Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

APL Quantum

Integrated multi-wavelength photonic routing architectures for scalable trapped ion quantum devices

Alto Osada, Koichiro Miyanishi

Published Jan 2, 2026• 0 citations
Publisher

Abstract

Recent advances in quantum technologies rely on precise control and integration of quantum objects, and technological breakthroughs are anticipated for further scaling up to realize practical applications. Trapped-ion quantum technology is a promising candidate to realize them, while its scalability depends on the development of intra-node scaling up, reproducibility of quantum nodes, and photonic interconnection among them. Utilization of integrated photonics instead of free-space optics is a crucial step toward mass production of trapped-ion quantum nodes and manifests itself as useful for laser delivery for various quantum operations and photon detection. However, the whole architecture of the scalable photonic circuits for them is left unexplored. In this work, we discuss photonic routing architectures for trapped-ion quantum devices, in which lasers of multiple wavelengths are delivered to multiple trapping zones within a single chip. We analyze two methods of configuring nanophotonic waveguides and compare them in terms of loss of total laser power. This work opens up a new landscape of photonic architecture for trapped-ion quantum technologies, which broadens the scope of integrated photonics for quantum technologies.

DOI
10.1063/5.0300216

Related papers

Integrated Multi-Wavelength Photonic Architectures for Future Scalable Trapped Ion Quantum Devices

Alto Osada, Koichiro Miyanishi

Recent advances of quantum technologies rely on precise control and integration of quantum objects, and technological breakthrough is anticipated for further scaling up to realize practical applications. Trapped-ion quantum technology is a promising candidates to realize them, while its scalability depends on the development of intra-node scaling up, reproducibility of quantum nodes and photonic interconnection among them. Utilization of integrated photonics instead of free-space optics is a crucial step toward mass production of trapped-ion quantum nodes and manifests itself as useful for laser delivery for various quantum operations and photon detection. However, whole architecture of the scalable photonic circuits for them is left unexplored. In this work, we discuss photonic architectures for trapped-ion quantum devices, in which lasers of multiple wavelengths are delivered to multiple trapping zones within a single chip. We analyze two methods of configuring nanophotonic waveguides and compare them in terms of loss of total laser power. This work opens up a new landscape of photonic architecture for various applications not only to quantum ones such as trapped-ion devices but also to classical photonics, e.g. optoelectronic devices and biochemical sensing.

arXiv:2505.07445•May 12, 2025•0 citations

Integrated photonics for scalable quantum systems: from UV nanophotonics to trapped-ion architectures

Rangana Banerjee Chaudhuri, Carl-Frederik Grimpe, Fatemeh Salahshoori +5 more

Photonic integrated circuits (PICs) offer compact and scalable solutions for trapped-ion quantum technologies. This work demonstrates photonic platforms that promise the potential integration of photonic components for light delivery and control across ultraviolet (UV) to near-infrared (NIR) wavelengths. Passive waveguides and beam-shaping structures provide precise and stable optical addressing of ions, while active elements such as modulators and switches enable dynamic, on-chip control for quantum operations. Materials like aluminum oxide (Al2O3) and aluminum nitride (AlN) are evaluated to illustrate how functionality can be tailored to spectral needs. These integrated photonic systems reduce reliance on bulky free-space optics, improve alignment stability, and support future development of compact quantum sensors, atomic clocks, and scalable quantum processors.

Integrated Optics: Devices, Materials, and Technologies•Mar 4, 2026•0 citations

A broadband, individually addressing two- and three-dimensional photonic integrated circuit for trapped-ion qubit control

Daniel Klawson, Yiyang Zhi, Bingran You +21 more

Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from $λ$ = 405 - 880 nm with -27 dB average intensity crosstalk at $5\,μ\mathrm{m}$ pitch. We trap $^{40}\mathrm{Ca}^{+}$ and $^{138}\mathrm{Ba}^{+}$ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.

quant-pharXiv:2607.25062•Jul 29, 2026•0 citations

Ion trap quantum computing using integrated photonics

Karan K. Mehta, Alfredo Ricci Vásquez, Carmelo Mordini +6 more

Atomic ions controlled by laser light are among the leading candidates for large scale quantum computing. However operational systems today require vast scaling to reach levels capable of useful computational tasks. The integration of light delivery will be an essential component of this for the trapped-ion approach. I will describe results in which the use of photonics integrated into ion trap chips has allowed us to perform high fidelity two-qubit gates, which are an essential building block for quantum computers. These systems have now been extended to the operation of multiple trap zones, and the creation of novel optical fields for ion trap control while a new generation of chips allowing integration of all required wavelengths as well as optimised light delivery offers further enhancements in performance and scaling.

Integrated Optics: Devices, Materials, and Technologies•Mar 17, 2023•1 citation

Scaling Up Trapped-Ion Quantum Processors with Integrated Photonics

Molly P. Andersen, Bryan A. DeBono, Sara Campbell +16 more

Quantinuum has deployed trapped-ion quantum computers based on a quantum charge-coupled (QCCD) architecture exhibiting high-fidelity operations, mid-circuit measurements, and full connectivity with record performance. Quantinuum recently released its accelerated Roadmap outlining plans to reach thousands of physical qubits while further reducing logical qubit error rates in commercial systems by 2029 [1]. Longerterm scaling of the QCCD device architecture will be enabled by replacing bulk free-space optics with integrated photonics for improved light delivery and detection. To this end, Quantinuum is developing integrated photonics technologies at the visible and ultraviolet wavelengths required for future large-scale trapped-ion quantum computers. This poster presents recent developments in materials (waveguiding materials, transparent conductive materials), visible and ultraviolet integrated photonics components for light routing and control, and the various paths to their implementation. These developments are expected to enable scaling towards larger qubit counts while reducing the physical size of the optical control systems.

