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Rare-Earth Ions in Niobium-based Devices as a Quantum Memory Magneto-Optical Effects on Room Temperature Electrical Transport

Dinh, Vincent, Liu, Brad, Rees, Dave, Simonsen, Kenneth, Osama M. Nayfeh

Published Jan 1, 2016• 0 citations
Publisher
DOI
10.13140/rg.2.2.23703.84649

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Rare-Earth Ions in Niobium-Based Devices as a Quantum Memory: Magneto-Optical Effects on Room Temperature Electrical Transport

Osama M. Nayfeh, Vincent Dinh, Brad Liu +3 more

Abstract : Rare-earth ions are useful for the implementation of quantum memory. In particular, the energy levels and magnetic/spin properties of select ions may enable storage of quantum states. Also, the optical activity may enable optical read-out techniques and optical transmission of qubit states. In addition, the energy levels of ions can be used for designing superconducting qubits where the ionic configuration tunes the Hamiltonian for quantum computing. In the more near term, ions embedded in superconductor heterostructure can be used to implement cryogenic memory for superconducting digital computing. Our concept involves embedding rare-earth ions in superconductor devices to provide a low dissipation environment and access to the systems Hamiltonian. In this report we show results and success in integrating rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process and confirm the concentration of the neodymium in niobium by energy dispersive X-ray (EDX) spectroscopy in a scanning electron microscope (SEM). We study the effect of optical illumination and magnetic stimulus on the transport of the devices at room temperature, as it is important to understand the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect on the response. We also find that the selectivity in the optical effect when using a broadband halogen lamp in comparison to a light emitting diode (LED) with selectivity in the excitation wavelength, reinforces the role of the magnetic and optically active Nd rare-earth ions on the device response.

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Rare-Earth Quantum Device Project

Sato Shinichiro

Rare-Earth Quantum Device Project aims to develop quantum devices based on gallium nitride (GaN), which has high quality and advanced microfabrication and device technologies, and rare-earth ions (RE3+), which have excellent characteristics as qubits and single photon sources. RE:GaN quantum devices have the potential to realize "electrically controlled single photon sources (SPSs) in the optical communication wavelength band at room temperature," "on-chip quantum entangled light sources," and "real-time diagnostics inside GaN devices by quantum sensing," which have not been achieved to date. Currently, our project studies ion implantation and post thermal annealing for high efficiency optical activation of implanted RE ions in GaN, local atomic structure of implanted RE ions, development of quantum sensing using RE ions in GaN, and enhancement of spontaneous emission of implanted RE ions in GaN by coupling to photonic crystal.

•Oct 1, 2024•0 citations

Room-temperature persistent spectral hole burning of Sm/sup 2+/ in silicate-based fiber

Kentarou Nouchi, Tsuneo Mitsuyu, Kimihiko Hirao +2 more

Summary form only given. Persistent spectral hole burning (PSHB) of rare-earth-doped inorganic materials has attracted much attention in view of application to high-density optical memories. In particular, it seems that the glass materials are advantageous for application in wavelength-selective optical devices, as well as the memory devices, because of their large inhomogeneous linewidth. The wavelength-selective devices are key components in the wavelength-division multiplexing system, which is important for the next-generation optical communication technology. The problem for practical application lies in the fact that PSHB of rare-earth ions in glasses is usually observed only at temperature below 20 K. However, room-temperature PSHB has been observed recently for Sm/sup 2+/-doped crystals and glasses.

Conference on Lasers and Electro-Optics•Jan 20, 2003•0 citations

Towards quantum memory with rare-earth-ions in crystals

Haoquan Fan, Elizabeth A. Goldschmidt

Bulletin of the American Physical Society•Jun 6, 2017•0 citations
Abstract : Rare-earth ions are useful for the implementation of quantum memory. In particular, the energy levels and magnetic/spin properties of select ions may enable storage of quantum states. Also, the optical activity may enable optical read-out techniques and optical transmission of qubit states. In addition, the energy levels of ions can be used for designing superconducting qubits where the ionic configuration tunes the Hamiltonian for quantum computing. In the more near term, ions embedded in superconductor heterostructure can be used to implement cryogenic memory for superconducting digital computing. Our concept involves embedding rare-earth ions in superconductor devices to provide a low dissipation environment and access to the systems Hamiltonian. In this report we show results and success in integrating rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process and confirm the concentration of the neodymium in niobium by energy dispersive X-ray (EDX) spectroscopy in a scanning electron microscope (SEM). We study the effect of optical illumination and magnetic stimulus on the transport of the devices at room temperature, as it is important to understand the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect on the response. We also find that the selectivity in the optical effect when using a broadband halogen lamp in comparison to a light emitting diode (LED) with selectivity in the excitation wavelength, reinforces the role of the magnetic and optically active Nd rare-earth ions on the device response.
Rare-Earth Quantum Device Project aims to develop quantum devices based on gallium nitride (GaN), which has high quality and advanced microfabrication and device technologies, and rare-earth ions (RE3+), which have excellent characteristics as qubits and single photon sources. RE:GaN quantum devices have the potential to realize "electrically controlled single photon sources (SPSs) in the optical communication wavelength band at room temperature," "on-chip quantum entangled light sources," and "real-time diagnostics inside GaN devices by quantum sensing," which have not been achieved to date. Currently, our project studies ion implantation and post thermal annealing for high efficiency optical activation of implanted RE ions in GaN, local atomic structure of implanted RE ions, development of quantum sensing using RE ions in GaN, and enhancement of spontaneous emission of implanted RE ions in GaN by coupling to photonic crystal.
Summary form only given. Persistent spectral hole burning (PSHB) of rare-earth-doped inorganic materials has attracted much attention in view of application to high-density optical memories. In particular, it seems that the glass materials are advantageous for application in wavelength-selective optical devices, as well as the memory devices, because of their large inhomogeneous linewidth. The wavelength-selective devices are key components in the wavelength-division multiplexing system, which is important for the next-generation optical communication technology. The problem for practical application lies in the fact that PSHB of rare-earth ions in glasses is usually observed only at temperature below 20 K. However, room-temperature PSHB has been observed recently for Sm/sup 2+/-doped crystals and glasses.