically mediated interactions. Such controlled interactions will be crucial in developing cavity-mediated quantum gates between spin qubits and for realizing scalable quantum network nodes.

arXiv:1807.04265•Science•Sep 20, 2018•311 citations
The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scatteringmatrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.
Abstract The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.
Single-photon sources that are bright, pure, and interference-ready are essential for quantum communication and photonic quantum information processing, but many solid-state platforms still rely on bulky optical excitation, careful alignment, and post-selection to achieve useful linewidth, stability, and brightness. Scalable quantum photonics instead requires turnkey quantum-light engines that can be triggered on demand, stabilized against environmental noise, and efficiently interfaced with fibers or photonic circuits. This review surveys recent progress in electronic and photonic integration of single quantum emitters in two-dimensional materials, focusing on localized excitonic emitters in transition metal dichalcogenides and defect-based color centers in hexagonal boron nitride. On the electronic side, we discuss electrical injection, fast modulation, electrostatic stabilization, and Stark tunability as routes to suppress blinking, spectral wandering, and charge-noise-induced broadening. On the photonic side, we review waveguide and resonator platforms that funnel emission into well-defined optical modes and, in some cases, enhance radiative rates through the Purcell effect. We connect these integration strategies to key source metrics, including single-photon purity, brightness, spectral stability, and photon indistinguishability. We conclude that the next stage of progress will depend on co-designed electronic and photonic architectures that jointly optimize on-demand operation, stabilization, tunability, and packaging-compatible optical interfacing.
Resonance fluorescence of two-level quantum systems has emerged as a powerful tool in quantum information processing. Extension of this approach to higher-level systems provides new opportunities for quantum optics applications. Here we introduce an all-optical tuning functionality into a well-established resonance fluorescence coherent driving scheme. We accomplish this by resonant excitation of a three-level ladder system with two laser fields utilizing Autler-Townes and ac Stark effects. We propose theoretically and demonstrate experimentally the feasibility of this approach toward all-optical spectral tuning of quantum-dot-based single-photon sources and investigate photon indistinguishability and purity levels. Our tuning technique allows for fast optical control of the quantum emitter spectrum which paves the way toward temporal and spectral shaping of the single photons, formation of topological Floquet states, or generation of high-dimensional frequency-encoded quantum states of light.
The unrivaled maturity of its nanofabrication makes silicon a promising hardware platform for quantum information processing. To this end, efficient single-photon sources and spin-photon interfaces have been implemented by integrating color centers or erbium dopants into nanophotonic resonators. However, the optical emission frequencies in this approach are subject to temporal fluctuations on both long and short timescales, which hinders the development of quantum applications. Here, we investigate this limitation and demonstrate that it can be alleviated by integrating the emitters into Fabry-Perot instead of nanophotonic resonators. Their larger optical mode volume enables both increasing the distance to crystal surfaces and operating at a lower dopant concentration, which reduces implantation-induced crystal damage and interactions between emitters. As a result, we observe a fivefold reduction of the spectral diffusion linewidth down to 4.0(2) MHz. Calculations and experimental investigations of isotopically purified 28-Si crystals suggest that the remaining spectral instability is caused by laser-induced electric-field fluctuations. In direct comparison with a nanophotonic device, the instability is significantly reduced at the same intracavity power, enabling a tenfold increase of the optical coherence time up to 20(1) microseconds. These findings represent a key step towards spectrally stable spin-photon interfaces in silicon and their potential applications in quantum networking and distributed quantum information processing.
The optical spectrum of a quantum system is jointly determined by the properties of the emitter and the driving field. All-optical spectral control can hence be a promising method to engineer the properties of single photon emitters for quantum technological applications. It was proposed that driving a two-level system with a periodic sequence of optical pi-pulses during the excited state lifetime shifts the emission and absorption maximum to an arbitrarily detuned pulse carrier frequency, enabling the mitigation of spectral diffusion in noisy emitters. In this article, we report on the first experimental observation of this effect. We implement the protocol on a solid-state emitter and reduce its inhomogeneously broadened optical linewidth close to the lifetime limit. By detuning the excitation laser, we are able to concentrate approximately half of the absorption to a freely selectable target frequency. Our approach is solely based on properties of coherently evolving quantum systems, rendering it applicable to a wide range of individual and ensembles of quantum emitters.
Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically mediated interactions. Such controlled interactions will be crucial in developing cavity-mediated quantum gates between spin qubits and for realizing scalable quantum network nodes.