IEEE International Conference on Quantum Computing and Engineering (QCE)•Aug 30, 2025•0 citations

Benchmarking dual-polarization silicon nitride photonic integrated circuits for trapped-ion quantum technologies

Carl-Frederik Grimpe, Anastasiia Lüßmann-Sorokina, Guochun Du +10 more

Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.

•Jun 26, 2026•0 citations
Recent advances in quantum technologies rely on precise control and integration of quantum objects, and technological breakthroughs are anticipated for further scaling up to realize practical applications. Trapped-ion quantum technology is a promising candidate to realize them, while its scalability depends on the development of intra-node scaling up, reproducibility of quantum nodes, and photonic interconnection among them. Utilization of integrated photonics instead of free-space optics is a crucial step toward mass production of trapped-ion quantum nodes and manifests itself as useful for laser delivery for various quantum operations and photon detection. However, the whole architecture of the scalable photonic circuits for them is left unexplored. In this work, we discuss photonic routing architectures for trapped-ion quantum devices, in which lasers of multiple wavelengths are delivered to multiple trapping zones within a single chip. We analyze two methods of configuring nanophotonic waveguides and compare them in terms of loss of total laser power. This work opens up a new landscape of photonic architecture for trapped-ion quantum technologies, which broadens the scope of integrated photonics for quantum technologies.
Recent advances of quantum technologies rely on precise control and integration of quantum objects, and technological breakthrough is anticipated for further scaling up to realize practical applications. Trapped-ion quantum technology is a promising candidates to realize them, while its scalability depends on the development of intra-node scaling up, reproducibility of quantum nodes and photonic interconnection among them. Utilization of integrated photonics instead of free-space optics is a crucial step toward mass production of trapped-ion quantum nodes and manifests itself as useful for laser delivery for various quantum operations and photon detection. However, whole architecture of the scalable photonic circuits for them is left unexplored. In this work, we discuss photonic architectures for trapped-ion quantum devices, in which lasers of multiple wavelengths are delivered to multiple trapping zones within a single chip. We analyze two methods of configuring nanophotonic waveguides and compare them in terms of loss of total laser power. This work opens up a new landscape of photonic architecture for various applications not only to quantum ones such as trapped-ion devices but also to classical photonics, e.g. optoelectronic devices and biochemical sensing.
Photonic integrated circuits (PICs) offer compact and scalable solutions for trapped-ion quantum technologies. This work demonstrates photonic platforms that promise the potential integration of photonic components for light delivery and control across ultraviolet (UV) to near-infrared (NIR) wavelengths. Passive waveguides and beam-shaping structures provide precise and stable optical addressing of ions, while active elements such as modulators and switches enable dynamic, on-chip control for quantum operations. Materials like aluminum oxide (Al2O3) and aluminum nitride (AlN) are evaluated to illustrate how functionality can be tailored to spectral needs. These integrated photonic systems reduce reliance on bulky free-space optics, improve alignment stability, and support future development of compact quantum sensors, atomic clocks, and scalable quantum processors.
Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from λλλ = 405 - 880 nm with -27 dB average intensity crosstalk at 5 μm5\,μ\mathrm{m}5μm pitch. We trap 40Ca+^{40}\mathrm{Ca}^{+}40Ca+ and 138Ba+^{138}\mathrm{Ba}^{+}138Ba+ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.
Atomic ions controlled by laser light are among the leading candidates for large scale quantum computing. However operational systems today require vast scaling to reach levels capable of useful computational tasks. The integration of light delivery will be an essential component of this for the trapped-ion approach. I will describe results in which the use of photonics integrated into ion trap chips has allowed us to perform high fidelity two-qubit gates, which are an essential building block for quantum computers. These systems have now been extended to the operation of multiple trap zones, and the creation of novel optical fields for ion trap control while a new generation of chips allowing integration of all required wavelengths as well as optimised light delivery offers further enhancements in performance and scaling.
Quantinuum has deployed trapped-ion quantum computers based on a quantum charge-coupled (QCCD) architecture exhibiting high-fidelity operations, mid-circuit measurements, and full connectivity with record performance. Quantinuum recently released its accelerated Roadmap outlining plans to reach thousands of physical qubits while further reducing logical qubit error rates in commercial systems by 2029 [1]. Longerterm scaling of the QCCD device architecture will be enabled by replacing bulk free-space optics with integrated photonics for improved light delivery and detection. To this end, Quantinuum is developing integrated photonics technologies at the visible and ultraviolet wavelengths required for future large-scale trapped-ion quantum computers. This poster presents recent developments in materials (waveguiding materials, transparent conductive materials), visible and ultraviolet integrated photonics components for light routing and control, and the various paths to their implementation. These developments are expected to enable scaling towards larger qubit counts while reducing the physical size of the optical control systems.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.